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    ON SEMICONDUCTOR N51 Search Results

    ON SEMICONDUCTOR N51 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ON SEMICONDUCTOR N51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2511NZ FDW2511NZ

    n mosfet pspice parameters

    Abstract: FDW2512NZ 2512nz
    Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2512NZ FDW2512NZ n mosfet pspice parameters 2512nz

    2601NZ

    Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3
    Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2601NZ 2601NZ 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3

    5e8 marking

    Abstract: 66E-3
    Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2601NZ FDW2601NZ 5e8 marking 66E-3

    Untitled

    Abstract: No abstract text available
    Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2512NZ FDW2512NZ

    Untitled

    Abstract: No abstract text available
    Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2512NZ FDW2512NZ

    2511NZ

    Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
    Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2511NZ FDW2511NZ 2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10

    2601NZ

    Abstract: FDW2601NZ 2601N
    Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2601NZ FDW2601NZ 2601NZ 2601N

    Untitled

    Abstract: No abstract text available
    Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2511NZ FDW2511NZ

    FDW2512NZ

    Abstract: KP198
    Text: May 2008 FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2512NZ FDW2512NZ KP198

    FDW2601NZ

    Abstract: N-Channel 2.5V 2601NZ
    Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2601NZ FDW2601NZ N-Channel 2.5V 2601NZ

    C7 MARKING Fairchild

    Abstract: No abstract text available
    Text: FDM3622 N-Channel PowerTrench MOSFET tm 100V, 4.4A, 60m: General Description Features r DS ON = 44m: (Typ.), VGS = 10V, ID = 4.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDM3622 C7 MARKING Fairchild

    2511NZ

    Abstract: m068 BV150 FDW2511NZ n10 diode 51E3 KP17 Diode N7 S2
    Text: May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2511NZ FDW2511NZ 2511NZ m068 BV150 n10 diode 51E3 KP17 Diode N7 S2

    FDM3622

    Abstract: TRS250
    Text: FDM3622 N-Channel PowerTrench MOSFET 100V, 4.4A, 60mΩ General Description Features r DS ON = 44mΩ (Typ.), VGS = 10V, ID = 4.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDM3622 FDM3622 TRS250

    Untitled

    Abstract: No abstract text available
    Text: May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features  7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2511NZ FDW2511NZ

    R36W

    Abstract: k1420 N52C N38C l46r k0114 N53C transistor k1117 k2225 transistor transistors k2628
    Text: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with enough circuit schematic and SPICE parameter information


    Original     		PDF AND8009/D r14525 AND8009/D R36W k1420 N52C N38C l46r k0114 N53C transistor k1117 k2225 transistor transistors k2628

    k2324

    Abstract: k1821 k2225 k1317 power transistor k1821 k1213 k1117 k0313 k2225 transistor N13R
    Text: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by: Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Schematic Information The kit contains representative input and output schematics, netlists, and waveform used for the ECLinPS


    Original     		PDF AND8009/D C0203 K0204 K0204WB L01WB L02WB L03WB k2324 k1821 k2225 k1317 power transistor k1821 k1213 k1117 k0313 k2225 transistor N13R

    n20 n21 fet

    Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
    Text: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital


    Original     		PDF FDG6318PZ 1200m SC-70-6 n20 n21 fet 53E1 FDG6318PZ SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4

    k1117

    Abstract: R36W power transistor k1821 L46R k1518 k1117 transistor k2225 transistor k2225 k1317 transistor k1317
    Text: AND8009/D ECLinPS Plus SPICE Modeling Kit Prepared by: Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Schematic Information The kit contains representative input and output schematics, netlists, and waveform used for the ECLinPS


    Original     		PDF AND8009/D k1117 R36W power transistor k1821 L46R k1518 k1117 transistor k2225 transistor k2225 k1317 transistor k1317

    Untitled

    Abstract: No abstract text available
    Text: HUF75545P3, HUF75545S3S Semiconductor June 1999 Data Sheet File Num ber 4738.1 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN FLANGE • Ultra Low On-Resistance • rDS(ON) = 0.01 O il,


    OCR Scan     		PDF HUF75545P3, HUF75545S3S O-220AB O-263AB HUF75545P3 75545P

    75329d

    Abstract: TA75329 HUF75329D3
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S TA7532HERM2 98e-2 57e-2 13e-1 26e-2 HUF75329D 80e-3 00e-2 75329d TA75329 HUF75329D3

    75307D

    Abstract: No abstract text available
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet March 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307 75307D

    Untitled

    Abstract: No abstract text available
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Semiconductor Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 58e-2 HUF75332 00e-3 50e-3 85e-2

    TL 431 model SPICE

    Abstract: Simulation Model tl 431
    Text: HUF75309P3, HUF75309D3, HUF75309D3S Semiconductor June 1999 Data Sheet 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75309P3, HUF75309D3, HUF75309D3S HUF75309 TL 431 model SPICE Simulation Model tl 431