Untitled
Abstract: No abstract text available
Text: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one
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MIXA600AF650TSF
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Untitled
Abstract: No abstract text available
Text: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one
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MIXA600CF650TSF
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Untitled
Abstract: No abstract text available
Text: MIXA600AF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common emitter + free wheeling diodes Part number MIXA600AF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one
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MIXA600AF650TSF
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MIXA600PF650TSF
Abstract: No abstract text available
Text: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one
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MIXA600PF650TSF
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MIXA600PF650TSF
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Untitled
Abstract: No abstract text available
Text: MIXA600CF650TSF tentative XPT IGBT Module VCES = 650 V I C25 = 2x 720 A VCE sat = 1.65 V Common collector + free wheeling diodes Part number MIXA600CF650TSF Backside: isolated Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one
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MIXA600CF650TSF
Air-00
60747and
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Untitled
Abstract: No abstract text available
Text: MIXA600PF650TSF tentative XPT IGBT Module VCES = 2x 650 V I C25 = 720 A VCE sat = 1.65 V Phase leg + free wheeling Diodes + NTC Part number MIXA600PF650TSF Backside: isolated 5 2 1 8 7 4 3 6 9 10/11 Features / Advantages: Applications: Package: SimBus F ● High level of integration - only one
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon High-Voltage Transistors BF 721 BF 723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN
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Q62702-F1239
Q62702-F1309
OT-223
flE35b05
D1E17DD
EHP0055Ã
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52s marking code transistor
Abstract: 52s marking code 52s marking 2SK3633 SC-65
Text: 2SK3633 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3633 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 5.2S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3633
52s marking code transistor
52s marking code
52s marking
2SK3633
SC-65
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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MPC7450
Abstract: XPC7450RX600PD XPC7450RX667PD XPC7450RX733PD
Text: Freescale Semiconductor, Inc. Advance Information MPC7450RXPXPNS/D Rev. 0, 11/2001 Freescale Semiconductor, Inc. MPC7450 Part Number Specification for the XPC7450RXnnnPx Series Motorola Part Numbers Affected: XPC7450RX600PD XPC7450RX667PD XPC7450RX733PD
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MPC7450RXPXPNS/D
MPC7450
XPC7450RXnnnPx
XPC7450RX600PD
XPC7450RX667PD
XPC7450RX733PD
MPC7450EC/D)
XPC7450RX600PD
XPC7450RX667PD
XPC7450RX733PD
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k3798
Abstract: No abstract text available
Text: 2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3798 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3798
k3798
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K3566 transistor
Abstract: K3566 2SK3566 transistor k3566 K3566 data k356
Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3566
K3566 transistor
K3566
2SK3566
transistor k3566
K3566 data
k356
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k3799
Abstract: No abstract text available
Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 720 V)
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2SK3799
k3799
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transistor K3565
Abstract: K3565 transistor K3565 data k3565 2sk3565
Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3565
transistor K3565
K3565 transistor
K3565 data
k3565
2sk3565
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toshiba k3700
Abstract: 2SK3700
Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 720 V)
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2SK3700
900HIBA
toshiba k3700
2SK3700
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transistor K3564
Abstract: K3564 K3564 toshiba
Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3564
transistor K3564
K3564
K3564 toshiba
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k3799
Abstract: No abstract text available
Text: 2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK3799 Switching Regulator Applications Unit: mm z Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0 S (typ.) z Low leakage current: IDSS = 100 A (max) (VDS = 720 V)
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2SK3799
k3799
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wifi schematic
Abstract: LTE Tx BAW filter band 40 CSP-5CT 885033-EVB LTE bandpass filter LTE filter band 40 wifi antenna schematic Wifi code 885033 Coexistence
Text: 885033 2.4GHz WLAN/BT LTE Co-Existence Filter Applications • • • • • • • WiFi bandpass filter that enables the coexistence of 4G WiMAX/LTE/TD-LTE & WiFi signals Handsets Portable Hotspots Mobile Routers Smart Meters High-power WLAN Access Points
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B38/B40
wifi schematic
LTE Tx BAW filter band 40
CSP-5CT
885033-EVB
LTE bandpass filter
LTE filter band 40
wifi antenna schematic
Wifi code
885033
Coexistence
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marking code motorola ic
Abstract: MOTOROLA IC PLL OF IC 733 XPC7450RX733PD dd marking B650 MPC7450 XPC7450RX600PD XPC7450RX667PD
Text: Freescale Semiconductor, Inc. Advance Information MPC7450RXPXPNS/D Rev. 0, 11/2001 MPC7450 Part Number Specification for the XPC7450RXnnnPx Series Freescale Semiconductor, Inc. C IN Motorola Part Numbers Affected: XPC7450RX600PD XPC7450RX667PD XPC7450RX733PD
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MPC7450RXPXPNS/D
MPC7450
XPC7450RXnnnPx
XPC7450RX600PD
XPC7450RX667PD
XPC7450RX733PD
MPC7450EC/D)
marking code motorola ic
MOTOROLA IC PLL
OF IC 733
XPC7450RX733PD
dd marking
B650
XPC7450RX600PD
XPC7450RX667PD
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K3566 transistor
Abstract: K3566 transistor k3566 K3566 data transistor 2sk3566 2SK3566
Text: 2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3566 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3566
K3566 transistor
K3566
transistor k3566
K3566 data
transistor 2sk3566
2SK3566
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K3565 transistor
Abstract: transistor K3565 K3565 data k3565 Toshiba 2SK3565 2SK3565
Text: 2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3565 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.0Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3565
K3565 transistor
transistor K3565
K3565 data
k3565
Toshiba 2SK3565
2SK3565
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toshiba k3700
Abstract: 2SK3700 K3700 2SK37 VDD400 k370
Text: 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅣ 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 720 V)
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2SK3700
toshiba k3700
2SK3700
K3700
2SK37
VDD400
k370
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transistor K3564
Abstract: K3564 k3564 transistor transistor K3564 5 a K3564 toshiba 2SK3564
Text: 2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3564 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3564
transistor K3564
K3564
k3564 transistor
transistor K3564 5 a
K3564 toshiba
2SK3564
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K3473
Abstract: TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473
Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)
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2SK3473
K3473
TOSHIBA K3473
toshiba transistor k3473
2SK3473
SC-65
transistor k3473
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