Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one
|
Original
|
PDF
|
SSM6E03TU
|
Untitled
Abstract: No abstract text available
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
|
Original
|
PDF
|
SSM6E01TU
|
SSM6E01TU
Abstract: HIGH POWER MOSFET TOSHIBA
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
|
Original
|
PDF
|
SSM6E01TU
SSM6E01TU
HIGH POWER MOSFET TOSHIBA
|
CMLDM7005
Abstract: Power MOSFET p-Channel n-channel dual CMLDM8005 TR
Text: Product Brief CMLDM7005 Dual, N-Channel CMLDM8005 (Dual, P-Channel) CMLDM7585 (N & P-Channel) SOT-563 20V, 650mA Dual, Complementary MOSFETs in the miniature SOT-563 package N-Channel P-Channel N & P-Channel Typical Electrical Characteristics Central Semiconductor’s CMLDM7005 (Dual, N-Channel),
|
Original
|
PDF
|
CMLDM7005
CMLDM8005
CMLDM7585
650mA
OT-563
OT-563
CMLDM7005
Power MOSFET p-Channel n-channel dual
CMLDM8005 TR
|
Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
|
Original
|
PDF
|
SiA519EDJ
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
KTA 3-25
Abstract: SSM6E01TU SSM6E
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. · Low power dissipation due to P-channel MOSFET that features low
|
Original
|
PDF
|
SSM6E01TU
KTA 3-25
SSM6E01TU
SSM6E
|
Untitled
Abstract: No abstract text available
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
|
Original
|
PDF
|
SSM6E01TU
|
Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
|
Original
|
PDF
|
SiA519EDJ
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
|
Original
|
PDF
|
SiA519EDJ
SC-70-6
SiA533EDJ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SSM6E01TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type U-MOS II + N-Channel MOS Type (Planer) SSM6E01TU Load Switch Applications Unit: mm • P-channel MOSFET and N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
|
Original
|
PDF
|
SSM6E01TU
|
RTJC
Abstract: No abstract text available
Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s
|
Original
|
PDF
|
FDD8424H
FDD8424H
RTJC
|
FDMJ1032C
Abstract: marking 032 SC-75 Dual N & P-Channel
Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement
|
Original
|
PDF
|
FDMJ1032C
FDMJ1032C
marking 032
SC-75
Dual N & P-Channel
|
Untitled
Abstract: No abstract text available
Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s
|
Original
|
PDF
|
FDD8424H
|
Untitled
Abstract: No abstract text available
Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's
|
Original
|
PDF
|
FDS8958B
com/dwg/M0/M08A
|
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V
Abstract: No abstract text available
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
|
Original
|
PDF
|
FDS8858CZ
FDS8858CZ
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V
|
FDD3510H
Abstract: No abstract text available
Text: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s
|
Original
|
PDF
|
FDD3510H
FDD3510H
|
FDS8858CZ
Abstract: fds8858
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
|
Original
|
PDF
|
FDS8858CZ
FDS8858CZ
fds8858
|
FDS8858CZ
Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
|
Original
|
PDF
|
FDS8858CZ
FDS8858CZ
fds8858
DUAL N-CHANNEL POWERTRENCH MOSFET
q2180
|
Untitled
Abstract: No abstract text available
Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • 1.8 V drive P-channel MOSFET and 1.5 V drive N-channel MOSFET incorporated into one package. • Low power dissipation due to P-channel MOSFET that features low
|
Original
|
PDF
|
SSM6E03TU
|
Untitled
Abstract: No abstract text available
Text: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s
|
Original
|
PDF
|
FDD3510H
FDD3510H
|
Untitled
Abstract: No abstract text available
Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's
|
Original
|
PDF
|
FDS8958B
FDS8958B
|
FDS8858
Abstract: No abstract text available
Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s
|
Original
|
PDF
|
FDS8858CZ
FDS8858
|
p12p10
Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Text: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851
|
OCR Scan
|
PDF
|
2N6804
2N6849
2N6851
2N6895
2N6896
2N6897
2N6898
IRF9130,
IRF9131,
IRF9132,
p12p10
IRF9530* p-channel power MOSFET
Power MOSFETs
Field-Effect Transistors
IRFP9140/P9141
irf9640 mosfet
IRF9530 P-channel power
p-channel
irfp9240
|
100V 60A Mosfet
Abstract: 50V 60A MOSFET P-Channel 200V MOSFET MOSFET ESD Rated P-Channel 451 MOSFET Pchannel 15a 50v p-channel mosfet P-Channel 60V MOSFET P-Channel Enhancement-Mode
Text: POWER MOSFETs 4 P-CHANNEL POWER MOSFETs PAGE P-CHANNEL POWER MOSFET DATA SHEETS IRFU9110, IRFR9110 3.1A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s . 4-3 IRFU9120, IRFR9120 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power M O S F E T s .
|
OCR Scan
|
PDF
|
IRFU9110,
IRFR9110
IRFU9120,
IRFR9120
IRFR9220,
IRFU9220
RFD8P06E,
RFD8P06ESM,
RFP8P06E
RFD15P05,
100V 60A Mosfet
50V 60A MOSFET
P-Channel 200V MOSFET
MOSFET ESD Rated
P-Channel
451 MOSFET
Pchannel
15a 50v p-channel mosfet
P-Channel 60V MOSFET
P-Channel Enhancement-Mode
|