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    P-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Search Results

    P-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8771601EA Analog Devices 8-CHANNEL JFET MUX/DEMUX Visit Analog Devices Buy
    5962-8771602EA Analog Devices 8-CHANNEL JFET MUX/DEMUX Visit Analog Devices Buy
    5962-87716022A Analog Devices 8-CHANNEL JFET MUX/DEMUX Visit Analog Devices Buy

    P-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs


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    MPF970

    Abstract: MPF971 MPF910
    Text: MPF970 silicon MPF971 SILICON P-CHANNEL JUNCTION FIELD—EFFECT TRANSISTORS P-CHANNEL Depletion Mode (Type A ) Junction Field-Effect Transistors designed for chopper and high-speed switching applications. JUNCTION FIELD-EFFECT TRANSISTORS M A XIM U M RATINGS


    OCR Scan     		PDF MPF970 MPF971 MPF970 MPF971 MPF910

    MFE4007

    Abstract: mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012
    Text: MFE4007 silicon MFE4012 thru P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Field-Effect Transistors designed for general-purpose amplifier applications. P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS • Tightly Specified loss Ranges — 2:1 for All Types


    OCR Scan     		PDF MFE4007 MFE4012 MFE4007 mfe 4010 MFE4010 3 DG 1008 MFE4008 MFE4009 MFE4011 MFE4012

    philips bsd215

    Abstract: BST110 BF909WR
    Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment


    OCR Scan     		PDF BC264A BC264B BC264C BC264D BF245A BST120 BST122 PHP112 PHP125 PHC2102501 philips bsd215 BST110 BF909WR

    Untitled

    Abstract: No abstract text available
    Text: 9-97 E3 ^ ^ ^ ^ ^ ^ ^ ^^ ^ Jaj> an est^ c|u ivalen ^ F ^ n h £|jes SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 N Channel N Channel N Channel P Channel Unit Limit


    OCR Scan     		PDF 2SK113 2SK152 2SK363 2SJ44 IFN113 IFN152 IFN363 IFP44 NJ132 NJ132L

    2N5245

    Abstract: 2N5247 2NS245
    Text: TYPES 2NS245 THRU 2N5247 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 6810 9 1 7 , S E P T E M B E R 1968 N-CHANNEL SILECTf FIELD-EFFECT TRANSISTORS t FOR VHF AMPLIFIER AND MIXER APPLICATIONS High Power G a in . . . 10 dB Min at 400 MHz


    OCR Scan     		PDF 2NS245 2N5247 2N524S, 2NS247) 2N5245

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.


    OCR Scan     		PDF bb53T31 DQ240CH

    2N5949

    Abstract: 2n5961
    Text: TYPES 2N5949 THRU 2N5953 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . D L -S 7 0 1 1 3 3 8 . A P R IL 1 9 7 0 SILECTt FIELD-EFFECT TRANSISTORS^ • Narrow IDSS and VQS{off Ranges • For Low-Noise Audio-Frequency Amplifier Applications


    OCR Scan     		PDF 2N5949 2N5953 IL-STD-202C 2n5961

    2N3330

    Abstract: 2N3332 2N3331 2n3329
    Text: TYPES 2N3329 THRU 2N3332 P CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O D L S 644905, M A R C H 1964 FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS


    OCR Scan     		PDF 2N3329 2N3332 2K3329 2N3330 2N333I 2N3331

    J175

    Abstract: J174 J176 J177
    Text: Philips Components J174;J175 J176;J177 y v. P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.


    OCR Scan     		PDF M89-1045/RC J175 J174 J176 J177

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE n r •' btS3T31 Q017257•1 ■ * 2SE D BSJ174 TO 177 T - 3 7 -3 5 " J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical P-channel junction FETs in a plastic TO-92 envelope and intended for application with anarog switches, choppers, commutators etc.


    OCR Scan     		PDF btS3T31 Q017257â BSJ174 BSJ175 BSJ176 BSJ177

    BFW11

    Abstract: BFW10 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08
    Text: 711002b 00b7bb4 IbS • I P HI N BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to


    OCR Scan     		PDF 711002b 00b7bb4 BFW10 BFW11 8fw10 711002t. Q0b7b73 BFW10 BFW11 bfw10 equivalent bfw10 transistor bfw11 equivalent BFW10 in drain resistance 1Z62 BFW118 electromedical 7z08

    5T6449

    Abstract: A5T6449 5T6450 8T6449
    Text: TYPES A5T6449, A5T6450, A8T6449, A8T6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . P L -S 1 2 0 1 0 , M A Y 1 9 7 3 - R E V I S E D O C T O B E R 1 9 7 8 S ILE C T t HIGH-VOLTAGE FIELD-EFFECT TRANSISTORS


    OCR Scan     		PDF A5T6449, A5T6450, A8T6449, A8T6450 A8T6449) 5T6449 A5T6449 5T6450 8T6449

    2N5640 MOTOROLA

    Abstract: Motorola 2n4393 2N4393 motorola 2N4092 2N4352 2N4352 FET 2N4391 MOTOROLA 2N5639 MOTOROLA 2N5640 MPF970
    Text: Transistors Field effect transistors M otorola offers a line o f field -effect transistors th at encompasses the latest technology and covers the full range of F E T applications. Included is a wide variety o f junction FETs and M O S FE T s, w ith N- or P-channel polarity w ith both single and dual gates. These FETs include devices developed fo r operation


    OCR Scan     		PDF 2N3993 2N3994 2N4091 2N4092 2N4093 2N4351 2N4352 2N4391 2N4392 2N4393 2N5640 MOTOROLA Motorola 2n4393 2N4393 motorola 2N4092 2N4352 2N4352 FET 2N4391 MOTOROLA 2N5639 MOTOROLA 2N5640 MPF970

    Untitled

    Abstract: No abstract text available
    Text: PMBF4391 PMBF4392 PMBF4393 bbS3^31 0025813 383 « A P X N AMER PHILIPS/DISCRETE b7E D y v . N-CHANNEL FETS Symmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended fo r application in thick and thin-film circuits. The transistors are intended fo r low-power


    OCR Scan     		PDF PMBF4391 PMBF4392 PMBF4393 bbS3T31

    Field Effect Transistors

    Abstract: MMCF4223 MMCF4224
    Text: MMCF4223 MMCF4224 SILICON FLIP-CHIP N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS F lip-C hip — N-channel ju n c tio n fie ld e ffe ct transistors designed fo r V H F a m p lifie r and m ixe r applications. • Drain and Source Interchangeable M AXIM UM RATINGS


    OCR Scan     		PDF MMCF4223 MMCF4224 MMCF4223, 10MAdc mmcf4223 Field Effect Transistors MMCF4224

    2N6449

    Abstract: No abstract text available
    Text: TYPES 2N6449, 2N6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L -S 1 2 0 0 3 , M A Y 1 9 7 3 -R E V IS E D S E P T E M B E R 1 9 7 6 HIGH-VOLTAGE FIELD-EFFECT TRANSISTORS • High V BR GSS . . . 300 V Min (2N6449) • High Dissipation Capability . . . 5 W


    OCR Scan     		PDF 2N6449, 2N6450 2N6449) 2N6449

    BFQ10

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL MIE J> WB 711002b 002b51S S Ö P H I N BFQ10 to 16 T -2 7 -2 7 — DUAL N-CHANNEL FETS Dual symmetrical n-channel silicon planar epitaxial junction field-effect transistors in a TO-71 metal envelope, with electrically insulated gates and a common substrate connected to the envelope; intended


    OCR Scan     		PDF 711002b 002b51S BFQ10 002b22ü Q02b221

    P1086

    Abstract: No abstract text available
    Text: 9-97 F 10 Small Outline Surface Mount Package Devices P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS Device Type VGS(OFF) I gss bvgss Max Min @IG (V) (mA) (nA) @Vgs (V) Min toss Conditions lim its Max Vos Id Min Max @VDS (nA) (mA) (mA) (V) (V) (V) (V)


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    J202 equivalent

    Abstract: No abstract text available
    Text: FMMJ201 to FM M J204 SOT23 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS PARTMARKING DETAILS: FMMJ201 FM M J202 FM M J203 FM M J204 - P01 P02 PO3 P 04 ABSOLUTE MAXIMUM RATINGS at Tamb = 2 5°C -40V Gate Drain or Gate-Source Voltage Notes Continous Forward Gate Current


    OCR Scan     		PDF FMMJ201 J202 equivalent

    TMPF3820

    Abstract: TMPF5116 PJ99 TMPFJ271 TMPF5020 TMPF2608 TMPF2609 TMPF3329 TMPF3330 TMPF3331
    Text: SPRAGUE/SEMICOND GROUP 8514019 SPRAGUE. ^3 D • flS13flS0 0003^12 0 S E M IC ON D S/ ICS 93D 03612 SMALL-OUTLINE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oh V(BR)GSS Device Type Min. ftlG (V) (l*A) TMPF2608


    OCR Scan     		PDF AS13A5D TMPF2608 TMPF2609 TMPF3329 TMPF3820 TMPF5116 PJ99 TMPFJ271 TMPF5020 TMPF3330 TMPF3331

    Untitled

    Abstract: No abstract text available
    Text: SPRAGUE/SENICOND 8514019 SPRAGUE. GROUP D • 0513050 S E M IC ON DS /ICS G QD 3 b G 4 1 93D 03604 J> - 7 ^ 2 .7 - z . s " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS P-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oH VjBfljGSS I Device Type


    OCR Scan     		PDF TP3994 TP4381 TP5018 TP5019 TP5020 TP5021 TP5033 TP5114 TP5115 TP5116

    CP650

    Abstract: CP651 2N4448 2N4445 Crystalonics TELEDYNE teledyne crystalonics CP652 CP653
    Text: CP650 CP651 CP652 CP653 PO W RFET SILICON E P IT A X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS GEOMETRY 424, PG. 58 • • • • LOW R d s - 5 Ohms TYPICAL LOW Cgd - 20 pfd TYPICAL HIGH lDSS - 0.5 Amp TYPICAL HIGH gm 150,000 /xmhos TYPICAL ELECTRICAL DATA


    OCR Scan     		PDF CP650 CP651 CP652 CP653 CP653 2N4448 2N4445 Crystalonics TELEDYNE teledyne crystalonics

    P-Channel Depletion Mode FET

    Abstract: P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091 2N4091 2N4856 MPF971
    Text: Motorola offers a line of field-effect transistors that encom­ passes the latest technology and covers the full range of FET applications. Included here is a wide variety of junction FETs, MOSFETs with P- or N-channel polarity with both single and dual gates and TMOS FETs. These FETs include devices de­


    OCR Scan     		PDF MPF971 N3993 N3994 2N4859A 2N4856A 2N4856 N4859 2N4391 MPF4391 2N4091 P-Channel Depletion Mode FET P-Channel Depletion Mosfets 2N4391 MOTOROLA MPF970 "P-Channel JFETs" JFETs Junction FETs MPF4091