MTM23123
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features Low voltage drive (2.5 V, 4 V) Realization of low on-resistance, using extremely fine process (14 mΩ/mm /mm2) 2.1±0.1 0.9+0.2 –0.1 5°
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MTM23123
MTM23123
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mtm231230
Abstract: No abstract text available
Text: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series Overview The new MTM23123/MTM23110/MTM23223/MTM23224 MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras,
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MTM23123/MTM23110/MTM23223/MTM23224
mtm231230
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Untitled
Abstract: No abstract text available
Text: MTM23123 Silicon P-channel MOSFET For switching • Overview Package MTM23123 is N-channel MOS FET for load switch circuits. Code SMini3-G1-B Pin Name 1: Gate 2: Source 3: Drain Features Low voltage drive 2.5 V, 4 V Realization of low on-resistance, using extremely fine process
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MTM23123
MTM23123
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-10702 Revision. 2 Product Standards MOS FET MTM761230LBF MTM761230LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.2 MTM23123 in WSMini6 type package 0.13 6 5 4 1 2 3 • Features 1.7 2.1 Low Drain-source On-state Resistance : RDS on typ. = 36 m (VGS = -4 V)
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TT4-EA-10702
MTM761230LBF
MTM23123
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14177 Revision. 2 Product Standards MOS FET MTM231232LBF MTM231232LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.3 MTM76123 in SMini3 type package 0.15 3 Low Drain-source On-state Resistance : RDS on typ. = 40 m (VGS = -4 V)
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TT4-EA-14177
MTM231232LBF
MTM76123
UL-94
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mtm231230l
Abstract: mtm231230
Text: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series Overview The new MTM23123/MTM23110/MTM23223MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras, digital video
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MTM23123/MTM23110/MTM23223MOSFETs
MTM23223
mtm231230l
mtm231230
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MTM23123
Abstract: No abstract text available
Text: MTM23123 Silicon P-channel MOSFET For switching • Overview Package MTM23123 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Pin Name 1: Gate 2: Source 3: Drain Features Low voltage drive 2.5 V, 4 V Realization of low on-resistance, using extremely fine process
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MTM23123
MTM23123
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MTM23123
Abstract: No abstract text available
Text: Reference Spice Parameter MTM23123 Device symbol Product name: MTM23123 Product type: MOSFET 3 1 2 Parameters *$ .SUBCKT MTM23123 1 2 3 M_Q1 D 1 2 2 MINT D_D1 3 2 DBD Caution : Applicable at 25 degree celsius only. D_D2 3 1 DGD D_D3 1 X DZD D_D4 2 X DZD R_R1 D 3 0.02 TC=0.0059
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MTM23123
MTM23123
700E-9
0E-11
81E-12
526E-12
1EMTM23123
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Untitled
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features Low voltage drive (2.5 V, 4 V) Realization of low on-resistance, using extremely fine process 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10 0.9±0.1
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MTM23123
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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features Low voltage drive (2.5 V, 4 V) Realization of low on-resistance, using extremely fine process
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2002/95/EC)
MTM23123
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p-channel mosfet BL
Abstract: MTM23123
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) MTM23123 Silicon P-channel MOSFET For digital circuits Unit: mm • Features Low voltage drive (2.5 V, 4 V) Realization of low on-resistance, using extremely fine process
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2002/95/EC)
MTM23123
p-channel mosfet BL
MTM23123
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MTM231230L
Abstract: mtm231230 MTM23223 MTM23110 MTM23123 MTM23224
Text: Attains the industry’s lowest on-resistance with an SMini 2120 package size. Small, Low On-Resistance MOSFET Series Overview The new MTM23123/MTM23110/MTM23223/MTM23224 MOSFETs contribute to reduced dimensions and weight as well as lower power consumption for cellular phones, digital still cameras,
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MTM23123/MTM23110/MTM23223/MTM23224
MTM231230L
mtm231230
MTM23223
MTM23110
MTM23123
MTM23224
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MTM23123
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal MTM23123 Silicon P-channel MOSFET For digital circuits • Features Package Low voltage drive (2.5 V, 4 V) Realization of low on-resistance, using extremely fine process Symbol Rating Unit Drain-source surrender voltage
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MTM23123
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Untitled
Abstract: No abstract text available
Text: Doc No. TA4-EA-06224 Revision. 1 Product Standards AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION Integrated Wireless Power Receiver Solution WPC Ver. 1.1 Compliant
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TA4-EA-06224
AN32258A
48easures
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MN864779
Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Text: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.
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A000021E
MN864779
MN88472
AN12947a
MN6627553
MIP3E3SMY
AN22004A
mip2E2dmy
MIP2F2* replacement
MIP2E7DMY
MIP3E50MY
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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AD9272
P462-ND
LNG295LFCP2U
P463-ND
LNG395MFTP5U
220v AC voltage stabilizer schematic diagram
LG color tv Circuit Diagram tda 9370
1000w inverter PURE SINE WAVE schematic diagram
schematic diagram atx Power supply 500w
TV SHARP IC TDA 9381 PS
circuit diagram wireless spy camera
9744 mini mainboard v1.2
sony 279-87
transistor E 13005-2
superpro lx
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Untitled
Abstract: No abstract text available
Text: Product Standards Tentative Ver.1.11 AN32258A http://www.semicon.panasonic.co.jp/en/ INTEGRATED WIRELESS POWER SUPPLY RECEIVER, Qi WIRELESS POWER CONSORTIUM COMPLIANT FEATURES DESCRIPTION Integrated Wireless Power Receiver Solution WPC Ver. 1.1 Compliant
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