GSHS-1625
Abstract: GSHS-1625G gshs Raychem BPTM GSHS-1635F GSHS-3635W 175k raychem mwtm RT3 RAYCHEM wcsm
Text: HEAT SHRINK PRODUCTS C r os s R efer enc e G ui de Qualtek Part Number QBM QBT QSTV Q2-Z Q5-2X Q5-3000 Q5-3X Q5-F3X Q5-4X Q5-F4X Q5-4XR QFRA3 QDWT QSEC QRA2 QFRA3 Q5-3XM Q-175K Q5-3XM QRA2 Q2-F2XYG Q2-F3X Q5-4XR Q2-R Q-150K Q-200E Qualtek Part Number Q2-F
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Q5-3000
Q-175K
Q-150K
Q-200E
CP-221
EPS-200
EPS300
GSHS-1625
GSHS-1625G
gshs
Raychem BPTM
GSHS-1635F
GSHS-3635W
175k
raychem mwtm
RT3 RAYCHEM
wcsm
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IRFF223
Abstract: IRFF222 IRFF220 IRFF221
Text: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m
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IRFF220,
IRFF221,
IRFF222,
IRFF223
1RFF221,
IRFF222
IRFF223
IRFF220
IRFF221
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smd marking code BS sot-23 infineon
Abstract: No abstract text available
Text: BSS 83P Infineon f*chnologj*4 Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel Drain source voltage '/os • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS oni 2 -0.33
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OT-23
Q67041-S1416
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
smd marking code BS sot-23 infineon
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UM110S
Abstract: UM1111 UM1117 UM1101 UM1102 UM1103 UM1104 UM1107 UM1108 UM1124
Text: UNIVERSAL MICRO EL EC TR ONI C 2=iE D • ÜQQ0052 2 ■ ^'S7~U OUTPUT SPECIFICATIONS Voltage Accuracy Single Output — . . Dual + Output . - Output. Triple 5 V . 12V/15V. - 5 V . Voltage Balance, Dual output at Full load
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8-36V
6-72V
Singl30
UM1127
UM1128
UM110S
UM1111
UM1117
UM1101
UM1102
UM1103
UM1104
UM1107
UM1108
UM1124
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IRFS740
Abstract: IRFS741 uA 741 NC K 741 MOSFET
Text: N-CHANNEL POWER MOSFETS IRFS740/741 FEATURES • Lower R ds<oni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended sale operating area • Improved high temperature reliability
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IRFS740/741
IRFS740
IRFS741
to-220f
7Tb4142
00EA3E0
uA 741 NC
K 741 MOSFET
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Untitled
Abstract: No abstract text available
Text: •'.ONI HTLS LTD ES 3?hûS01 DOOÜGTl S 16ML PLESSEY T-3>- A5" Three Five Product Information GaAs Dual Gate MESFET P 35-1310 The versatile dual gate MESFET has been designed for improved performance and is ideally suited for: Applications • Automatic gain control
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uc 3882
Abstract: KA 3882 ic 3882
Text: UCC2882 _ U IM IT R O D E UCC3882 PRELIMINARY Average Current Mode Synchronous Controller With 5-Bit DAC FEATURES DESCRIPTION • T he U C C 3882 com bines high precision reference and voltage m oni toring circu itry w ith average cu rre n t m ode PW M synchronous rectifi
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UCC2882
UCC3882
700kH
uc 3882
KA 3882
ic 3882
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Untitled
Abstract: No abstract text available
Text: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4306G IS S U E 3 - O C TO BER 1995_ FE A T U R E S * Very low RDs oni = -33£2 A PPLICA TIO N S * DC - DC Converters * Solenoids/Relay D rivers for Autom otive PARTM ARKIN G D ETA IL -
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OT223
ZVN4306G
ZVN4306
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74ls44
Abstract: No abstract text available
Text: PANASONIC INDL/ELEK ÎICJ 72 69 32 # 52 DE I [^35055 □ DG7Hbli Q P AN AS ONI C I N D L * E L E C T R O N I C f' 72C 07266 LS TTL DN74LS5>U—X DN74LS445/DN74LS445S DN74LS445 DN74LS445S BCD to Decimal Decoders/Drivers • m s D N 74LS445/SI±, * - 7 “ V 3 U 7
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0DD72t
DN74LS5
DN74LS445/DN74LS445S
74LS445/DN
74LS445S
DN74LS445/SIÃ
35m\v
74ls44
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1207A
Abstract: lcd 3901
Text: A ugust 1996 t o r LM1205A/LM1207A 130 MHz/85 MHz RGB Video Amplifier System with Blanking The LM 1205A/LM 1207A is a very high frequency video am plifier system intended fo r use in high resolution RGB m oni tor applications. In addition to the three m atched video am
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LM1205A/LM1207A
LM1205A/LM1207A
Hz/85
205A/LM
1207A
lcd 3901
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10t45
Abstract: 10t60 10T50 10T500 10T70 10td100 10N25V 10TD1000 10T100 10T90
Text: E S C E L E C T R ONI C S CORP =13 DE d e I 3Ü 37BS7 OGODBTM S | _ _ DIGITAL DELAY LINES 1 4 PIN PACKAGE • TTL AND DTLéCOMPATIBLE ' ' '' ID TAPS * S E R IE S lOTAND IQtD MACHINE INSERTABUE LOW PROFILE DIP Also availab le in Low Power Schottky - Series 1 0 L Î or 10LTD
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37BS7
10LTD
10TXX
10T50
10TD50
10T60
10TD60
10T70
10TD70
10TD80
10t45
10T500
10td100
10N25V
10TD1000
10T100
10T90
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AX 1668 F
Abstract: MN1613 04 6844 MN1600 FAGS MN1668 ST T4 0580
Text: PANASONIC INDL/ELEK 6932852 P ANAS ONI C Î>F| biBEäSE DDDSTflfl S 72 IN O L,ELECTRO N IC 72C T-52 D 05988 MN 1668 v > -T " ? c n y £ = L - 5 > m j M N1668 ~F 68 9 / B us Exchange Adapter • M N1668 A ' ^ a f 7 -r li, í S ^ - S E B E l / P i n A s s ig n m e n t
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N1668
N1610,
N1668
0--A15
MN1668
0--A10
MN1668-MC6844-M68
ci32fl52
T-52-33
AX 1668 F
MN1613
04 6844
MN1600
FAGS
ST T4 0580
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oni 350
Abstract: ZFW MARKING JN2FS T700238 2FCF SJ-1003 SJ100301 marking zfw
Text: %J1 B DATE JK f t REV. 8 2 5 5 0 l PS DCN m & W. f t « D E S C R IP T IO N NO. M s m A PPD . a üé CHK. DR. * M A PPD . 'ON ONI MVÜQ W HITE MARKING AS NOTE!. CONTACTS ARE SOLD SEPARATELY. THE APPLICABLE CONTACTS ARE LISTED IN THE TABLE-1. 2. THE PART NUMBER SHALL SPECIFY THE AVAILABILITY OF THE BUSHING, AND THE APPLICABLE CABLE SIZE.
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350-D02-2.
oni 350
ZFW MARKING
JN2FS
T700238
2FCF
SJ-1003
SJ100301
marking zfw
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642J
Abstract: 6N137 NEC photo coupler
Text: N E C ELECTRONICS 6427525 N E C I NC 73 DE P b 4 S 7 S E S 0 0 a EJ E43 EL EC TR ONI CS , INC ¡ NEC NEC Electronics Inc. 72C ¿ 9 2 4 3 T-HÌ-Z3 D 6N137 HIGH S PEED PH OTO CO U P LER • N E P O C SERIES D e s c rip tio n F e a tu re s The 6N137 is a high speed photo coupler containing a
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D0cia43
6N137
6N137
350fl
642J
NEC photo coupler
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IRFF330
Abstract: IRFF333 STL300
Text: M O T O RO LA SC XSTRS/R F i 2 E D | b3b?2S4 00âb7üb M | IRFF330 IRFF333 CASE 79-05, STYLE 6 TO-39 TO-205AF M A X I M U M R A T IN G S Sym bol Rating IRFF330 IRFF333 Unft Drain-Source Voltage VDSS 400 350 Vdc Drain-Gate Voltage (Rq s = 1.0 mil) V d GR
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IRFF330
IRFF333
IRFF333
O-205AF)
STL300
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Untitled
Abstract: No abstract text available
Text: 1CT I 1CT lOOOpF, 2KV N DT E S ELECTRICAL SPECIFICATIONS: 1,0 P I N S VITHDUT ELECTRICAL CONNECTION ARE DMITTED, 1.0 TURNS RATIO: P 3 - P 5 - P 4 : ( J 6 - J3 ) (P 7 - P 6 - P 8 ) : ( J 2 - J1 ) 1CT : 1CT± 3% 1CT : 1CT ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 100KHz, 8mA DC Bias
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350uH
100KHz,
CT720034X1
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Untitled
Abstract: No abstract text available
Text: ^ Supertax inc. DN2535 DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Orderina Informât on b v dsx/ R d S ON b v dgx (max) Order Number / Package loss (min) TO-39 TO-92 TO-220 TO-243AA* DIE — DN2535ND DN2540N8 DN2540ND 350V 25£i 150mA DN2535N2 DN2535N3
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DN2535
DN2540
O-220
O-243AA*
DN2535ND
DN2540N8
DN2540ND
150mA
DN2535N2
DN2535N3
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oni 350 photo
Abstract: No abstract text available
Text: TN 06D LJ Supertex me. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON) I d (ON) ^G S (th ) Order Number / Package (max) (min) (max) TO-92 DICE* 350V 10Q 1.0A 1.8V TN0635N3 TN0635ND 400V 10 fi 1.0A 1.8 V TN0640N3
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TN0635N3
TN0640N3
TN0635ND
TN0640ND
TN06D
oni 350 photo
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DS10N
Abstract: No abstract text available
Text: V P 05D t ìì Supertex. inc. /p \ P-Channel Enhancement-Mode ^ Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number 1Package f II bC ^DS O N TO-39 TO-92 DICE+ -350V (max) 75n -200mA VP0535N2 VP0535N3 VP0535ND -400V 75a -200mA
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-350V
-400V
VP0535N2
VP0540N2
VP0535N3
VP0540N3
VP0535ND
VP0540ND
-200mA
-200mA
DS10N
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oni 350
Abstract: No abstract text available
Text: HM514410JP/ZP-8/10/12 — Preliminary 1,048,576-Word x 4-Bit D ynam ic Random A c c e s s M em ory • DESCRIPTIO N The Hitachi HM514410 is a C M O S dynamic RAM organized 1,048,576 word x 4 bit. HM514410 has realized higher density, higher performance and various functions by employing 0.8 ^m
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HM514410JP/ZP-8/10/12
576-Word
HM514410
20-pin
oni 350
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0S121
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications. It has
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BUK553-48C
-T0220AB
0S121
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MN1613
Abstract: T8W sd MN1610 CSRQ 16-Blt floppy drive emulator BS05 LA-F13 t28h TL4W
Text: PANASONIC INDL/ELEK "{IC} 7E 693 2 8 5 2 PANASONIC I N D L *ELECTRONIC W C 7 Q D > ^ - 5 ? 16-Bit De | ^ 3 5 6 5 5 72C □ D 0 5 cm 7 5 f~ D 05947 MN1613 T-49-17-16 MN1 6 1 3 ¡S*l6 High-Speed 16-B it Single-Chip Microprocessor (Single Voltage Supply) m
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16-Bit)
MN1613
T-49-17-16
16-Bit
MN1613
MN1610
MN1610Â
T8W sd
MN1610
CSRQ
16-Blt
floppy drive emulator
BS05
LA-F13
t28h
TL4W
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CR diode transient
Abstract: 4065AN sml3565an SML3580AN
Text: SEflELAB PLC bGE D 0133187 □□G07SG m i ISMLB lili SEME SML4065AN SML3565AN SML4080AN SML3580AN LAB 400V 10.0A 0.6512 350V 10.0A 0.6512 400V 9.0A 0.8012 350V 9.0A 0.80Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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G07SG
SML4065AN
SML3565AN
SML4080AN
SML3580AN
3580AN
4065AN
3565AN
4080AN
100mS
CR diode transient
SML3580AN
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oni 350
Abstract: No abstract text available
Text: Power MOSFET r:C E-pack SMD V X -II series TO-220 ÿ U / " STO-220 (SMD) ITO-3P MTO-3P MTO-3L N-Channel. Enhancement type Electrical Characteristics Absolute Maximum Ratings toff (typ) V gss Id Pt (max) r c ] [V ] [V ] [A ] [W ] [O ] [pF] [pF] [ns] [ns]
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O-220
STO-220
O-220
STO-220
FTO-220
oni 350
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