PVAPOX
Abstract: Horizontal Deflection Switching Transistors
Text: BIPOLAR TRANSISTORS Diffused Collector Technology Al P-VAPOX Features: THERMAL OXIDE High Voltage Capability Fast Switching Tighter hFE Control N+ N+ P+ P+ P High Ruggedness P N- N- N+ N+ Applications: Horizontal Deflection for Colour TVs & Monitors BACK
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HPB-R1
Abstract: HPB-A1 HPB-E1 HPB-R2 AD419 IEC255-5-1977 Yamatake hpb IR 5MM receiver 97 transistor scan
Text: SR. No. Yamatake Corporation SPECIFICATIONS THROUGH SCAN POLARIZED RETROREFLECTIVE SCAN SET E M IT T E R R E C E IV E R H P B -P 1 H P B -T 1 H P B -E 1 H P B -R 1 H P B -A 1 OPEN COLLECTOR OF NPN TRANSISTOR H P B -P 2 H P B -T 2 H P B -E 1 H P B -R 2 H P B -A 2
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30VDC
AD41940E
HPB-R1
HPB-A1
HPB-E1
HPB-R2
AD419
IEC255-5-1977
Yamatake hpb
IR 5MM receiver
97 transistor
scan
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PU4412
Abstract: transistor C1505 PU3112 PU3212 PU4112 PU4212 PU4512
Text: Power Transistor Arrays PU3112, P U 4 H 2 , PU4412 P U 3112, P U 4112, P U 4412 P ackage Dimensions U nit:m m P U 3112 Silicon NPN Epitaxial Planar Type 20.5max. Pow er Amplifier, Switching C om plem entary Pair with P U 3 2 1 2 , P U 4 2 1 2 , P U 4 5 1 2
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PU3112,
PU4412
PU4112,
PU3212,
PU4212,
PU4512
PU3112:
PU4112:
PU4412
transistor C1505
PU3112
PU3212
PU4112
PU4212
PU4512
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smd 2t1
Abstract: PMBTA64 smd transistor 2t1 MARKING CODE SMD IC marking p2U PMBTA63 2T1 SOT-23 sot-23 MARKING CODE 2T1
Text: • bbSBTai □□2SficlLi 355 M A P X N AMER P HI L IP S/DI SCRETE PMBTA63 PMBTA64 b?E i> P-N-P SMALL-SIGNAL DARLINGTON TRANSISTORS P-N-P small-signal da rlin g to n transistors in a m icro m in ia tu re SM D envelope SOT-23 . Designed p rim a rily fo r p re a m p lifie r in p u t a pplications requiring high in p u t impedance.
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PMBTA63
PMBTA64
OT-23)
PMBTA13/14.
PMBTA64
smd 2t1
smd transistor 2t1
MARKING CODE SMD IC
marking p2U
2T1 SOT-23
sot-23 MARKING CODE 2T1
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PU421
Abstract: 1026A PS 1025A PU3113 PU3213 PU4113 PU4213 PU4413 PU4513 6 "transistor arrays" ic
Text: Power Transistor Arrays P U 3213, P U 4213, P U 4513 PU3213, PU4213, PU4513 P a c k a g e D im e n s io n s PU3213 P o w e r A m p lifier, S w itch in g C o m p le m e n ta ry P a ir with P U 3 1 1 3 , P U 4 1 1 3 , P U 4 4 1 3 • F e a tu re s • • •
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PU3213,
PU4213,
PU4513
PU3113,
PU4113,
PU4413
PU3213:
PU421
1026A
PS 1025A
PU3113
PU3213
PU4113
PU4213
PU4413
PU4513
6 "transistor arrays" ic
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BPT-BP314
Abstract: PT05 DARx KP3A BPX21
Text: SILICON PHOTO TRANSISTORS MODEL: B P T -B P x21 , B P T -B P x l4 , B P T -K P x A l , B P T -F P x E l , B P T -N P x C l . A PPLICA TIO N S • Remote Control • Sm oke D etector • Automatic Control System - PC Mouse - Optical Encoder A B SO LU T E NAXIMUM R A T IN G S T a=25'C
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transistor 669
Abstract: CA3096E RCA-CA3096CE CA3096AE CA3096CE CA3096 CA3096A CA3096C thyristor firing circuits schematic of 2f npn transistor
Text: G E SOLID STATE 01 D E | 3A7SDfll DDlMblS M • CA3096, CA3096A, CA3096C T S 3 ¿5 N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Tw o p-n-p Applications:
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CA3096,
CA3096A,
CA3096C
RCA-CA3096CE,
CA3096E,
CA3096AE
CA3096AE.
92CS-33305
CA3096H
transistor 669
CA3096E
RCA-CA3096CE
CA3096CE
CA3096
CA3096A
CA3096C
thyristor firing circuits
schematic of 2f npn transistor
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2SA682-Y
Abstract: 2SC1382 2SA682 2SA682-O AC46C 2SA682O transistor lt 186
Text: 2SA682 v ' J = l > P N P x f c ; ° # * v T J l ^ f ' ;7 > v : * * P C T ^ S SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) U nit in mm O M edium P o w e r A m p lifier A p p lic a tio n s O D riv e r S ta g e A m p lifier A p p lic a tio n s • r S iitE E 'C 'f" •
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2SA682
2SC1382Â
2SC1382
150mA
500mA
500mA,
500mA
-150mA
2SA682
2SA682â
2SA682-Y
2SA682-O
AC46C
2SA682O
transistor lt 186
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str 40200
Abstract: No abstract text available
Text: G E SOLID STATE 01 D E j 3A7S0Ö1 GGlMblS «4 | CA3096, CA3096A, CA3096C “T ' H 3 Z S N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Two p-n-p Applications:
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CA3096,
CA3096A,
CA3096C
CA3096H
str 40200
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thyristor firing circuits
Abstract: RCA 532 PNP Monolithic Transistor Pair CA3018 rca h 532 rca CA3096 NPN PNP Transistor Arrays CA3096E PNP monolithic Transistor Arrays CA3018A
Text: D Arrays Transistor-continued General-Purpose High-Voltage n -p -n /p -n -p Transistor Arrays CA3096 CA 3096A 3 Independent n-p-n Transistoirs/2 Independent p-n-p Transistors D iffe re n tial am p lifie rs • Level sh ifte rs T h y ris t o r firin g circuits
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ca3096
ca3096a
CS-23846
16-Liad
CA3096>
100/iA,
CA3018,
CA3018A
120MHz
lc-10mA
thyristor firing circuits
RCA 532
PNP Monolithic Transistor Pair
CA3018
rca h 532
rca CA3096
NPN PNP Transistor Arrays
CA3096E
PNP monolithic Transistor Arrays
CA3018A
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PU4120
Abstract: 100-C PU3120 PU3220 PU4220 PU4420 PU4520 Scans-0013919
Text: Power Transistor Arrays PU 3120, P U 4120, P U 4420 PU3120, PU4120, PU4420 • P a c k a g e D im e n s io n s Silicon NPN Triple-Diffused Planar Darlington Type PU3120 P o w e r A m p lifie r, S w itc h in g C o m p le m e n ta ry P a ir w ith P U 3 2 2 0 , P U 4 2 2 0 , P U 4 52 0
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PU3120,
PU4120,
PU4420
PU3220,
PU4220,
PU4520
PU3120:
PU4120
100-C
PU3120
PU3220
PU4220
PU4420
PU4520
Scans-0013919
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PU4111
Abstract: PU4411 PU3110 PU3111 PU3211 PU4110 PU4211 PU4511
Text: Power Transistor Arrays PU3111, PU4111, PU4411 P U 3111, P U 4 1 1 1 , P U 4 4 1 1 P a c k a g e D im e n s io n s P U 3 1 11 Unit: m m Silicon NPN Triple-Diffused Planar Type 4. 2max. 20. 5max. •T S - ¡T 2 £ un P o w e r Am p lifier, S witching C o m p l e m e n ta r y Pair with P U 3 2 1 1 , P U 4 2 1 1 , P Ü 4 5 1 1
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PU3111,
PU4111,
PU4411
PU3211,
PU4211,
PU4511
PU3111:
PU4111
PU4411
PU3110
PU3111
PU3211
PU4110
PU4211
PU4511
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2SA839
Abstract: 2SC1669 2SC166 AC75
Text: 2SA839 S/'J = l > P N P = S f f i t t . * + H £ l>7 > v X ? SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR TENTATIVE O A udio P o w e r A m p lifier A p p lic atio n s O D riv e r S tag e A m p lifier A p p lica tio n s • : V ceo * “ 9 ' 5” 1 ' /4 * 3 .6 ± 0 .2
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2SA839
2SC1669
2SC1669
O-220AB
500mA,
2SA839
2SA839â
2SC166
AC75
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2SA675
Abstract: 2sc1279 2SA685 2N6734 2N6735 2SA749 2SC505 2SC506 2SC507 transistors 2SA749
Text: High Voltage Transistors TYFE NO. fO IA RITY CASE MAXIM UM RATINGS P4 IC VCEO ICM* VCEÄ* mA (V) (mW) 2N6734 2N6735 ZSA637 2SA639 2SA675 P P P P P TO-237A TO-237A TO* IS TO-92B TOW B 2500G 25000 300 200 250 100 2SA685 2SA749 2SC505 2SC306 2SC507 P P N N
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2N6734
O-237A
2500G
2N6735
ZSA637
25A639
O-92B
2SA675
2sc1279
2SA685
2SA749
2SC505
2SC506
2SC507
transistors 2SA749
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2SA1332
Abstract: LC-01A
Text: AOK AOK Semiconductor Product Specification 2SA1332 Silicon PNP P o w e r Transistors D E S C R IP T IO N • W ith T O -22 Q F a package • H ig h V ceo A P P L IC A T IO N S • P o w e r a m p lifie r a p p lic a tio n s • D riv e r s ta g e a m p lifie r a p p lic a tio n s
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2SA1332
O-22C
220Fa)
-50mA
-160V.
LC-01A
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2SD1110
Abstract: 2SB849 2SB849A 2SD1110A
Text: 2 S B 8 4 9 /2 S D 1 1 1 0 ,2 S B 8 4 9 A /2 S D 1 1 1 OA P N P /N P N = M J£ S i& m m n tim m m P N P /N P N S ilicon T rip le D iffused Transistor A udio Frequency P ow er A m p lifie r o t t a t a w r i > < 0 * * 3 5 W ~ 4 0 W ( R l = 8 Q, Single P - P +
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2SB849,
2SD1110,
2SB849A,
2SD1110A
CycIeS50
2SD1110A
2SD1110
2SB849
2SB849A
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2SB82
Abstract: 2SB828 722G ic b82 V05E
Text: Ordering number: EN 722G 2SB828/2SD1064 N0.722G SASiYO P N P /N P N E pitaxial P lanar Silicon Transistors 50V/12A Switching Applications 1 A p p lic a tio n s • Relay drivers, applications. high-speed inverters, converters, and other general high-current
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2SB828/2SD1064
0V/12A
2SB828
2SB82
2SB828
722G
ic b82
V05E
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Untitled
Abstract: No abstract text available
Text: SILICON P TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS ( KTA 965 (Unit in mm APPLICATIONS ) P o w e r A m p lifie r A p p lic a tio n s. D r i v e r S t a g e A m p lifie r A p p lic atio n s. ( »FEATURES ) • C om p lem entary to K T C 2235 • MAXIMUM RATINGS
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75MAX.
80MAX.
60MAX.
92MOD
-10mA,
500mA,
-50mA
-500mA
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PU3116
Abstract: PU3216 PU4116 PU4216 PU4416 PU4516
Text: Power Transistor Arrays PU3116, PU411Ó, PU4416 PU3116, PU4116, PU4416 P a c k a g e D im e n s io n s P U 3116 Silicon NPN Epitaxial Planar Type P o w e r A m p lifie r, S w itc h in g C o m p le m e n ta ry P a ir w ith P U 3 2 1 6 , P U 4 2 1 6 , P U 4 5 1 6
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PU3116,
PU411Ã
PU4416
PU4116,
PU3216,
PU4216,
PU4516
PU3116:
PU3116
PU3216
PU4116
PU4216
PU4416
PU4516
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2SC509
Abstract: 2SA509 2sa509 transistor Produced by Perfect Crystal Device Technology MPC600 5M60 2SC509 Y 4300S
Text: 509 g 2SA 2 5 5 9 / U D ^ P N P Ilf ? ^ ? J W B h > y ^ P C T S Ä ^SILIC O N PNP EPITAXIAL TRANSISTOR (PCT PROCESS) O •* -i y T > O A u d io P o w e r A m p l i f i e r A p p l i c a t i o n s o S w itch in g A p p lic a tio n s INDUSTRIAL APPLICATIONS
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2sa509g
2SC509Â
2SC509
100X100X1MAÃ
2SC509
2SA509
2sa509 transistor
Produced by Perfect Crystal Device Technology
MPC600
5M60
2SC509 Y
4300S
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BDX45
Abstract: No abstract text available
Text: BDX45 BDX46 BDX47 P-N-P SILICON PLANAR DARLINGTON TRANSISTORS S ilico n p-n-p planar D a rlin g to n transistors fo r in d u stria l sw itch in g a p p lica tio ns ei.g. p rin t hamm er, solenoid, relay and lam p d riving. Encapsulated in a T O -126 plastic package w ith c o lle c to r connected
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BDX45
BDX46
BDX47
BDX47
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2SA1263N
Abstract: 2SC3180N 100U 2SA1263
Text: AOK P roduct S p e cifica tio n AOK Semiconductor 2SA1263N Silicon P N P Pow er Transistors D E S C R IP T IO N • W ith T O -3 P l p ackag e • C om plem ent to type 2 S C 3 1 8 0 N • 2 S A 1 2 6 3 with short pin A P P L IC A T IO N S • P ow er am plifier applications
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2SA1263N
2SC3180N
2SA1263
2SA1263N
2SC3180N
100U
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ASY77
Abstract: OC75 GERMANIUM SMALL SIGNAL TRANSISTORS ASY26 ACY34 oc75 oc76 oc77 Germanium power Germanium Power Transistors OC74
Text: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max Cal M in Max , mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15
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ACY33
ACY34
ACY35
ACY36
ACY38
ACY39
ACY40
ACY41
ACY44
ASY26
ASY77
OC75
GERMANIUM SMALL SIGNAL TRANSISTORS
oc75 oc76
oc77
Germanium power
Germanium Power Transistors
OC74
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ph425
Abstract: PN4248 PN4250 N4249 PN4249 PH42 n4250
Text: PN4248, PN4249, PN4250 PNP SILICON AP LOW NOISE SMALL SIGNAL TRANSISTORS P N 4 2 2 4 8 , P N 4 2 4 9 , P N 4 2 5 0 a re P N P silicon CASE T O ' 92A Planartransistors fo r AF low noise p re a m p lifie r applications. EBC ABSOLUTE MAXIMUM RATINGS P.N4248 P.N4250
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PN4248,
PN4249,
PN4250
pn42248,
pn4250
N4248
H4250
PN4249
300mW
ph425
PN4248
N4249
PN4249
PH42
n4250
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