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    TRANSISTOR mosfet BF998

    Abstract: BF998 depletion BF998 UCB343 dual gate mosfet
    Text: Philips Components D atasheet status Preliminary specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfel/Gis. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


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    PDF BF998 OT143 MCB346 MCB345 TRANSISTOR mosfet BF998 BF998 depletion UCB343 dual gate mosfet

    transistor SOT103 mosfet

    Abstract: BF902
    Text: PHILIPS INTERNATIONAL 41E D 7 1 1D f l 2 b GQEbô' IS IPHIN T-31-25 Philips Sem iconductors Preliminary specification Silicon n-channel dual gate MOS-FET FEATURES BF902 QUICK REFERENCE DATA • Short channel transistor with high ratio IY,3I:CI3 • Low noise gain-controlled


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    PDF T-31-25 BF902 transistor SOT103 mosfet BF902

    Transistor BF988

    Abstract: BF988 bf988 philips semiconductor PHILIPS MOSFET MARKING philips bf988 dual gate fet MC3344 mosfet 440 mhz dual gate mosfet in vhf amplifier dual gate
    Text: • 711082b QQb7SbM 2Ö4 IPHIN Philips Semiconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfs • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


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    PDF 711082b BF988 Transistor BF988 BF988 bf988 philips semiconductor PHILIPS MOSFET MARKING philips bf988 dual gate fet MC3344 mosfet 440 mhz dual gate mosfet in vhf amplifier dual gate

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high


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    PDF bbS3T31 QQ23b34 BF998 OT143 LtiS3T31

    bf998 Mop

    Abstract: BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv 75bEb DUAL GATE MOS-FET
    Text: b3E ]> Philips Semiconductors Data sheet status Preliminary specification date o f issue April 1991 FEATURES • Short channel transistor with high ratio lYfs 1/Cis • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


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    PDF 75bEb 6F998 OT143 bf998 Mop BF998 marking t54 PHILIPS MOSFET MARKING PHILIPS MOSFET mcb349 dual gate fet N-channel dual-gate MOS-FET for tv DUAL GATE MOS-FET