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    P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Search Results

    P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd

    P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		FDN358P PDF

    NDS336P

    Abstract: No abstract text available
    Text: June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		NDS336P NDS336P PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1998 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		FDN338P OT-23 PDF

    NDC632P

    Abstract: No abstract text available
    Text: June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -2.7A, -20V. RDS ON = 0.14Ω @ VGS = -4.5V RDS(ON) = 0.2Ω @ VGS = -2.7V. These P-Channel logic level enhancement mode power field effect transistors are produced using


    Original     		June1996 NDC632P NDC632P PDF

    Diode lt 725

    Abstract: P6020P
    Text: Sept mber 1997 s e m ic d n d u c t o r NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDP6020P NDB6020P P6020P Diode lt 725 PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD S E M IC O N D U C T O R June 1997 tm NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		NDP6030PL NDB6030PL PDF

    FDR856P

    Abstract: SOIC-16 PF740
    Text: March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		FDR856P OT-23 FDR856P SOIC-16 PF740 PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1998 FDC654P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		FDC654P OT-23 PDF

    RFP17N06L

    Abstract: No abstract text available
    Text: Logic-Level Power MOSFETs File Number 2272 RFP17N06L N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors 17 A, 60 V P d s o n l " 0 .1 0 0 N-CHANNEL ENHANCEMENT MODE O D Features: • Design optimized for 5 volt gate drive m Can be driven directly from O-MOS, N-MOS, TTL Circuits


    OCR Scan     		RFP17N06L RFP17N06L 40tagC R06HFP17N06L07 250u9 GFSRFPf7N06lCF6 PDF

    Untitled

    Abstract: No abstract text available
    Text: PAIRCHII-D March 1998 M ICDNDUCTQ R ! FDC654P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		FDC654P PDF

    027Q

    Abstract: NDS336P
    Text: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS


    OCR Scan     		NDS336P --125-C LSD1130 027Q PDF

    Untitled

    Abstract: No abstract text available
    Text: November 1998 FDG6304P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    Original     		FDG6304P PDF

    Small Signal MOSFETs

    Abstract: No abstract text available
    Text: November 1998 FDG6302P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    Original     		FDG6302P Small Signal MOSFETs PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1998 F A I R C H I L D SEM ICONDUCTO R T M FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features SuperS Q T -3 P -C hannel logic level en hancem ent m ode po w e r field effe ct transistors are produced using Fairchild's


    OCR Scan     		FDN338P PDF

    NPN dual transistors ssot-6

    Abstract: FDC6321C FDC6321C DUAL FET FAIRCHILD SOT-223 MARK 46 CBVK741B019 F63TNR SOIC-16
    Text: April 1999 FDC6321C Dual N & P Channel , Digital FET General Description Features These dual N & P Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize


    Original     		FDC6321C NPN dual transistors ssot-6 FDC6321C FDC6321C DUAL FET FAIRCHILD SOT-223 MARK 46 CBVK741B019 F63TNR SOIC-16 PDF

    GF3443

    Abstract: marking CODE 001 SOT-23-6l
    Text: GF3443 P-Channel Logic Level Enhancement-Mode MOSFET VDS –20V RDS ON 65mΩ ID –4.4A SOT-23-6L 0.122 (3.10) 0.114 (2.90) Pin Configuration (Top View) Top View 0.118 (3.00) 0.106 (2.70) 0.067 (1.70) 0.059 (1.50) 0.020 (0.50) 0.010 (0.25) 0.037 (0.95)


    Original     		GF3443 OT-23-6L OT-23-6L MIL-STD-750, GF3443 marking CODE 001 SOT-23-6l PDF

    BSK304SP

    Abstract: bsk304 smd 1a 24v diode
    Text: BSK304SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • P-Channel • Enhancement mode VDS -30 V RDS on 22 mΩ ID • Logic Level -7.6 A • 150°C operating temperature • Avalanche rated S 1 8 D • dv/dt rated S 2 7


    Original     		BSK304SP SIS00062 Q67042-S4065 BSK304SP bsk304 smd 1a 24v diode PDF

    080P3S

    Abstract: BSO080P03S Q67042-S4232
    Text: BSO080P03S OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 8 mΩ ID -14.9 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter


    Original     		BSO080P03S Q67042-S4232 080P3S 080P3S BSO080P03S Q67042-S4232 PDF

    RF1K49093

    Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
    Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		RF1K49093 RF1K49093 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) AN7254 AN9321 AN9322 MS-012AA RF1K4909396 PDF

    2n03l10

    Abstract: SPB73N03S2L-10 SPP73N03S2L-10
    Text: SPP73N03S2L-10 SPB73N03S2L-10 OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 8 mΩ ID 73 A P-TO263-3-2 • Excellent Gate Charge x RDS(on) product (FOM) P-TO220-3-1 •=Superior thermal resistance


    Original     		SPP73N03S2L-10 SPB73N03S2L-10 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4037 2N03L10 P-TO263-3-2 2n03l10 SPB73N03S2L-10 SPP73N03S2L-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: A p r il 1 9 9 6 N ational Semiconductor~ NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese lo g ic level N -C hannel e n h a n ce m e n t m o d e p o w e r fie ld e ffect tra n s isto rs are p ro d u ce d using


    OCR Scan     		NDP6060L NDB6060L PDF

    BSP171P

    Abstract: BSP171
    Text: BSP 171 P SIEMENS Preliminary data SIPMOS^ Power Transistor • P-Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Type VGS 1 V “ > o RDS on 0.3 & CO b -1.8 A il BSP 171 P Vbs -60 V Pin 1 Pin2/4 Pin 3 G D S Package Ordering Code


    OCR Scan     		P-SOT223-4-1 Q67041-S4019 BSP171P BSP171 PDF

    Q1205

    Abstract: ss92 BSS92 transistor sS92 siemens ss92
    Text: SIEMENS BSS92 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type b -0.15 A BSS92 ^DS -240 V Type BSS92 BSS92 BSS 92 Ordering Code Q62702-S497 Q62702-S633 Q62702-S502 flDS(on) 20 a Package Marking


    OCR Scan     		BSS92 BSS92 Q62702-S497 Q62702-S633 Q62702-S502 E6288 E6296 E6325 Q1205 ss92 transistor sS92 siemens ss92 PDF

    2n06l64

    Abstract: P-TO252-3-11 SPD15N06S2L-64
    Text: SPD15N06S2L-64 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 64 m ID 15 A P-TO-252-3-11 P-TO252-3-11 Type Package


    Original     		SPD15N06S2L-64 P-TO-252-3-11 P-TO252-3-11 P-TO-252-3-11 Q67060-S7425 2N06L64 BSPD15N06S2L-64, SPD15N06S2L-64 2n06l64 P-TO252-3-11 PDF