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    P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Search Results

    P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDS336P

    Abstract: No abstract text available
    Text: N August 1996 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density,


    Original     		PDF NDS336P NDS336P

    NDC652P

    Abstract: No abstract text available
    Text: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDC652P NDC652P

    NDB6020P

    Abstract: NDP6020P
    Text: N November 1996 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		PDF NDP6020P NDB6020P NDB6020P

    marking 652 fairchild

    Abstract: No abstract text available
    Text: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDC652P NF073 marking 652 fairchild

    NDS356AP

    Abstract: No abstract text available
    Text: N September 1996 NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density,


    Original     		PDF NDS356AP NDS356AP

    CBVK741B019

    Abstract: F63TNR FDC633N NDC652P r rca 631
    Text: March 1996 NDC652P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDC652P CBVK741B019 F63TNR FDC633N NDC652P r rca 631

    NDS352P

    Abstract: No abstract text available
    Text: March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -0.85A, -20V. RDS ON = 0.5Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    Original     		PDF NDS352P NDS352P

    FDC636P

    Abstract: SOIC-16 28A-600
    Text: May 1998 FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDC636P OT-23 FDC636P SOIC-16 28A-600

    NDS352P

    Abstract: No abstract text available
    Text: March 1996 NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -0.85A, -20V. RDS ON = 0.5Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    Original     		PDF NDS352P NDS352P

    FDC636P

    Abstract: SOIC-16 iss-400 diode
    Text: May 1998 FDC636P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDC636P OT-23 FDC636P SOIC-16 iss-400 diode

    Untitled

    Abstract: No abstract text available
    Text: March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDN358P

    NDS356P

    Abstract: No abstract text available
    Text: March 1996 NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -1.1 A, -20V. RDS ON = 0.3Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    Original     		PDF NDS356P NDS356P

    NDS356P

    Abstract: No abstract text available
    Text: March 1996 NDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -1.1 A, -20V. RDS ON = 0.3Ω @ VGS = -4.5V. These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    Original     		PDF NDS356P NDS356P

    FDN358P

    Abstract: SOIC-16
    Text: March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDN358P FDN358P SOIC-16

    NDB6030PL

    Abstract: NDP6030PL
    Text: June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6030PL NDB6030PL NDB6030PL

    NDS336P

    Abstract: No abstract text available
    Text: June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF NDS336P NDS336P

    diode 6t6

    Abstract: NDC632P
    Text: National June 1996 Semiconductor" NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC632P Supe202 diode 6t6 NDC632P

    NDB6030PL

    Abstract: NDP6030PL 10v70
    Text: June 1 997 FAIRCHILD MICDNDUCTDR t m NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDP6030PL NDB6030PL 10v70

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDS352AP NDS352Ap

    ARDV sot 23

    Abstract: DS332P
    Text: June 1997 FAIRCHILD M ICON DUCTOR tm NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF NDS332P ARDV sot 23 DS332P

    Untitled

    Abstract: No abstract text available
    Text: March 1998 F/\IRCHII_ID M ICDNDUCTO R tm FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF FDN338P FDN338P

    bu 517

    Abstract: NDS352P
    Text: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS352P b50113D 003T74G bSD113D bSD113D 317H2 bu 517 NDS352P

    Untitled

    Abstract: No abstract text available
    Text: June 1997 RAIRCHII-D M ICDNDUCTO R tm NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDP6030PL NDB6030PL

    ndp602dp

    Abstract: NDB6020P NDP6020P EFB810-3/4-3/NDP6020P
    Text: |R C H | September 1997 SEM ICONDUCTÜR tm NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDP6020P NDB6020P ndp602dp NDB6020P EFB810-3/4-3/NDP6020P