8PIN optocoupler 601
Abstract: HCPL 601
Text: 1 Chapter 1. Introduction 1.1 Optoisolator Safety Standards and Regulatory Environment Optoisolator applications often include environments where high voltages are present. The ability of the optoisolator or optocoupler to sustain and to isolate high voltages, both transient as well as
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SO-16
8PIN optocoupler 601
HCPL 601
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NTE3047
Abstract: Optoisolator Triac Driver 7500VAC optoisolator nte3047 Optoisolator triac triggering
Text: NTE3047 Optoisolator TRIAC Driver Output Description: The NTE3047 optoisolator consists of a gallium arsenide infrared emitting diode, optically coupled to a silicon bilateral switch and is designed for applications requiring isolated TRIAC triggering, low
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NTE3047
NTE3047
115VAC
Optoisolator Triac Driver
7500VAC
optoisolator
nte3047 Optoisolator
triac triggering
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IEC 1010-1 General Safety Requirements
Abstract: iec 601.1 optoisolator Optoisolators HP optocoupler optocoupler HP OPTO-ISOLATOR HP opto-isolator
Text: Table of Contents Chapter 1 Introduction 1.1 Optoisolator Safety Standards and Regulatory Environment . 1 1.2 Hewlett-Packard Optoisolator Safety Standards Information . 2
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Photocell
Abstract: ir led datasheet optoisolator olufsen "photocell" 011 ir led bang and olufsen NSL-32 NSL-32-020 bang olufsen
Text: NSL-32-020 Bang & Olufsen / Denmark Optoisolator Features • • • 5.7 min. Compact, moisture resistant package Low LED current Passive resistance output 25.4 min. Photocell 2.54 Anode lead 0.25 x 0.51 LED + Description This optoisolator consists of an LED input optically
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NSL-32-020
Photocell
ir led datasheet
optoisolator
olufsen
"photocell" 011
ir led
bang and olufsen
NSL-32
NSL-32-020
bang olufsen
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nte3095
Abstract: ir led PHOTODIODE
Text: NTE3095 Optoisolator Description: The NTE3095 is a dual photocoupler optoisolator in an 8–Lead DIP type package consisting of a pair of Gallium Aluminum Arsenide light emitting diodes and integrated photodetectors. Separate connections for the photodiode bias and output transistor collectors improve the speed up to a hundred
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NTE3095
NTE3095
ir led PHOTODIODE
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NTE3097
Abstract: Optoisolator Triac Driver
Text: NTE3097 Optoisolator Zero Crossing TRIAC Driver Description: The NTE3097 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing
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NTE3097
NTE3097
240VAC
10sing
Optoisolator Triac Driver
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NTE3090
Abstract: Optoisolator
Text: NTE3090 Optoisolator Schmitt Trigger Output Description: The NTE3090 is an optoisolator in a 6–Lead DIP type package and contains a gallium arsenide IRED optically coupled to a high–speed integrated detector with a Schmitt Trigger output. This device is
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NTE3090
NTE3090
Optoisolator
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NTE3087
Abstract: No abstract text available
Text: NTE3087 Optoisolator High Speed, Open Collector, NAND Gate Output Description: The NTE3087 is an optoisolator which combines a GaAsP LED as the emitter and an integrated high gain multi–stage high speed photodetector. The output of the detector circuit is an open collector,
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NTE3087
NTE3087
2500Vrms
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions
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H11J1-H11J5
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H11M3
Abstract: H11M4 diODE 1k
Text: ÖUALITY TECHNOLOGIES CORP S7E D Optoisolator Specifications. b * i 0 • H11M3, H11M4 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated SCR The HI 1M3 and HI 1M4 contain a gallhim-aluminum-arsenide, infrared emitting diode coupled to a unique high voltage silicon controlled
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H11M3,
H11M4
74bbflSl
H11M3
H11M4
diODE 1k
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Untitled
Abstract: No abstract text available
Text: ÖUALITY TECHNOLOGIES C O R P S7E D 7t*bbfi51 Generic Optoisolator Specifications _ DQQijBgfl i l ? • ÚTV GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor 5 203 2 54 K M N - 15 381 R S m illiw atts m illiam ps am pere
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bbfi51
GEPS2001
EPS2001
50jiA
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4N29-4N33
Abstract: No abstract text available
Text: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E
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4N29A,
4N32A,
E51868
0110b
74bbflSl
4N29-4N33
4N29-4N33
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H11K1
Abstract: H11K
Text: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors
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H11K1,
H11K2
INFRAR000,
H11K1
H11K
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Untitled
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E D • 74hLiB51 GOOMlRb TTb Optoisolator Specifications _ H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor * m il l im e t e r SYMBOL' A B C D «C ü T IK in
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74hLiB51
H11D1-H11D4
1D1-H11D4
E51868
0110b
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moc3020 triac driver
Abstract: MOC302I M0c3020-M0c3023 OPTOISOLATOR TRIAC DRIVER
Text: Optoisolator Specifications M 0c3020-M 0c3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e M O C3020-M CC3023 series consists o f a gallium arsenide, in fra re d em itting diode coupled with a light activated silicon bilateral switch,
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0c3020-M
0c3023
C3020-M
CC3023
MOC3020
MOC302I
MOC3022
MOC3023
moc3020 triac driver
M0c3020-M0c3023
OPTOISOLATOR TRIAC DRIVER
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to
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H11G3
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Untitled
Abstract: No abstract text available
Text: Generic Optoisolator Specifications_ GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor M IN . M AX. .040 .090 085 012 203 2 64 INFRARED E M ITTIN G DIODE 9 53 3.43 6 66 2.92 6.10 milliwatts milliamps ampere
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GEPS2001
GEPS2001
H51868
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340 opto isolator
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode
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74bbflSl
H11J1-H11J5
74bbfl51
0DQ4S11
340 opto isolator
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1AV3A
Abstract: No abstract text available
Text: Ö U AL IT Y TECHNOLOGIES CORP S7E P 74bbfl51 0 0 0 4 1 7 b OOfl • ö T Y Optoisolator Specifications_ H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The HI 1AV series consists o f a gallium arsenide, infrared emitting
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74bbfl51
H11AV1,
H11AV2,
H11AV3,
H11AV1A,
H11AV2A,
H11AV3A
0730-2P.
H11AV2A
1AV3A
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11A1, H11A2, H11A3, H11A4, H11A5 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e HI 1A1 through H11A5 consist o f a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line
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H11A1,
H11A2,
H11A3,
H11A4,
H11A5
H11A5
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1J2H
Abstract: No abstract text available
Text: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e H l 1J series consists o f a gallium a rse n id e in fra re d em itting diode co upled with a light activated silicon bilateral switch, w hich functions
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H11J1-H11J5
1J2H
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Untitled
Abstract: No abstract text available
Text: 3UALITY T E C H N O L O G I E S CORP S7E VMbhflSl OGOMEGfc, b ?S • Ö T V T> Optoisolator Specifications_ H11G45, H11G46 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H 11G series consists o f a gallium arsenide, infrared
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H11G45,
H11G46
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Untitled
Abstract: No abstract text available
Text: ÛUALITY TECHNOLOGIES CORP 57E D Generic Optoisolator Specifications _ 74Lfc>fl51 000432b 344 ÖTY T 'H t- >7 G E3020-G E3023 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e GE3020-GE3023 series consists o f a gallium arsen id e, in fra re d em itting
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74Lfc
000432b
E3020-G
E3023
GE3020-GE3023
GE3020
GE3021
GE3022
GE3023
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specificatio ns_ H11B1, H11B2, H11B3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier M ILL IM E T E R S M IN . 406 1-01 2 28 3 1• {TO P V IE W I IN FR A R E D EM ITTING DIODE
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H11B1,
H11B2,
H11B3
H11B2
H11B3
0110b
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