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    P-CHANNEL MOSFET CODE AS Search Results

    P-CHANNEL MOSFET CODE AS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL MOSFET CODE AS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STS8C6H3LL N-channel 30 V, 0.019 Ω typ., 8 A, P-channel 30 V, 0.024 Ω typ., 6 A STripFET Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code Channel VDS RDS on max ID 0.021 Ω 8A 0.030 Ω 5A N STS8C6H3LL 30 V P • STripFET™V N-channel Power MOSFET


    Original     		PDF DocID023495

    pch 1275

    Abstract: PowerFLAT
    Text: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 40 A, P-channel 30 V, 0.024 Ω typ., 30 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet — preliminary data Features Order code STL40C30H3LL N-channel STL40C30H3LL (P-channel) VDS RDS(on) max


    Original     		PDF STL40C30H3LL pch 1275 PowerFLAT

    Untitled

    Abstract: No abstract text available
    Text: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code Channel VDS 30 V P 1 0.03 Ω @ 10 V 8A • RDS on * Qg industry benchmark


    Original     		PDF STL40C30H3LL DocID023874

    Untitled

    Abstract: No abstract text available
    Text: STS8C5H30L N-channel 30 V, 0.018 Ω typ., 8 A, P-channel 30 V, 0.045 Ω typ., 5 A Power MOSFET in a SO-8 package Datasheet - production data Features Order code Channel VDS 5 N 8 STS8C5H30L 30 V P RDS on max ID 0.022 Ω 8A 0.055 Ω 5A • Conduction losses reduced


    Original     		PDF STS8C5H30L DocID10809

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain


    Original     		PDF MOS200836 H2301N H2301N OT-23 183oC 217oC 260oC 10sec

    H9435S

    Abstract: diode marking 91a marking CODE 91A h4435 91A MARKING
    Text: HI-SINCERITY Spec. No. : MOS200101 Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 1/5 MICROELECTRONICS CORP. H4435S • P-Channel Enhancement-Mode MOSFET -30V, -9.1A) 8-Lead Plastic SO-8 Package Code: S H4435S Symbol & Pin Assignment Features


    Original     		PDF MOS200101) H4435S H4435S 183oC 217oC 260oC 245oC H9435S diode marking 91a marking CODE 91A h4435 91A MARKING

    H9435S

    Abstract: SO-8 V 052
    Text: HI-SINCERITY Spec. No. : MOS200509 # Issued Date : 2005.10.01 Revised Date : 2010.07.08 Page No. : 1/5 MICROELECTRONICS CORP. H9435S/H9435DS • P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment


    Original     		PDF MOS200509( H9435S/H9435DS H9435S H9435DS 217oC 260oC 245oC H9435S H9435DS SO-8 V 052

    H9435S

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features


    Original     		PDF MOS200509 H9435S H9435S Un150oC 200oC 183oC 217oC 260oC 245oC

    TP0610K-T1-E3

    Abstract: S 1476 TP0610K TP0610K-T1-GE3 S10 SOT23 MARKING
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 2002/95/lectual 18-Jul-08 TP0610K-T1-E3 S 1476 TP0610K TP0610K-T1-GE3 S10 SOT23 MARKING

    H9435S

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200509 # Issued Date : 2005.10.01 Revised Date : 2008.12.04 Page No. : 1/4 MICROELECTRONICS CORP. H9435S/H9435DS • P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment


    Original     		PDF MOS200509( H9435S/H9435DS H9435S H9435DS 183oC 217oC 260oC 245oC H9435S H9435DS

    TP0610K-T1-E3

    Abstract: No abstract text available
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 18-Jul-08 TP0610K-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    TP0610K-T1-E3

    Abstract: TP0610KT1E3
    Text: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3.0 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 18-Jul-08 TP0610K-T1-E3 TP0610KT1E3

    VISHAY SOT LOT CODE

    Abstract: marking 6k sot-23 package sot23 footprint TP0610K-T1-E3
    Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K 2002/95/EC 11-Mar-11 VISHAY SOT LOT CODE marking 6k sot-23 package sot23 footprint TP0610K-T1-E3

    TP0610K-T1

    Abstract: TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3
    Text: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability


    Original     		PDF TP0610K O-236 OT-23) TP0610K-T1-E3 TP0610K-T1-GE3 2002/95/lectual 18-Jul-08 TP0610K-T1 TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code VDS STL40C30H3LL N-channel RDS(on) max ID 0.021 Ω @ 10 V 10 A


    Original     		PDF STL40C30H3LL DocID023874

    Si5435DC

    Abstract: Si5435DC-T1
    Text: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code


    Original     		PDF Si5435DC Si5435DC-T1 S-21251--Rev. 05-Aug-02

    Si5435DC

    Abstract: 41AR Si5435DC-T1
    Text: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code


    Original     		PDF Si5435DC Si5435DC-T1 08-Apr-05 41AR

    Si5435DC

    Abstract: Si5435DC-T1
    Text: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code


    Original     		PDF Si5435DC Si5435DC-T1 18-Jul-08

    MTM23123

    Abstract: No abstract text available
    Text: MTM23123 Silicon P-channel MOSFET For switching • Overview  Package MTM23123 is P-channel MOS FET for load switch circuits.  Code SMini3-G1-B  Pin Name 1: Gate 2: Source 3: Drain  Features  Low voltage drive 2.5 V, 4 V  Realization of low on-resistance, using extremely fine process


    Original     		PDF MTM23123 MTM23123

    marking c08

    Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
    Text: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MARKING CODE: CMLDM8002A: C08 CMLDM8002AJ: CJ8 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode


    Original     		PDF CMLDM8002A CMLDM8002AJ OT-563 CMLDM8002A: CMLDM8002AJ: CMLDM8002A CMLDM8002AJ CMLDM8002AJ, 500mA marking c08 MARKING CODE 24 TRANSISTOR

    MTM23110

    Abstract: No abstract text available
    Text: MTM23110 Silicon P-channel MOSFET For switching • Overview  Package MTM23110 is P-channel MOS FET for load switch circuits.  Code SMini3-G1-B  Pin Name 1: Gate 2: Source 3: Drain  Features  Low voltage drive 1.8 V, 2.5 V, 4 V  Realization of low on-resistance, using extremely fine process


    Original     		PDF MTM23110 MTM23110

    DSS SOT23

    Abstract: marking code MV mosfet SOT23 Diode SOT-23 marking 3V lp0801k1
    Text: LP0801 Supertex inc. Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information p Order Number / Package B V dcs max (min) VGSflh) (max) TO-236AB* Die P8U * -16.5V 120 -200mA -1.0V LP0801K1 LP0801ND where * = 2-week alpha date code


    OCR Scan     		PDF LP0801 -200mA O-236AB* LP0801K1 LP0801ND OT-23: OT-23. DSS SOT23 marking code MV mosfet SOT23 Diode SOT-23 marking 3V

    g 995

    Abstract: No abstract text available
    Text: 32E D m 023b32Q OOlbôQ? 3 H S I P BF 995 Silicon N Channel MOSFET Tetrode SIEMENS/ SPCLi SEMICONDS _ For FM and VHF TV input and mixer stages Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 995 MB Q62702-F872


    OCR Scan     		PDF 023b32Q Q62702-F872 Q62702-F936 23b32Ã g 995