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    ZXMHC6A07T8TC Search Results

    ZXMHC6A07T8TC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMHC6A07T8TC Zetex Semiconductors Original PDF

    ZXMHC6A07T8TC Datasheets Context Search

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    ZXMHC6A07T8

    Abstract: ZXMHC6A07T8TA ZXMHC6A07T8TC
    Text: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique


    Original     		PDF ZXMHC6A07T8 ZXMHC6A07T8 ZXMHC6A07T8TA ZXMHC6A07T8TC

    C6A07

    Abstract: ZXMHC6A07T8 zxmh c6a07 ZXMHC6A07T8TA ZXMHC6A07T8TC
    Text: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique


    Original     		PDF ZXMHC6A07T8 C6A07 ZXMHC6A07T8 zxmh c6a07 ZXMHC6A07T8TA ZXMHC6A07T8TC

    ZXMHC6A07T8

    Abstract: ZXMHC6A07T8TA ZXMHC6A07T8TC
    Text: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 2.5A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425⍀; ID= -2.2A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure


    Original     		PDF ZXMHC6A07T8 ZXMHC6A07T8 ZXMHC6A07T8TA ZXMHC6A07T8TC

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    C6A07

    Abstract: ZXMHC6A07T8 ZXMHC6A07T8TA ZXMHC6A07T8TC zxmhc6a07t
    Text: ZXMHC6A07T8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel V BR DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique


    Original     		PDF ZXMHC6A07T8 SCZXMHC6A07T8DSE C6A07 ZXMHC6A07T8 ZXMHC6A07T8TA ZXMHC6A07T8TC zxmhc6a07t