Untitled
Abstract: No abstract text available
Text: Advance Product Information July 13, 2006 Wideband LNA with AGC TGA2513 Key Features • • • • • • • • Primary Applications • Wideband Gain Block / LNA • X-Ku Point to Point Radio • IF & LO Buffer Applications Product Description Vd = 5V, Id= 75mA, Vg2 = 2V, Typical Vg1 = -60mV
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TGA2513
TGA2513
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Information June 2, 2005 Ka-Band Packaged MPA TGA4902-SM Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications
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TGA4902-SM
TGA4902-SM
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Untitled
Abstract: No abstract text available
Text: Advance Product Information May 19, 2004 4 Watt Ka Band HPA TGA4505-EPU Key Features • • • • • • • • Frequency Range: 24-31 GHz 23 dB Nominal Gain 35.5 dBm Nominal P1dB @30 GHz 36.0 dBm Nominal Psat @30 GHz 40 dBc at SCL Pout 20dBm 0.25 um pHEMT 2MI Technology
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TGA4505-EPU
20dBm
TGA4505-EPU
36rmosonic
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Information September 21, 2005 32 - 47 GHz Wide Band Driver Amplifier TGA4521 Key Features • • • • • • • • Product Description The TriQuint TGA4521 is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint’s
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TGA4521
16dBm/Tone
TGA4521
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Untitled
Abstract: No abstract text available
Text: Advance Product Information September 18, 2006 Ka-Band Packaged MPA TGA4902-SM Key Features • • • • • Typical Frequency Range: 25 - 35 GHz 25 dBm Nominal P1dB 18 dB Nominal Gain Bias 6 V, 220 mA Package Dimensions: 4.0 x 4.0 x 0.9 mm Primary Applications
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TGA4902-SM
TGA4902-SM
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FGL40N120AND
Abstract: 100W UPS FGL40N120AN IH 001
Text: IGBT FGL40N120AN 1200V NPT IGBT Features Description • High speed switching Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating IH , motor
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FGL40N120AN
O-264
FGL40N120AND
FGL40N120AND
100W UPS
FGL40N120AN
IH 001
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RL96
Abstract: IEC1131 VNQ860 VNQ860SP
Text: P6 VNQ860 / VNQ860SP QUAD CHANNEL HIGH SIDE DRIVER TYPE VNQ860 VNQ860SP RDS on (*) IOUT VCC 270mΩ 0.25A 36V (*) Per each channel CMOS COMPATIBLE I/Os • UNDERVOLTAGE & OVERVOLTAGE nSHUT- DOWN ■ SHORTED LOAD PROTECTION ■ THERMAL SHUTDOWN ■ VERY LOW STAND-BY CURRENT
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VNQ860
VNQ860SP
VNQ860,
VNQ860SP
RL96
IEC1131
VNQ860
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FDMA1028NZ
Abstract: No abstract text available
Text: FDMA1028NZ tm Dual N-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package x 3.7 A, 20V. RDS ON = 68 m: @ VGS = 4.5V RDS(ON) = 86 m: @ VGS = 2.5V solution for dual switching requirements in cellular
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FDMA1028NZ
FDMA1028NZ
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FDMC7692
Abstract: No abstract text available
Text: FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m: Features General Description Max rDS on = 8.5 m: at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7692
FDMC7692
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FDD5810-F085
Abstract: FDD5810 FDD5810_F085
Text: FDD5810_F085 N-Channel Logic Level Trench MOSFET 60V, 36A, 27m: Features Applications RDS ON = 22m: Typ.), VGS = 5V, ID = 29A Motor / Body Load Control Qg(5) = 13nC (Typ.), VGS = 5V ABS Systems Low Miller Charge Powertrain Management
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FDD5810
O-252
O-252)
FDD5810-F085
FDD5810_F085
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FDMC4435BZ
Abstract: 63a23 05MAX00 FDMC4435B
Text: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC4435BZ
FDMC4435BZ
63a23
05MAX00
FDMC4435B
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FDN8601
Abstract: No abstract text available
Text: FDN8601 N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m: Features General Description Max rDS on = 109 m: at VGS = 10 V, ID = 1.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
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FDN8601
FDN8601
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FDMS86201
Abstract: FDMS86201/pdf/MAX13042EETD -datasheet
Text: Preliminary Datasheet FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS86201
FDMS86201
FDMS86201/pdf/MAX13042EETD -datasheet
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FDS6670AS
Abstract: FDS6670A
Text: FDS6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6670AS
FDS6670AS
FDS6670A
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IRFZ44N APPLICATION NOTE
Abstract: dc motor irfz44n IRFz44n equivalent datasheet of irfz44n MOSFET IRFZ44N IRFZ44N datasheet for irfz44n pin of IRFZ44N IRFZ44N DATASHEET 0010T2
Text: IRFZ44N ! N-CHANNEL Power MOSFET APPLICATION FEATURES Ultra Low ON Resistance Buck Converter High Side Switch DC motor control , Ups .etc , & other Application RDS ON Max. VDSS 55V 17.5mȍ Low Gate Charge Dynamic dv/dt Rating ID Inductive Switching Curves
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IRFZ44N
O-220
IRFZ44N APPLICATION NOTE
dc motor irfz44n
IRFz44n equivalent
datasheet of irfz44n
MOSFET IRFZ44N
IRFZ44N
datasheet for irfz44n
pin of IRFZ44N
IRFZ44N DATASHEET
0010T2
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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Untitled
Abstract: No abstract text available
Text: P6 VNQ860 / VNQ860SP QUAD CHANNEL HIGH SIDE DRIVER PRELIMINARY DATA TYPE VNQ860 VNQ860SP RDS on (*) IOUT VCC 270mΩ 0.25A 36V (*) Per each channel CMOS COMPATIBLE I/Os • UNDERVOLTAGE & OVERVOLTAGE n SHUT- DOWN ■ SHORTED LOAD PROTECTION ■ THERMAL SHUTDOWN
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VNQ860
VNQ860SP
VNQ860,
VNQ860SP
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PCB Rogers RO4003
Abstract: TGA2925-SG RO4003
Text: Advance Product Information Aug 16, 2005 5.6 Watt 3.5GHz Packaged HPA TGA2925-SG Key Features • • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 2.5%EVM @29dBm OFDM signal at 3.5GHz 37.5 dBm Nominal Psat Internally Partially Matched
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TGA2925-SG
29dBm
TGA2925-SG
PCB Rogers RO4003
RO4003
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TGA4508
Abstract: 2005 ka
Text: Advance Product Information July 19, 2005 Ka Band Low Noise Amplifier TGA4508 Key Features • • • • • • • Preliminary Measured Data Typical Frequency Range: 30 - 42 GHz 21 dB Nominal Gain 2.8 dB Nominal Noise Figure 14 dBm Nominal P1dB @ 38 GHz
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TGA4508
0007-inch
TGA4508
2005 ka
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TGA2922-SG
Abstract: 802.11a Amplifier sg 81 AVX06035J1R2BBT AVX06035J3R9BBT RO4003
Text: Advance Product Information April 27, 2005 2 Watt 802.11a Packaged Amplifier TGA2922-SG Key Features • • • • • • • • 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 480mA 34 dBm Nominal P1dB @ 8V 480mA 2.5% EVM at 25dBm output power
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TGA2922-SG
480mA
25dBm
-50dBc
22dBm
TGA2922-SG
802.11a Amplifier
sg 81
AVX06035J1R2BBT
AVX06035J3R9BBT
RO4003
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MURP20020CT/D SEMICONDUCTOR TECHNICAL DATA Data Sheet SWITCHMODE MURP20020CT Designer's Ultrafast Power Rectifier ULTRAFAST RECTIFIER 200 AMPERES 200 VOLTS POWERTAP II Package Features mesa epitaxial construction with glass passivation. Ideally suited
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MURP20020CT/D
MURP20020CT
MURP20020CT/D*
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PCB Rogers RO4003 substrate datasheet
Abstract: 5 Watt S-Band Power Amplifier 6 ghz amplifier 10w HPA 1200 PCB Rogers RO4003 RO4003 TGA2924-SG MIL-C-2 Rogers RO4003 substrate
Text: Advance Product Information Aug 16, 2005 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched
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TGA2924-SG
TGA2924-SG
PCB Rogers RO4003 substrate datasheet
5 Watt S-Band Power Amplifier
6 ghz amplifier 10w
HPA 1200
PCB Rogers RO4003
RO4003
MIL-C-2
Rogers RO4003 substrate
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ALLOY 52
Abstract: 100V 60A Diode
Text: Jolltron PRODUCT DEVICES.INC. OÂTÂL SCHOTTKY POWER' RECTIFIERS MAXIMUM R A T I N G S PER DIO D E 100 V 70 A PEAK ONE CYCLE NON-REPETITIVE, SURGE CURRRENT IFSM 600 A PEAK REPETITIVE REVERSE CURRENT IRRM 1.0 A TJ -65 TO +175 °C Ts tg -55 TO + 150 °C RtJc
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60ONDITIONS
300nS,
SDR60100
MIL-S-19500
ALLOY 52
100V 60A Diode
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