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    P-CHANNEL, DUAL-GATE TETRODE MOSFET Search Results

    P-CHANNEL, DUAL-GATE TETRODE MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    P-CHANNEL, DUAL-GATE TETRODE MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BG3230

    Abstract: BG3230R VPS05604
    Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R VPS05604 BG3230 EHA07215 OT363 Feb-27-2004 BG3230R VPS05604

    BG3140

    Abstract: BG3140R VPS05604
    Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance


    Original     		PDF BG3140. VPS05604 BG3140 BG3140R EHA07461 OT363 Feb-27-2004 BG3140 BG3140R VPS05604

    BG3130

    Abstract: BG3130R VPS05604 3D SOT363
    Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain


    Original     		PDF BG3130. VPS05604 BG3130 BG3130R EHA07461 OT363 Feb-27-2004 BG3130 BG3130R VPS05604 3D SOT363

    BG3230

    Abstract: BG3230R VPS05604
    Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R VPS05604 BG3230 EHA07215 OT363 BG3230R VPS05604

    Untitled

    Abstract: No abstract text available
    Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R BG3230 VPS05604 EHA07215 OT363

    Untitled

    Abstract: No abstract text available
    Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain


    Original     		PDF BG3130. BG3130 VPS05604 BG3130R EHA07461 BG3130 OT363

    Untitled

    Abstract: No abstract text available
    Text: BG3230_BG3230R 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R BG3230 VPS05604 EHA07215 OT363

    BCR108S

    Abstract: BG3230 BG3230R mosfet 2g2 marking code 4D marking G2s
    Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R BG3230 OT363 BCR108S BG3230R mosfet 2g2 marking code 4D marking G2s

    Untitled

    Abstract: No abstract text available
    Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R OT363

    marking K1 sot363

    Abstract: No abstract text available
    Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain


    Original     		PDF BG3130. BG3130 BG3130R EHA07461 OT363 OT363 marking K1 sot363

    MA2220

    Abstract: No abstract text available
    Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance


    Original     		PDF BG3140. BG3140 VPS05604 BG3140R EHA07461 BG3140 OT363 MA2220

    Untitled

    Abstract: No abstract text available
    Text: BG3140. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated gate protection diodes 3 1 VPS05604 • Low noise figure • High gain, high forward transadmittance


    Original     		PDF BG3140. BG3140 VPS05604 BG3140R EHA07461 BG3140 OT363

    G2 marking

    Abstract: BG3140R
    Text: BG3140. DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance


    Original     		PDF BG3140. BG3140 BG3140R OT363 G2 marking BG3140R

    BCR108S

    Abstract: BG3230 mosfet 2g2
    Text: BG3230 DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 OT363 BCR108S BG3230 mosfet 2g2

    22100K

    Abstract: No abstract text available
    Text: BG3140. 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated gate protection diodes • Low noise figure 2 3 VPS05604 • High gain, high forward transadmittance


    Original     		PDF BG3140. BG3140 VPS05604 BG3140R EHA07461 BG3140 OT363 22100K

    Untitled

    Abstract: No abstract text available
    Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain


    Original     		PDF BG3130. BG3130 VPS05604 BG3130R EHA07461 BG3130 OT363

    BCR108S

    Abstract: BG3130 BG3130R
    Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain


    Original     		PDF BG3130. BG3130 BG3130R OT363 BCR108S BG3130 BG3130R

    Marking G2

    Abstract: BCR108S BG3430R
    Text: BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 4 5 6 2 band tuners • Two AGC amplifiers in one single package 1 2 3 with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes


    Original     		PDF BG3430R OT363 Marking G2 BCR108S BG3430R

    free transistor bs 200

    Abstract: marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991
    Text: I • 711008b 00bß7Q5 MTS H P H I N BF991 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended fo r use in v.h.f. applications, such as v.h.f.


    OCR Scan     		PDF 711008b BF991 OT143 OT103 free transistor bs 200 marking BS mosfet FET MARKING CODE BF991 G2S-50 transistor BF991

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 QDE473T fill « A P X N AKER PHILIPS/DISCRETE BF991 b?E D 7 V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope w ith source and substrate interconnected. This MOS-FET tetrode is intended for use in v.h.f. applications, such as v.h.f.


    OCR Scan     		PDF bbS3T31 QDE473T BF991 OT143 OT103

    BF989

    Abstract: sot143 code marking MS bg marking
    Text: • bbSB^l DD2M73D bT4 H A P X N AMER PHILIPS/DISCRETE BF989 b?E » J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T143 microminiature envelope w ith source and substrate interconnected. This M O S-FET tetrode is intended for use in u.h.f. applications in television


    OCR Scan     		PDF bb53131 DD2M73D BF989 OT143 20/iA BF989 sot143 code marking MS bg marking

    BF989

    Abstract: SS MARKING CODE mosfet marking code gg
    Text: 71 1 0 0 2 b OübfibTb fc,b2 H P H I N BF989 J V_ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SO T 1 4 3 microminiature envelope with source and substrate interconnected. This M O S -F E T tetrode is intended for use in u.h.f. applications in television


    OCR Scan     		PDF 711002b BF989 OT143 20/iA BF989 SS MARKING CODE mosfet marking code gg

    10EZ100

    Abstract: FET MARKING CODE BF992 BF992A
    Text: b b S 3 cJ24 GD72b21 232 « S I C 3 bBE BF992 NAPC/PHILIPS SEMICONB SILICON N-CHANNEL DUAL GATE MOS-FET D e ple tio n ty p e field -e ffe ct tra nsistor in a p la stic S O T 1 4 3 m icro m in ia tu re envelope w ith source and substrate interconnected. T h is M O S -F E T tetrode is intended fo r use in v.h.f. ap plications, such as v.h.f.


    OCR Scan     		PDF bbS3cJ24 GD7Eb21 BF992 OT143 10EZ100 FET MARKING CODE BF992 BF992A

    PHILIPS MOSFET MARKING

    Abstract: SOT103 n channel depletion MOSFET Bf988 transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate
    Text: h3E D Philips Components Data sheet status Preliminary specification date of issue October 1990 • bhS3TS4 GOTMBOM BIS m S I C 3 BF988 NAPC/PHILIPS SEMICON] Silicon n-channel dual gate MOS-FET FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TEST ISSUE OF H A NDB O O K SC07 OR D A T A S H E E T


    OCR Scan     		PDF BF988 007M3Q5 BF988 05-max OT103. MBB087 PHILIPS MOSFET MARKING SOT103 n channel depletion MOSFET transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate