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    Untitled

    Abstract: No abstract text available
    Text: Inleiding MODEL Aansluitingen GEBRUIKSAANWIJZING Installatie XG-C430X XG-C335X XG-C330X Snelstartgids LCD-PROJECTOR Basisbediening Handige voorzieningen Aanhangsel BELANGRIJK • Noteer hier de model- en serienummers, die staan aangegeven het achterpaneel van de projector. Deze


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    PDF XG-C430X XG-C335X XG-C330X

    3TK2841

    Abstract: IEC 439-1 3ZX1012-0TK28-1JA1 pulsador DC-13 "Y35" siemens led
    Text: Sicherheitskombination 3TK2841 IEC 60 439-1 1999 Betriebsanleitung Warnung: Gefährliche elektrische Spannung! Kann zu elektrischem Schlag und Verbrennungen führen. Vor Beginn der Arbeiten Anlage und Gerät spannungsfrei schalten. Unter Berücksichtigung der Umgebungsbedingungen müssen die Geräte


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    PDF 3TK2841 3ZX1012-0TK28-1JA1 3TK2841 IEC 439-1 3ZX1012-0TK28-1JA1 pulsador DC-13 "Y35" siemens led

    CY7C4245

    Abstract: No abstract text available
    Text: fax id: 5715 Interfacing to RACEway: PitCREWjr Figure 1. The PitCREWjr has no programmable internal registers. Internal PitCREWjr state machines assemble and disassemble the route, address, and data long words embedded in the RACEway protocol. RACEway mastering is accomplished by controlling a single input signal. Figure 2 shows the


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    Y6930T

    Abstract: Y6971T Y6972T B4535 Y6932T SM B4535 B4536 gigaset ZF-filter
    Text: Klaus Ruffing Schnurlose ISDN-Anbindung: OFW-Filter als Schlüsselkomponenten für DECT DECT-Schnurloskonzepte der 2. Generation, das künftige Dual-Mode-System DECT-GSM und viele andere fortschrittliche Applikationen im Mobilfunk sind typische Einsatzgebiete für Oberflächenwellenfilter von S+M.


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    PDF DIP18D Y6930T Y6971T Y6972T B4535 Y6932T SM B4535 B4536 gigaset ZF-filter

    pierce oscillator

    Abstract: epcos 868.3mhz
    Text: Application Note SAW-Components Fundamentals of a SAWR stabilised Pierce oscillator. Schematic and PCB layout for a SAWR stabilised oscillator working at 915MHz and at 868.3MHz. App. Note #21 Author: Updated: Version: Department: Alexander Glas February 9, 1999


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    PDF 915MHz D-81617 400MHZ. 1000MHz paras0805 SIMID02 R2709 pierce oscillator epcos 868.3mhz

    fifo

    Abstract: ofwe CY7C384A addr RDCO CY7C4245 RT 8214 RT 8206 tag 8206
    Text: Interfacing to RACEway: PitCREWjr D Used to interface between FIFOs and the General RACEway protocol. D Drives/receives a RACEway port directly. D Simple PitCREWjr is a simple fullĆduplex onĆramp to the RACEway fabric. The device has a standard RACEĆ master


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    PDF CY7C384A, fifo ofwe CY7C384A addr RDCO CY7C4245 RT 8214 RT 8206 tag 8206

    434m

    Abstract: siemens matsushita saw 45 SAW-Filter B3550 Siemens ofw filter saw Siemens matsua
    Text: Siemens Matsushita Components Matching of the B3550 and optimising the crosstalk by evaluating a good RF layout App. Note #4 Author: Updated: Department: Alexander Glas June 26, 1998 S+M OFW-EU-AS Siemens Matsushita Components SAW Components Application: Matching and optimised PCB for B3550


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    PDF B3550 B3550 434MHz. B355X 434m siemens matsushita saw 45 SAW-Filter Siemens ofw filter saw Siemens matsua

    CT8281

    Abstract: CT10
    Text: 2 MEG X 6 FLASH Dense-PacJdicrosystem s, Inc. 0 DPZ2MX8J3 EEPROM "J" LEADED STACK MODULE PRELIMINARY DESCRIPTION: The DPZ2MX8J3 "STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC


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    PDF 120ns 150ns 170ns 200ns 250ns 30aobsoo CT8281 CT10

    Untitled

    Abstract: No abstract text available
    Text: '! 93 D P Z 1 2 8 X 1 6 A 3 o _ 128K x 16 FLASH EEPROM DENSE-STACK M O D U LE PRELIMINARY DESCRIPTION: The DPZ128X16A3 "DENSE-STACK" module is a revolutionary new mem ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Leadless Chip Carriers SLCC) mounted on a co-fired


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    PDF DPZ128X16A3 DPZ128X16A3 120ns 125-C 150ns 3OA07643

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMD£I AmMCLOOXA 2 or 4 Megabyte 3.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2 or 4 MBytes of addressable Flash memory ■ ■ 2.7 V to 3.6 V, single power supply operation ■ ■ ■ — True interchangeability — Write and read voltage: 3.0 V -10/+20%


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    PDF 60-pad

    3UA12

    Abstract: No abstract text available
    Text: DENSE-PAC 64 Megabit FLASH EEPROM DPZ2MW32NV3 M I C R O S Y S T E M S DESCRIPTION: The D P Z 2 M W 3 2 N V 3 "V E R S A -S T A C K " m o d u le is a re v o lu tio n a ry new m e m ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Leadless C h ip Carriers


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    PDF DPZ2MW32NV3 120ns A126-14 3UA12

    application of microprocessor in aircrafts

    Abstract: NEC 20PIN DIP
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT «PD4992 8-Bit Parallel I/O Calendar Clock The /¿PD4992is a CMOS integrated circuit which outputs 8-bit parallel time and calendar data in a system in which a microprocessor is employed. The ¿¿PD4992 operates at 32.768 kHz and provides year, month, day of month, day


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    PDF uPD4992 PD4992is PD4992 /JPD4992 application of microprocessor in aircrafts NEC 20PIN DIP

    MT4C1024

    Abstract: MT4C1024-8
    Text: ASO MT4C1024 883C 1 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG DRAM 1 DRAM X FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL


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    PDF MT4C1024 MIL-STD-883 18-Pin 175mW 512-cycle MT4C1024-8

    sick wl 33

    Abstract: PT 2299 MB814100-10 sick WL IIB814100-12 MB814100-12 MB814100-80 MB814400 B814100
    Text: FUJITSU June 1990 Edition 1.0 M B 8 1 4 100-80/-10/-12 CMOS 4,194,304 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 1 Bit Fast Page Mode Dynamic RAM The Fujitsu MB814100isafullydecodedCMOSdynamicRAM DRAM thatcontainsa total of 4,194,304 memory cells in ax 1 configuration. The MB814100features a fast


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    PDF MB814100-80/-10/-12 MB814100isafullydecodedCMOSdynamicRAM MB814100features 048-bits MB814100 C26D53S- MB814100-80 MB814100-10 MB814100-12 sick wl 33 PT 2299 MB814100-10 sick WL IIB814100-12 MB814100-12 MB814100-80 MB814400 B814100

    5 x 7 LED Dot Matrix 8086 assembly language code

    Abstract: vhdl code for 4*4 keypad scanner ofw 731 Siemens Siemens OFW 731 CP032 automatic toll tax project Siemens ECU Schematic ECU Siemens C16x TL902 DATAMAN S3 Programmer
    Text: VOLUME 10, NUMBER 6 U.S. $3.95 CANADA $4.95 JUNE 1997 A MILLER FREEMAN PUBLICATION • >C- :-:= ìt TO MARKET WITH HARDWARE-SOFTWARE CO-SIMULATION The U n iv e rs i ] iie ric W ritin g fo r " D e s ig n s»!* m r n t m m m w w . 1 j. SOFTWARE DEBUGGERS mHì1


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    PDF SPS-2000 5 x 7 LED Dot Matrix 8086 assembly language code vhdl code for 4*4 keypad scanner ofw 731 Siemens Siemens OFW 731 CP032 automatic toll tax project Siemens ECU Schematic ECU Siemens C16x TL902 DATAMAN S3 Programmer

    Untitled

    Abstract: No abstract text available
    Text: June 1990 Edition 1.0 DATA SHEET FUJITSU MB814100-80/-10/-12 CMOS 4,194,304 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 1 Bit Fast Page Mode Dynamic RAM The Fujitsu MB814100 is afully decoded CMOS dynamic RAM DRAM that contains a 101310(4,194,304 memory colls in ax 1 configuration. The MB814100 features a fast


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    PDF MB814100-80/-10/-12 MB814100 048-bits C26054S-1C MB814100-80 MB814100-10 MB814100-12

    Untitled

    Abstract: No abstract text available
    Text: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture


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    PDF MX29F1610 120/150ns 150ms Int03/11/1998 44-PIN 48-PIN

    SCE2E

    Abstract: No abstract text available
    Text: SH A R P I SPEC No. 1 M F M Z - J 1 0 4 0 3 A ISSUE: Aug. 5. 1998_ To; REFERENCE SPECIFICATIONS Product Type 16M x8) Flash Metnoiy+2M(x8) SRAM L R S 1310A Model No. ( LR S1 3 1 OA) ♦This specifications contains 5 3 pages including the cover and appendix.


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    PDF LRS1310A, SCE2E

    RAS 1210 SUN HOLD

    Abstract: sun hold RAS 1210 965 IL 48t86 sun hold RAS 1210 FT M48TB6 JNC15
    Text: SCS-mOMSOM M48T86 m 5 VOLT PC REAL TIME CLOCK • DROP-IN REPLACEMENT for PC-AT COMPUTER CLOCK/CALENDAR • COUNTS SECONDS, MINUTES, HOURS, DAYS, DAY of the WEEK, DATE, MONTH and YEAR with LEAP YEAR COMPENSATION ■ INTERFACED WITH SOFTWARE AS 128 RAM LOCATIONS:


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    PDF M48T86 500ms RAS 1210 SUN HOLD sun hold RAS 1210 965 IL 48t86 sun hold RAS 1210 FT M48TB6 JNC15

    Untitled

    Abstract: No abstract text available
    Text: AMDËI AmCOXXDFLKA 1,2,4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS Separate attribute memory • High performance Automated write and erase operations increase system write performance — 200/150 ns maximum access time ■ Single supply operation


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    PDF 025752B 003423b

    ah7al

    Abstract: NC-641 TIT lot trace code
    Text: nD M ^ DPZ1MX16V3 I l / l D ens^ P a c M icrosystem s, Inc^ _1 M EC X 16 FLASH EEPROM VERSA-STACK M ODULE ADVANCED INFORMATION DESCRIPTION: The D P Z 1 M X 1 6V 3 "V E R S A -S T A C K " m odule is a revolutionary new memory subsystem using Dense-Pac


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    PDF DPZ1MX16V3 II1111111IIBII 30A070-30 ah7al NC-641 TIT lot trace code

    Untitled

    Abstract: No abstract text available
    Text: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS826B - SEPTEMBER 1996 - REVISED OCTOBER 1987 * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation • f • • Organization 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture


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    PDF TMS29LF800T, TMS29LF800B 8-BIT/524288 16-BIT SMJS826B 16K-Byte/One 32K-Byte/16K-Word 64K-Byte/32K-Word TMS29LF8Q0T,

    Untitled

    Abstract: No abstract text available
    Text: E/M28C64 Timer E2 64K Electrically Erasable PROM October 1989 Description Features m Military and Extended Temperature Range SEEO’s E/M28C64 is a CMOS 5Vonty, 8 K x8 Electrically Erasable Programmable Read Only Memory EEPROM . It is manufactured using SEEQ’s advanced 1.25 micron


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    PDF E/M28C64 E/M28C64 M28C64 MD400001/D 28C64 125-C

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20855-4E FLASH MEMORY CMOS 16M 2M x 8 BIT M BM 29LV 016T-30-90 -i 2/M B M 29 LV 01 6B-30-90 -12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands


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    PDF DS05-20855-4E 016T-30-90 6B-30-90 40-pin F40007S-1C-1 FPT-40P-M07) 04V----1 043-o2) F40008S-1C-1