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    080P3S

    Abstract: D149 BSO080P03S IEC61249-2-21 JESD22-A114
    Text: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 mΩ • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications


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    PDF BSO080P03S IEC61249-2-21 080P3S 080P3S D149 IEC61249-2-21 JESD22-A114

    080P3S

    Abstract: D149 D149 diode BSO080P03S D1-49 D-149
    Text: BSO080P03S OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 8 mΩ ID -14.9 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter


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    PDF BSO080P03S 080P3S 080P3S D149 D149 diode BSO080P03S D1-49 D-149

    080P3S

    Abstract: BSO080P03S Q67042-S4232
    Text: BSO080P03S OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 8 mΩ ID -14.9 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter


    Original
    PDF BSO080P03S Q67042-S4232 080P3S 080P3S BSO080P03S Q67042-S4232

    080P3S

    Abstract: D149 D149 diode BSO080P03S NAS1 P-DSO-8
    Text: BSO080P03S OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 8 mΩ ID -14.9 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter


    Original
    PDF BSO080P03S 080P3S 24ngerous 080P3S D149 D149 diode BSO080P03S NAS1 P-DSO-8

    Untitled

    Abstract: No abstract text available
    Text: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 mY • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant


    Original
    PDF BSO080P03S IEC61249-2-21 080P3S

    D149 diode

    Abstract: 1SS100
    Text: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 m: • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant


    Original
    PDF BSO080P03S IEC61249-2-21 080P3S D149 diode 1SS100