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    FDW2601NZ Price and Stock

    onsemi FDW2601NZ

    MOSFET 2N-CH 30V 8.2A 8TSSOP
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    Fairchild Semiconductor Corporation FDW2601NZ

    Power Field-Effect Transistor, 8.2A, 30V, 0.015ohm, 2-Element, N-Channel, MOSFET '
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    Rochester Electronics FDW2601NZ 26 1
    • 1 $0.4323
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    • 100 $0.4064
    • 1000 $0.3675
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    FDW2601NZ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDW2601NZ Fairchild Semiconductor 30V Dual N-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDW2601NZ Fairchild Semiconductor Dual N-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDW2601NZ Fairchild Semiconductor Dual N-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDW2601NZ_NL Fairchild Semiconductor 30V Dual N-Channel 2.5V Specified PowerTrench MOSFET Original PDF

    FDW2601NZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2601NZ

    Abstract: FDW2601NZ 2601N
    Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2601NZ FDW2601NZ 2601NZ 2601N

    FDW2601NZ

    Abstract: N-Channel 2.5V 2601NZ
    Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2601NZ FDW2601NZ N-Channel 2.5V 2601NZ

    2601NZ

    Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3
    Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2601NZ 2601NZ 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3

    5e8 marking

    Abstract: 66E-3
    Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2601NZ FDW2601NZ 5e8 marking 66E-3

    Untitled

    Abstract: No abstract text available
    Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features  8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance


    Original     		PDF FDW2601NZ FDW2601NZ