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    2SK2866 Price and Stock

    Toshiba America Electronic Components 2SK2866(F)

    MOSFET N-CH 600V 10A TO220AB
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    Toshiba America Electronic Components 2SK2866

    POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 600V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SK2866 2,428
    • 1 $3.15
    • 10 $3.15
    • 100 $3.15
    • 1000 $3.15
    • 10000 $1.1025
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    2SK2866 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK2866 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    2SK2866 Toshiba FETs - Nch 500V Original PDF
    2SK2866 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2866 Toshiba Original PDF
    2SK2866 Toshiba Field Effect Transistor Silicon N Channel MOS Type Scan PDF
    2SK2866 Toshiba Silicon N-channel MOS type field effect transistor for high speed, high current switching, chopper regulator, DC-DC converter, motor drive applications Scan PDF
    2SK2866(F) Toshiba 2SK2866 - MOSFETs MOSFET N-Ch 600V 10A Rdson=0.75Ohm Original PDF

    2SK2866 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K2866

    Abstract: 2SK2866 2-10P1B
    Text: 2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2866 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) z High forward transfer admittance : |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK2866 K2866 2SK2866 2-10P1B

    K2866

    Abstract: No abstract text available
    Text: 2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2866 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) z High forward transfer admittance : |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK2866 K2866

    2SK2866

    Abstract: No abstract text available
    Text: 2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2866 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance : |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK2866 2SK2866

    K2866

    Abstract: 2SK2866 10A 600V MOS 2-10P1B 2040v
    Text: 2SK2866 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2866 ○ レギュレータDC−DC コンバータ用、 モータドライブ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 9.0S (標準)


    Original     		PDF 2SK2866 O-220AB SC-46 2-10P1B K2866 2002/95/EC) K2866 2SK2866 10A 600V MOS 2-10P1B 2040v

    2-10P1B

    Abstract: 2SK2866
    Text: 2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2866 Chopper Regulator, DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) l High forward transfer admittance : |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK2866 2-10P1B 2SK2866

    K2866

    Abstract: 2-10P1B 2SK2866
    Text: 2SK2866 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2866 ○ レギュレータDC−DC コンバータ用、 モータドライブ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.54 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 9.0S (標準)


    Original     		PDF 2SK2866 O-220AB SC-46 2-10P1B K2866 2002/95/EC) K2866 2-10P1B 2SK2866

    2SK2866

    Abstract: 2-10P1B k2866
    Text: 2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2866 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance : |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK2866 2SK2866 2-10P1B k2866

    K2866

    Abstract: 2-10P1B 2SK2866
    Text: 2SK2866 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2866 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) z High forward transfer admittance : |Yfs| = 9.0 S (typ.)


    Original     		PDF 2SK2866 K2866 2-10P1B 2SK2866

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    TA1343NG

    Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
    Text: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理


    Original     		PDF p12p13 p17p18 p19p22 SCJ0001D SCJ0001C TA1343NG TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2866 SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Drain-Source ON Resistance : Rjjs (ON) = 0.54 fl (Typ.)


    OCR Scan     		PDF 2SK2866

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 03.6 ± 0.2 10.3MAX-


    OCR Scan     		PDF 2SK2866 0-54n --10A,

    2-10P1B

    Abstract: 2SK2866
    Text: TOSHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2866 2-10P1B 2SK2866

    2-10P1B

    Abstract: 2SK2866
    Text: TOSHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK2866 2-10P1B

    diode U1J

    Abstract: 2SK2866 10A 600V MOS toshiba U1J 550 U1J diode U1J ON semiconductor diode U1J ON ON U1J 2-10P1B on semiconductor U1J
    Text: TOSHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS : RßS (ON) = 0-540 (Typ.)


    OCR Scan     		PDF 2SK2866 VDD-400V, diode U1J 2SK2866 10A 600V MOS toshiba U1J 550 U1J diode U1J ON semiconductor diode U1J ON ON U1J 2-10P1B on semiconductor U1J

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2866 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2866 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3


    OCR Scan     		PDF 2SK2866 20kil)