BG3230
Abstract: BG3230R VPS05604
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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Original
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BG3230
BG3230R
VPS05604
BG3230
EHA07215
OT363
Feb-27-2004
BG3230R
VPS05604
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PDF
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BG3140
Abstract: BG3140R VPS05604
Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance
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Original
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BG3140.
VPS05604
BG3140
BG3140R
EHA07461
OT363
Feb-27-2004
BG3140
BG3140R
VPS05604
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PDF
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BG3130
Abstract: BG3130R VPS05604 3D SOT363
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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Original
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BG3130.
VPS05604
BG3130
BG3130R
EHA07461
OT363
Feb-27-2004
BG3130
BG3130R
VPS05604
3D SOT363
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PDF
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BG3230
Abstract: BG3230R VPS05604
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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Original
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BG3230
BG3230R
VPS05604
BG3230
EHA07215
OT363
BG3230R
VPS05604
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes
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Original
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BG3230
BG3230R
BG3230
VPS05604
EHA07215
OT363
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
VPS05604
BG3130R
EHA07461
BG3130
OT363
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
BG3230R
BG3230
VPS05604
EHA07215
OT363
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PDF
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BCR108S
Abstract: BG3230 BG3230R mosfet 2g2 marking code 4D marking G2s
Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
BG3230R
BG3230
OT363
BCR108S
BG3230R
mosfet 2g2
marking code 4D
marking G2s
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
BG3230R
OT363
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PDF
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marking K1 sot363
Abstract: No abstract text available
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
BG3130R
EHA07461
OT363
OT363
marking K1 sot363
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PDF
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MA2220
Abstract: No abstract text available
Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance
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Original
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BG3140.
BG3140
VPS05604
BG3140R
EHA07461
BG3140
OT363
MA2220
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance
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Original
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BG3140.
BG3140
VPS05604
BG3140R
EHA07461
BG3140
OT363
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PDF
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G2 marking
Abstract: BG3140R
Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance
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Original
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BG3140.
BG3140
BG3140R
OT363
G2 marking
BG3140R
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PDF
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BCR108S
Abstract: BG3230 mosfet 2g2
Text: BG3230 DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes
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Original
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BG3230
OT363
BCR108S
BG3230
mosfet 2g2
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PDF
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22100K
Abstract: No abstract text available
Text: BG3140. 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated gate protection diodes • Low noise figure 2 3 VPS05604 • High gain, high forward transadmittance
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Original
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BG3140.
BG3140
VPS05604
BG3140R
EHA07461
BG3140
OT363
22100K
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PDF
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Untitled
Abstract: No abstract text available
Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
VPS05604
BG3130R
EHA07461
BG3130
OT363
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PDF
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BCR108S
Abstract: BG3130 BG3130R
Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain
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Original
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BG3130.
BG3130
BG3130R
OT363
BCR108S
BG3130
BG3130R
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PDF
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Marking G2
Abstract: BCR108S BG3430R
Text: BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 4 5 6 2 band tuners • Two AGC amplifiers in one single package 1 2 3 with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes
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Original
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BG3430R
OT363
Marking G2
BCR108S
BG3430R
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PDF
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free transistor bs 200
Abstract: marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991
Text: I • 711008b 00bß7Q5 MTS H P H I N BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended fo r use in v.h.f. applications, such as v.h.f.
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OCR Scan
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711008b
BF991
OT143
OT103
free transistor bs 200
marking BS mosfet
FET MARKING CODE
BF991
G2S-50
transistor BF991
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PDF
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.
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OCR Scan
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bbS3T31
QDE473T
BF991
OT143
OT103
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PDF
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BF989
Abstract: sot143 code marking MS bg marking
Text: • bbSB^l DD2M73D bT4 H A P X N AMER PHILIPS/DISCRETE BF989 b?E » J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television
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OCR Scan
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bb53131
DD2M73D
BF989
OT143
20/iA
BF989
sot143 code marking MS
bg marking
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PDF
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BF989
Abstract: SS MARKING CODE mosfet marking code gg
Text: 71 1 0 0 2 b OübfibTb fc,b2 H P H I N BF989 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in u.h.f. applications in television
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OCR Scan
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711002b
BF989
OT143
20/iA
BF989
SS MARKING CODE
mosfet marking code gg
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PDF
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10EZ100
Abstract: FET MARKING CODE BF992 BF992A
Text: b b S 3 cJ24 GD72b21 232 « S I C 3 bBE BF992 NAPC/PHILIPS SEMICONB SILICON N-CHANNEL DUAL GATE MOS-FET D e ple tio n ty p e field -e ffe ct tra nsistor in a p la stic S O T 1 4 3 m icro m in ia tu re envelope w ith source and substrate interconnected. T h is M O S -F E T tetrode is intended fo r use in v.h.f. ap plications, such as v.h.f.
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OCR Scan
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bbS3cJ24
GD7Eb21
BF992
OT143
10EZ100
FET MARKING CODE
BF992
BF992A
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PDF
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PHILIPS MOSFET MARKING
Abstract: SOT103 n channel depletion MOSFET Bf988 transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate
Text: h3E D Philips Components Data sheet status Preliminary specification date of issue October 1990 • bhS3TS4 GOTMBOM BIS m S I C 3 BF988 NAPC/PHILIPS SEMICON] Silicon n-channel dual gate MOS-FET FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TEST ISSUE OF H A NDB O O K SC07 OR D A T A S H E E T
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OCR Scan
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BF988
007M3Q5
BF988
05-max
OT103.
MBB087
PHILIPS MOSFET MARKING
SOT103
n channel depletion MOSFET
transistor SOT103
philips bf988
transistor SOT103 mosfet
transistor scans sheet
dual gate fet
Dual-Gate
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PDF
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