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    H11M4

    Abstract: No abstract text available
    Text: 1 of 4 Hutton Close, Crowther Ind Est, Dist 3, Washington, Tyne & Wear NE38 0AH, England Email: isocom@dial.pipex.com - Tel: +44 0191 4166546 - Fax: +44 0191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers


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    PDF H11M3, H11M4 H11M4-H11M6 H11M3 10kohm 27kohm

    H11M4

    Abstract: H11M3
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Circuit Features Description Absolute Maximum Ratings Electrical Characteristics Similar Optocouplers Home Page


    Original
    PDF H11M3, H11M4 H11M4-H11M6 10kohm H11M3

    4n39

    Abstract: mcs2400
    Text: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Photo SCRs Single Channel DIP Optocouplers Catalogue Home Page Optically-Coupled Pair with IR LED Emitter and Light Activated Silicon Controlled Rectifier


    Original
    PDF MCS2400 IS605: 27kohm 10kohm, H11C4 H11C5 H11C6 CNY30 CNY34 4n39

    H11M3

    Abstract: H11M4
    Text: Optoisolator Specifications H11M3, H11M4 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated SCR T h e H I 1M3 an d H I 1M4 contain agallium -alum inum -arsenide, in frared em ittin g diode co upled to a u n iq u e h ig h voltage silicon co n tro lle d


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    PDF H11M3, H11M4 H11M3 H11M4

    H11M3

    Abstract: H11M4 diODE 1k
    Text: ÖUALITY TECHNOLOGIES CORP S7E D Optoisolator Specifications. b * i 0 • H11M3, H11M4 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated SCR The HI 1M3 and HI 1M4 contain a gallhim-aluminum-arsenide, infrared emitting diode coupled to a unique high voltage silicon controlled


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    PDF H11M3, H11M4 74bbflSl H11M3 H11M4 diODE 1k

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID 0 1 E 1 97 54 STATE Optoelectronic Specifications- HARRI S SEMICOND SECTOR 37E S 4302271 I HAS 002721b r - m Photon Coupled Isolator H11M3, H11M4 -O 6 G a Al As In frared E m itting D iode & Light A ctivated S C R £ .


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    PDF 002721b H11M3, H11M4 92CS-42662 92CS-429S1

    MOC5010

    Abstract: MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143
    Text: - Quick-Reference Product Guide Industry Replacement Guide T h e su g g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts f o r th e p ro d u c ts listed. H a rris a ssu m e s n o re sp o n sibility a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t


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    PDF 1N6264 1N6265 1N6266 4N25A 4N29A 4N32A 4N38A L14C2 MOC5010 MOC7811 TIL31A TIL34A TIL903-1 OP8815 SCS11C3 h2181 TIL99 TIL143

    H11M1

    Abstract: H11M2 MQC3022 H11M4 GE3010 GE3021 h11m 4000V GE3022 THOMSON 58E
    Text: TH On SON / D I S T R I B U T O R 5BE D • TD5bfl73 0 0 0 5 7 5 0 3TT ■ TCSK Optoelectronic Products Optoisolators/Optocouplers Continued D escription Surge Isolation Voltage V io (RMS) Ip T rigger Max Blocking Voltage (Min) Typical TON (fis) V F (Max)


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    PDF TD5bfl73 H11C1 H11C2 H11C3 H11C4 H11C5 H11C6 H11M1 H11M2 H11M3 H11M1 H11M2 MQC3022 H11M4 GE3010 GE3021 h11m 4000V GE3022 THOMSON 58E

    TIL145

    Abstract: ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A
    Text: Quick-Reference Product Guide Industry Replacement Guide T h e sug g ested r e p la c e m e n ts re p re s e n t w h a t is b e lie v e d to b e e q u iv a le n ts fo r th e p ro d u c ts listed. H a r r is assum es n o re sp o n s ib ilit v a n d d o e s n o t g u a ra n te e th a t th e re p la c e m e n ts a re exact, b u t


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    PDF 1N6264 1N6265 1N6266 H21A1 H21B1 H22A2 TIL145 ge h11a TIL31A TIL33A MOC7811 TIL81 TIL99 TIL903-2 C3012 TIL34A

    h11m

    Abstract: H11M4
    Text: O p to ls o la t o r S p e c ific a tio n s H 11M 3, H 11M 4 Optoisolator GaAIAs Infrared Emitting Diode and Light Activated SCR T h e H I 1M3 a n d H ! 1M4 contain a gallium -alum inum -arsenide, in frared em ittin g d io d e co upled to a u n iq u e high voltage silicon co n tro lle d


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    PDF H11M3, H11M4 h11m H11M4

    CNY17 III

    Abstract: H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47
    Text: Quick-Reference Product Guide _ HARRIS OPTOELECTRONIC Devices Index to Types Type No. 4 Page No. Type No. Page No. Type No. Page No. Type No. Page No. IN6264 IN6265 IN6266 4N25 4N25A 4N26 4N27 4N28 4N29 4N29A 166 166 168 196 196 196


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    PDF IN6264 IN6265 IN6266 4N25A 4N29A 4N32A 4N38A BPW36 BPW37 BPW38 CNY17 III H11M1 H11M4 SL5504 H21B5 CNX35 GE3022 l14g1-l14g2-l14g3 CNY47