Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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mosfet pch 3a 60v
Abstract: JESD97 STS4C3F60L
Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly
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STS4C3F60L
STS4C3F60L
mosfet pch 3a 60v
JESD97
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Untitled
Abstract: No abstract text available
Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly
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STS4C3F60L
STS4C3F60L
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JESD97
Abstract: STS4C3F60L s4c3f60l mosfet pch 3a 60v
Text: STS4C3F60L N-channel 60V - 0.045 Ω - 4A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS4C3F60L(N-channel) 60V <0.056Ω 4A STS4C3F60L(P-channel) 60V <0.120Ω 3A • Standard outline for easy automated surface mount assembly
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STS4C3F60L
STS4C3F60L
JESD97
s4c3f60l
mosfet pch 3a 60v
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PDF
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n-channel so8 60v
Abstract: STS4C3F60L s4c3f60l Back Light Inverter
Text: STS4C3F60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STS4C3F60L (N-Channel) STS4C3F60L (P-Channel) 60 V 60 V < 0.055 Ω < 0.120 Ω 4A 3A •
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STS4C3F60L
n-channel so8 60v
STS4C3F60L
s4c3f60l
Back Light Inverter
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ZXMC6A09DN8
Abstract: ZXMC6A09DN8TA ZXMC6A09DN8TC 60V dual N-Channel trench mosfet 6A09 Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v
Text: ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure
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ZXMC6A09DN8
ZXMC6A09DN8TA
12lephone:
ZXMC6A09DN8
ZXMC6A09DN8TA
ZXMC6A09DN8TC
60V dual N-Channel trench mosfet
6A09
Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v
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ZXMHC6A07T8
Abstract: ZXMHC6A07T8TA ZXMHC6A07T8TC
Text: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique
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ZXMHC6A07T8
ZXMHC6A07T8
ZXMHC6A07T8TA
ZXMHC6A07T8TC
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C6A07
Abstract: ZXMHC6A07T8 zxmh c6a07 ZXMHC6A07T8TA ZXMHC6A07T8TC
Text: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique
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ZXMHC6A07T8
C6A07
ZXMHC6A07T8
zxmh c6a07
ZXMHC6A07T8TA
ZXMHC6A07T8TC
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marking 564
Abstract: FDC5614P
Text: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications
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FDC5614P
FDC5614P
NF073
marking 564
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FDC5614P
Abstract: No abstract text available
Text: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications
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FDC5614P
FDC5614P
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Untitled
Abstract: No abstract text available
Text: FDC5614P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –3 A, –60 V. Applications
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FDC5614P
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C6A07
Abstract: ZXMHC6A07T8 ZXMHC6A07T8TA ZXMHC6A07T8TC zxmhc6a07t
Text: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique
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ZXMHC6A07T8
SCZXMHC6A07T8DSE
C6A07
ZXMHC6A07T8
ZXMHC6A07T8TA
ZXMHC6A07T8TC
zxmhc6a07t
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ZXMC6A09DN8
Abstract: ZXMC6A09DN8TA ZXMC6A09DN8TC
Text: ZXMC6A09DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure
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ZXMC6A09DN8
ZXMC6A09DN8TA
ZXMC6A09DN8
ZXMC6A09DN8TA
ZXMC6A09DN8TC
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ZXMHC6A07T8
Abstract: ZXMHC6A07T8TA ZXMHC6A07T8TC
Text: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 2.5A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425⍀; ID= -2.2A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure
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ZXMHC6A07T8
ZXMHC6A07T8
ZXMHC6A07T8TA
ZXMHC6A07T8TC
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marking code fairchild FDD5614P
Abstract: FDD5614P 6680 MOSFET CBVK741B019 F63TNR FDD6680 On semiconductor date Code dpak 6680
Text: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 100 mΩ @ VGS = –10 V
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FDD5614P
O-252
marking code fairchild FDD5614P
FDD5614P
6680 MOSFET
CBVK741B019
F63TNR
FDD6680
On semiconductor date Code dpak
6680
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fdd5614p
Abstract: No abstract text available
Text: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 100 mΩ @ VGS = –10 V
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FDD5614P
O-252
fdd5614p
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FDD5614P
Abstract: No abstract text available
Text: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 95 mΩ @ VGS = –10 V
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FDD5614P
O-252
FDD5614P
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FDD5614P
Abstract: No abstract text available
Text: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 100 mΩ @ VGS = –10 V
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FDD5614P
O-252
FDD5614P
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apm4588
Abstract: APM4588K STD-020C
Text: APM4588K Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 60V/5A, RDS(ON) = 38mΩ (typ.) @ VGS = 10V RDS(ON) = 55mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -60V/-3.5A, RDS(ON) = 80mΩ (typ.) @ VGS =-10V
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APM4588K
-60V/-3
apm4588
APM4588K
STD-020C
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F15P06
Abstract: RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 TB334
Text: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet January 2002 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives
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RFD15P06,
RFD15P06SM,
RFP15P06
TA09833.
F15P06
RFD15P06
RFD15P06SM
RFD15P06SM9A
RFP15P06
TB334
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FDD5614P
Abstract: S759
Text: FDD5614P 60V P-Channel PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –15 A, –60 V. RDS ON = 100 mΩ @ VGS = –10 V
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FDD5614P
O-252
FDD5614P
S759
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RFP30P06
Abstract: R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334
Text: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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RFG30P06,
RFP30P06,
RF1S30P06SM
TA09834.
O-247
O-220AB
O-263AB
175oC
RFP30P06
R*P30P06
F1S30P06
RF1S30P06SM
RF1S30P06SM9A
RFG30P06
TB334
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P-CHANNEL 45A TO-247 POWER MOSFET
Abstract: RFG60P06E rfg60p06 TA09836
Text: RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET Features • 60A, 60V The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits
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RFG60P06E
RFG60P06E
175oC
P-CHANNEL 45A TO-247 POWER MOSFET
rfg60p06
TA09836
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Untitled
Abstract: No abstract text available
Text: P *3 3 S RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
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OCR Scan
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RFG30P06,
RFP30P06,
RF1S30P06,
RF1S30P06SM
0-065i2
81e-8)
23e-1
97e-3
37e-5)
78e-9
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