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    OF 828 TRANSISTOR Search Results

    OF 828 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    OF 828 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N5114

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5114
    • 1 -
    • 10 -
    • 100 $33.43
    • 1000 $33.43
    • 10000 $33.43
    		Buy Now

    OF 828 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier


    Original     		PDF 64-byte

    3654A

    Abstract: at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0
    Text: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier


    Original     		PDF 64-byte 128-byte 3654A at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0

    C 828 Transistor

    Abstract: C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9
    Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE


    Original     		PDF MIL-R-39016/9 MIL-R-39016/15 MIL-R-39016/20 MIL-R-28776/1 C 828 Transistor C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9

    C 828 Transistor

    Abstract: transistor c 828 cii to-5 type mad relay
    Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE


    Original     		PDF MIL-R-39016/9 MIL-R-39016/15 MIL-R-39016/20 MIL-R-28776/1 C 828 Transistor transistor c 828 cii to-5 type mad relay

    ALLIED 8546576

    Abstract: 854-6502 C959 854-6565 854-6574 854-6525 transistor 5724 scr 4059 SC250E SC416 TRANSISTOR
    Text: Mallory Sonalert and Minilert Audible Warning Devices Visit MalloryÕs Website at www.nacc-mallory.com PC Board Mounted Sonalert Signal Compact Sonalert II Audible Signal c 4-28 VDC c Continuous Tone 64-78 dB Sound Level c 3-16 mA Typical Operating Current


    Original     		PDF c4-28 c3-16 SBM428. SC250E SC250F LSC616N SC628D SC628H; ALLIED 8546576 854-6502 C959 854-6565 854-6574 854-6525 transistor 5724 scr 4059 SC416 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BUK663R7-75C N-channel TrenchMOS FET Rev. 01 — 6 July 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been


    Original     		PDF BUK663R7-75C

    C 828 Transistor

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20074 14 watts, 1.477-1.501 GHz Cellular Radio RF Power Transistor Description The 20074 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.477 to 1.501 GHz. Rated at 14 watts minimum output power, it may be used for both CW and PEP


    OCR Scan     		PDF Emitter-Ba01 C 828 Transistor

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES Excellent Video Performance Differential Gain & Phase Error of 0.01% & 0.05° High Speed 130 MHz 3 dB Bandwidth G = +2 450 V /( jis Slew Rate 80 ns Settling Tim e to 0.01% Low Power 15 m A Max Power Supply Current High Output Drive Capability:


    OCR Scan     		PDF

    2SD1741

    Abstract: 2SB1171 2SB1171A 2SD1741A ic 4604 tc 4604
    Text: Power Transistors 2 S D 1 7 4 1 , 2SD1741, 2SD1741A 2 S D 1 7 4 1 A Silicon P N P Triple-Diffgsed P lanar Type P ackage Dim ensions Pow er Amplifier T V Vertical Deflection Output Pair with 2 S B 1 171, 2 S B 11 71 A • Features • High DC cu rre n t gain Iife and good linearity


    OCR Scan     		PDF 2SD1741, 2SD1741A 2SD1741 2SD1741A 3Efl52 2SB1171 2SB1171A ic 4604 tc 4604

    Untitled

    Abstract: No abstract text available
    Text: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me­ sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220


    OCR Scan     		PDF MJE13004 MJE13005 MJE13004/13005 JedecTO-220 O-220 MJE13004-MJE13005

    3N171

    Abstract: VN10MA C 828
    Text: _ _ C U lO O IC V N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device


    OCR Scan     		PDF 3N170/3N171 3N171 VN10MA C 828

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device


    OCR Scan     		PDF 3N170/3N171 00CH42

    2SC2121

    Abstract: cannon terminal g25a AC42C
    Text: 2 5 2 / 'J D > N P N = » E « y . - y - J B h > ; ^ SILICON NPN TRIPLE DIFFUSED M ESA TRANSISTOR O » » E E * 4 S’ T o High Voltage Switching Applications •  i Œ T t y?m ; v < S Î n M Œ ^ sÎS^> ; Unit In C! E S = 7 5 0 V v CE sat = 5v (Max.) at Iq= 4A , Ijj=1A


    OCR Scan     		PDF 2sc2121 2SC2121 cannon terminal g25a AC42C

    diode U1J

    Abstract: 2SK2866 10A 600V MOS toshiba U1J 550 U1J diode U1J ON semiconductor diode U1J ON ON U1J 2-10P1B on semiconductor U1J
    Text: TOSHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS : RßS (ON) = 0-540 (Typ.)


    OCR Scan     		PDF 2SK2866 VDD-400V, diode U1J 2SK2866 10A 600V MOS toshiba U1J 550 U1J diode U1J ON semiconductor diode U1J ON ON U1J 2-10P1B on semiconductor U1J

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 03.6 ± 0.2 10.3MAX-


    OCR Scan     		PDF 2SK2866 0-54n --10A,

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3


    OCR Scan     		PDF 2SK2866 20kil)

    3N170

    Abstract: 3N170-71 3N171 X3N170-71
    Text: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATU RES H AND LING P R E C A U TIO N S • • • • M O S field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible dam age to the device


    OCR Scan     		PDF 3N170/3N171 1B44322 3N170 3N170-71 3N171 X3N170-71

    Untitled

    Abstract: No abstract text available
    Text: T R A N S IS T O R M O D U L E ^ - > QCA100BA60 UL!E76102 M Q C A 10 0 B A 6 0 is a dual Darlington power transistor module which has series-connected U LTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode (trr: 200ns). The mounting base of the


    OCR Scan     		PDF QCA100BA60 E76102 200ns)

    Untitled

    Abstract: No abstract text available
    Text: _ Models PT-10 and PT-20 VISHAY T Vishay Dale Transformers Pulse, Trigger Type FEATURES • Choice of printed circuit or bobbin-type configurations. • Designed to transfer high amplitude or long duration pulses without saturation. • Designed for low-cost trigger source isolation in half and full wave SCR power


    OCR Scan     		PDF PT-10 PT-20 T50T98 29-Apr-99

    dta144es

    Abstract: DTA144EU
    Text: DTA144EU/DTA144EK/DTA144ES/DTA144EF DTA144EL/DTA144EA/DTA144EV h -7 > v 7-. £ / J ransistors D T A 1 4 4 E U /D T A 1 4 4 E K /D T A 1 4 4 E S D T A 1 4 4 E F /D T A 1 4 4 E L /D T A 1 4 4 E A DTA1 4 4 E V r> '^ b h7>y^^ Y ^ ' y y 7 ,^ X ' f y 3-/Transistor Switch


    OCR Scan     		PDF DTA144EU/DTA144EK/DTA144ES/DTA144EF DTA144EL/DTA144EA/DTA144EV DTA144ES DTA144EU dta144es DTA144EU

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK1828 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 828 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS + 0.5 2.5-0.3 + 0.25 i 1.5-0.15 i 2.5V Gate Drive Low Threshold Voltage : V^h —0.5—1.5V


    OCR Scan     		PDF 2SK1828 O-236MOD SC-59

    TIP42 philips

    Abstract: T1P42B
    Text: _ PHILIPS INTERN ATIONAL SbE D TIP42;A . _TIP42B;C 711GÖ2b GGM3S34 DÖ1 • PHIN ■ SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier


    OCR Scan     		PDF TIP42 TIP42B GGM3S34 TIP41 TIP42jA T1P42B 711002b 0043S40 X--33--21 TIP42 philips

    Untitled

    Abstract: No abstract text available
    Text: TIP42;A TIP42B;C _ J V SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. NPN complements are TIP41 series.


    OCR Scan     		PDF TIP42 TIP42B TIP41 TIP42 Dimen1981 bb53T

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2889 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2889 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • • •


    OCR Scan     		PDF 2SK2889