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    SI4505DY Search Results

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    SI4505DY Price and Stock

    Vishay Siliconix SI4505DY-T1-E3

    MOSFET N/P-CH 30V/8V 6A 8SOIC
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    DigiKey SI4505DY-T1-E3 Reel
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    Vishay Siliconix SI4505DY-T1-GE3

    MOSFET N/P-CH 30V/8V 6A 8SOIC
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    DigiKey SI4505DY-T1-GE3 Reel
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    Vishay Intertechnologies SI4505DY-T1-GE3

    MOSFETs 30/8.0V 7.8/5.0A 18/42mohm @ 10/4.5V
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    Mouser Electronics SI4505DY-T1-GE3
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    Vishay Siliconix SI4505DY-T1

    MOSFET Transistor, Pair, Complementary, SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4505DY-T1 500
    • 1 $1.875
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    • 100 $1.875
    • 1000 $0.9375
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    Vishay Intertechnologies SI4505DY-T1

    MOSFET Transistor, Pair, Complementary, SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4505DY-T1 80
    • 1 $3
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    • 100 $1.65
    • 1000 $1.65
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    SI4505DY Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4505DY Vishay Intertechnology N- and P-Channel MOSFET Original PDF
    SI4505DY Vishay Siliconix N- and P-Channel MOSFET Original PDF
    Si4505DY SPICE Device Model Vishay N- and P-Channel MOSFET Original PDF
    SI4505DY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 6A 8-SOIC Original PDF
    SI4505DY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 6A 8-SOIC Original PDF

    SI4505DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S-20829

    Abstract: No abstract text available
    Text: Si4505DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 7.8 0.027 @ VGS = 4.5 V 6.4 0.042 @ VGS = –4.5 V –5.0 0.060 @ VGS = –2.5 V –4.0 D TrenchFETr Power MOSFET


    Original     		PDF Si4505DY S-20829--Rev. 17-Jun-02 S-20829

    Untitled

    Abstract: No abstract text available
    Text: Si4505DY Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A)


    Original     		PDF Si4505DY 2002/95/EC Si4505DY-T1-E3 Si4505DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4505DY Vishay Siliconix New Product N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel P-Channel 30 -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V 7.8 0.027 at VGS = 4.5 V 6.4 0.042 at VGS = - 4.5 V - 5.0 0.060 at VGS = - 2.5 V - 4.0 • TrenchFET Power MOSFET


    Original     		PDF Si4505DY Si4505DY-T1 Si4505DY-T1-E3 18-Jul-08

    Si4505DY

    Abstract: 20AUG02
    Text: SPICE Device Model Si4505DY Vishay Siliconix N- and P-Channel MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4505DY 0-to-10V 20-Aug-02 20AUG02

    Si4505DY

    Abstract: Si4505DY-T1 Si4505DY-T1-E3
    Text: Si4505DY Vishay Siliconix New Product N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel P-Channel 30 -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V 7.8 0.027 at VGS = 4.5 V 6.4 0.042 at VGS = - 4.5 V - 5.0 0.060 at VGS = - 2.5 V - 4.0 • TrenchFET Power MOSFET


    Original     		PDF Si4505DY Si4505DY-T1 Si4505DY-T1-E3 S-61005-Rev. 12-Jun-06

    Untitled

    Abstract: No abstract text available
    Text: Si4505DY Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A)


    Original     		PDF Si4505DY 2002/95/EC Si4505DY-T1-E3 Si4505DY-T1-GE3 25electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    74684

    Abstract: 4836 AN609 Si4505DY 121-872 62455
    Text: Si4505DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4505DY AN609 09-May-07 74684 4836 121-872 62455

    Si4505DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4505DY Vishay Siliconix N- and P-Channel MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4505DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4505DY Vishay Siliconix New Product N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel P-Channel 30 -8 rDS(on) (Ω) ID (A) 0.018 at VGS = 10 V 7.8 0.027 at VGS = 4.5 V 6.4 0.042 at VGS = - 4.5 V - 5.0 0.060 at VGS = - 2.5 V - 4.0 • TrenchFET Power MOSFET


    Original     		PDF Si4505DY Si4505DY-T1 Si4505DY-T1-E3 08-Apr-05

    Si4505DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4505DY Vishay Siliconix N- and P-Channel MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4505DY 15-Oct-05

    Si4505DY

    Abstract: Si4505DY-T1-E3
    Text: Si4505DY Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel -8 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A)


    Original     		PDF Si4505DY 2002/95/EC Si4505DY-T1-E3 Si4505DY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4505DY New Product Vishay Siliconix N- and P-Channel MOSFET FEATURES PRODUCT SUMMARY VDS V N-Channel 30 P-Channel –8 rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 7.8 0.027 @ VGS = 4.5 V 6.4 0.042 @ VGS = –4.5 V –5.0 0.060 @ VGS = –2.5 V –4.0 D TrenchFETr Power MOSFET


    Original     		PDF Si4505DY 08-Apr-05