1492-1

Abstract: DS1206 DS1290 DS1291 DS1292 DS1293 DS129X DIP switch
Contextual Info: DS129x DALLAS SEMICONDUCTOR DS129x Eliminator PIN ASSIGNMENT FEATURES • Replaces 8 or 16 hard-to-get-at manual switches GND2 [ 1 24 □ GND3 8 1 24| T [ 2 23 □ VCC T H 2 23Ì Dl [ 3 22 P OA Dl H 3 22| OA OQ c 4 21 d OB OQ Ë4 21a OB OO [ 5 20 □ OC OO

PD4516821G5

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-454AC724 4 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC724 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M SDRAM : /¿PD4516821 are assembled.

15PA90-6W

Abstract: 64AT21-3D MIL-PRF-8805 TL-10632 TS-10013
Contextual Info: 4 F 0 - 5511 2 - A HONEYWELL PART NUMBER 3 2 À . REV DO C U M E N T 14 0012331 C H A N G E D BY KSR CHECK 07APR05 AK 6 4 A T 2 1 S E R IE S C H A R T 2 D — OPPOSITE KEY­ FAA-PMA CATALOG KEYWAY POSITION CENTER POSITION WAY POSITION APPROVED LISTING A ¿ÈS C-NC C -N O C- NO C - N C C-NC C- NO

Contextual Info: IBM21S862 Preliminary IBM21S860 IBM21S861 IBM 1394a 400Mb/s Physical Layer Transceiver PHY Features • Complies with IEEE-1394-1995 [1 ] and the P1394a Supplement, version 2.0 [2], • 400Mb/s max data rate; interoperable with 100 & 200Mb/s devices • Available with one, two, or three ports

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-452AB644 2M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-452AB644 is a 2,097,152 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 16 M SDRAM : ,uPD4516821 are assembled.

Contextual Info: !"#$%&' 123333333333333333333333333333333 QUs !"#$%&'( *+,-./012 !"#$%&'()*+,-./0123 !" #$%&"'()*+,-./0123 !"#$%&' !()*+,-./01 !"#$%&'()*+,-. /01234 !"#$%&'()*+,-. !"#$%& '()*+,-./01 !"#$%& !"#'()*+,-./-0 !"#$%&'()*+ !"#$%,!"#$%&'()*+,-./012034 !"#$ %&'() *+(),-".'/

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-458CA724 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA724 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64 M S D R A M : //PD4564841 are assembled.

MSM51V18165A

Abstract: MSM51V18165
Contextual Info: O K I Semiconductor M SM 51V18165A_ 1,048,576-Ward x 16-Blt DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V18165A is a 1,048¿76-w ord x 16-bit dynam ic RAM fabricated in O KI’s CM OS silicon gate technology. The M SM 51V18165A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CM OS. The M SM 51V18165A is

RL5E821

Contextual Info: RL5E821 - CL Rf [Mohml 1 FCR33.86M2G Udd= 3.3 [U1 Fig.cTd Ta- 20 [d eg] Q- 0 T y p ic a l a. UIH/U1L EU] - - : b. - - inn 2.1 U1H % — UIL -i i i U2H/U2L EU] ivnu cn H U V V 1 •c i I i ini “ *? 1L 1 1 c. F osc [ / ] I 1 .4 .4 - 0- -0

b617

Abstract: b649 b605 transistor b647 B647 b649 transistor transistor b647 bb pressure sensor circuit transistor B633 b63e
Contextual Info: Signal Acquisition and Conditioning With Low Supply Voltages SLAA018 August 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information

MO40

Abstract: A02G FUEGO-218 QR114 LPT02 U409C emcp Movita
Contextual Info: CO CD cn 4^! g o m c_uj? tf *-* 1* t* t ro Ò \ r , .; V^-/p -a*-' • o, *r ' y. CJ — -•> V ô V \\:' O J T f " j C ""\ \ ,.X '. I i: '; : »_ ; ö 7 4 2 3 *v J/0 f*GA &«.»«' C*v. cjue H h — ih wf a u * JXt> cs* O lx C J ii UUU tuF C»tN UVJ o /»

ATS 1144

Contextual Info: MITSUBISHI {DGTL LOGIO 11 De| tSMIöa? ODISSM 8 I a>/ MITSUBISHI ALSTTLs 0 ^ 3 ^ M 74A LS S 21P 7 * y s - / 7 8 -B IT M AG NITU DE COMPARATOR | t'o 's e » """ so'*'6 6 2 4 9 8 2 7 M IT S U B IS H I <DG TL 9 1 D L O G IC DESCRIPTION The M 74ALS521P is a sem iconductor integrated circuit

Contextual Info: MICRON SEMICONDU CT OR INC blllSMT DDOTflQl T7T • PIRN b7E D PRELIMINARY MICRON ■ M T4LC 16270 256Kx 16 WIDE DRAM SEMICONDUCTOR. INC. WIDE DRAM 2 5 6 KX 1 6 DRAM 3.3V EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply*

2N5835

Abstract: 2N5836 M0330 2N5837 210,Motorola MRF5836HX MRF5836HXV VC80 qosmos To-206AF
Contextual Info: MOTOROLA SC XSTRS/R F MfciE b3b?554 D GO^MDTS MOTOROLA -F - 3 SEMICONDUCTOR ä • flOTb 1- 0 / 2N5835 2N5836 2N5837 TECHNICAL DATA The RF Line 2.5 G H z @ 10 m A d c - 2 N 5 8 3 5 2 .0 G H z @ 5 0 m A d c - 2 N 5 8 3 6 1.7 G H z @ 1 0 0 m A dc - 2 N 5 8 3 7

D7118D

Abstract: D5114D
Contextual Info: jf M OTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal D-Type Latch w ith 3 -S ta te O utput M C 74VH C T373A The MC74VHCT373A is an advanced high speed CMOS octal latch with 3-state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while

Contextual Info: MACH 5 CPLD Family BEY O N D PER FO RM AN C E F ifth G e n e r a t i o n M A C H A r c h i t e l i . . ^ FEATURES P u b lic atio n # 2 0 4 4 6 A m e n d m e n t/0 Rev: G Issu e D ate: N o v e m b e r 1 9 9 8 MACH Families ♦ High logic densities and l/Os for increased logic integration

5V68

Abstract: LO301 558880
Contextual Info: Catalog 65701 PC Card Connectors Revised 9-95 Receptacle Assembly, Straddle-Mount, Centered 68 Positions Part Number 146233-1 Material and Finish: Housing -Glass-filled liquid crystal polymer, black Contacts -Beryllium copper; duplex plated 0.00076 [.0000301 minimum gold

Contextual Info: IN T E O R A T E D C IR C U IT S UC1526A UC2526A UC3526A UNITRODE Regulating Pulse Width Modulator FEATURES DESCRIPTION • Reduced Supply Current • Oscillator Frequency to 600kHz • Precision Band-Gap Reference • 7 to 35V Operation • Dual 200mA Source/Sink Outputs

D010

Abstract: D016 MSM51V18160 MSM51V18160A msm5116160a msm5118160a msm51v16160a
Contextual Info: O K I Sem iconductor MSM5 1 V18160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM 51V 18160A is a 1,048,576-w ord x 16-bit D y n a m ic R A M fab ricated in O K I's C M O S silicon g a te tech n ology. T he M SM 51V 18160A ach ieve h igh in tegration, h ig h -sp e e d o p eratio n , an d low -pow er

Contextual Info: 1I S 8 K J F P CY7C1021 YJl xP 1 RiXJjEkw/i^ F ^ _ — 64K x 16 Static RAM BLE is LOW, then data from I/O pins (l/0 1 through l/0 8), is written into the location specified on the address pins (A0 through A i5). If byte high enable (BHE) is LOW, then data from

TO206AB

Abstract: case 60-01
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b 3 b 72 54 0CH250S 5 «flO Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA DM0 Discrete Military Products NPN Silicon Sm all-Signal Transistor M M 4239 Suffixes: HX, H X V /////// Processed per MIL-S-19500/xxx d e s ig n e d for g e n e ra l-p u rp o se sw itc h in g an d am p lifie r ap p lica tion s

Contextual Info: Technical Information OKI Semiconductor MSM5432256/MSM54V32256 Standard-version ( Low voltage version o r V-voraion) 262,144 Words x 32 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416257 is a high speed 256KX32 configuration burst access memory for high performance

Contextual Info: BR93LL46F 6 4 x 1 6 bit serial EEPROM The BR93LL46F is a CMOS serial input/output-type memory circuit EEPROM that can be programmed electrically. It can store up to 1024 bits in 64 sixteen-bit words. Each word can be accessed separately. Dimensions (Units : mm)

TMS44460DJ

Contextual Info: TM124MBK36B, TM124MBK36R1048576 BY 36-BIT TM248NBK36B, TM248NBK36R 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS137E-JANUARY 1991 -REVISEDJUNE 1995 Organization TM124MBK36B . . . 1 048 576 x 36 TM248NBK36B . . . 2 097 152 x 36 Single 5-V Power Supply ±10% Tolerance