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    P521 optocoupler

    Abstract: P521 OPTO P521* opto-coupler optocoupler p521 P521 opto coupler P521 opto-coupler opto p521 opto coupler P521 mosfet 7n60 circuit diagram p521
    Text: Application Note 1020 Green Mode PWM Controller AP3101 - Function Description and Design Consideration Prepared by Wu Quanqing System Engineering Dept. Introduction Owing to low start-up current of 30µA and low operating current of 3mA, the AP3101 can reduce standby


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    PDF AP3101 AP3101 AZ431 P521 optocoupler P521 OPTO P521* opto-coupler optocoupler p521 P521 opto coupler P521 opto-coupler opto p521 opto coupler P521 mosfet 7n60 circuit diagram p521

    transformer ei28

    Abstract: CT 5D-9 XL1225 transistor capacitor 100uf 25v AP4310 diode 5d9 resistor 10k xl1225 5d9 capacitor fuse 2a 250v
    Text: BCD Semi Ltd Co. AP384xG Demo Board Manual Content: 1. Description 2. Specifications 3. Schematics of the PCB 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result I. PROPRIETARY & CONFIDENTIAL ADVANCED ANALOG CIRCUITS CORPORATION


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    PDF AP384xG 5V-265V AP3843G transformer ei28 CT 5D-9 XL1225 transistor capacitor 100uf 25v AP4310 diode 5d9 resistor 10k xl1225 5d9 capacitor fuse 2a 250v

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


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    PDF IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65

    7N60a4

    Abstract: HGTG7N60A4 equivalent HGTP7N60A4 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 TA49331
    Text: HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


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    PDF HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. 100kHz 7N60a4 HGTG7N60A4 equivalent HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A TA49331

    7n60a4

    Abstract: HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26 TA49331
    Text: HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet August 2003 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


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    PDF HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 HGTG7N60A4 150oC. 100kHz 200kHz 125oC 7n60a4 HGT1S7N60A4S9A HGTP7N60A4 LD26 TA49331

    7N60A4

    Abstract: HGTG7N60A4 HGTP7N60A4 TA49331 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A
    Text: HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet June 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


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    PDF HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. 100kHz 7N60A4 TA49331 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A

    7N60A4D

    Abstract: TA49333 TA49331 TA49370 EC 801 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet March 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


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    PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7N60A4D TA49333 TA49331 TA49370 EC 801 HGT1S7N60A4DS9A HGTG7N60A4D

    7N60A4D

    Abstract: TA49370 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D TA49331 7N60A
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


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    PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7N60A4D TA49370 HGT1S7N60A4DS9A HGTG7N60A4D TA49331 7N60A

    7n60a4

    Abstract: 8508 zener HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 HGTP7N60A4 TA49331
    Text: TM HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet June 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and


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    PDF HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. 100kHz 7n60a4 8508 zener HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A TA49331

    7n60a4d

    Abstract: TA49370 TA49331 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTG7N60A4D HGTP7N60A4D
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS TM Data Sheet March 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


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    PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS 150oC. TA49331. TA49370. 7n60a4d TA49370 TA49331 HGT1S7N60A4DS9A HGTG7N60A4D

    Untitled

    Abstract: No abstract text available
    Text: HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 TM Data Sheet March 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


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    PDF HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 150oC. TA49331.

    37n60

    Abstract: 7n60 fairchild fairchild 7n60 FCU7N60TU FCD7N60
    Text: SuperFET TM FCD7N60 / FCU7N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and


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    PDF FCD7N60/FCU7N60 FCD7N60 FCU7N60 FCU7N60 FCU7N60TU 37n60 7n60 fairchild fairchild 7n60

    7n60s5

    Abstract: flyback converter DC/DC 400V byv26 equivalent depletion MOSFET 400V voltage regulator non-isolate flyback pfc using pwm HV9906P byv26 500 HV9906 LED-driver 6 pins flyback
    Text: HV9906 HV9906 FlexSwitch TM Simple Off-Line/PFC & >9V DC/DC Switcher Features Drive one or hundreds of LEDs including White LEDs Programmable Current Source (mA to A) Programmable Voltage Source (Steps Up or Down) 2 Integrator Lock Loop Technology (IL )


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    PDF HV9906 HV9906 1N4148 80VAC 135VAC 1-23V 750mA 7n60s5 flyback converter DC/DC 400V byv26 equivalent depletion MOSFET 400V voltage regulator non-isolate flyback pfc using pwm HV9906P byv26 500 LED-driver 6 pins flyback

    7N60S5

    Abstract: HV9906 400V to 6V DC Regulator byv26 equivalent HV9906P depletion 400V power mosfet Depletion MOSFET led lamp circuit diagram DC DC converter 400V lighting DN2540
    Text: HV9906 HV9906 FlexSwitch TM Simple Off-Line/PFC & >9V DC/DC Switcher Features Drive one or hundreds of LEDs including White LEDs Programmable Current Source (mA to A) Programmable Voltage Source (Steps Up or Down) 2 Integrator Lock Loop Technology (IL )


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    PDF HV9906 HV9906 1N4148 MMBT2907 80VAC 135VAC 1-23V 7N60S5 400V to 6V DC Regulator byv26 equivalent HV9906P depletion 400V power mosfet Depletion MOSFET led lamp circuit diagram DC DC converter 400V lighting DN2540

    7n60s5

    Abstract: byv26 equivalent Depletion MOSFET HV9906 HV9906P STP8NM60 BYV26C BYV28-200 DN3145N8 HV9906LG
    Text: HV9906 HV9906 FlexSwitch TM Simple Off-Line/PFC & >9V DC/DC Switcher Features General Description ‰ ‰ ‰ ‰ The Supertex HV9906 allows the development of the smallest possible, most reliable, offline and wide DC/DC conversion range converters for driving LEDs and other applications. The HV9906


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    PDF HV9906 HV9906 1N4148 80VAC 135VAC 1-23V 750mA 7n60s5 byv26 equivalent Depletion MOSFET HV9906P STP8NM60 BYV26C BYV28-200 DN3145N8 HV9906LG

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    3101M

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated AP3101 GREEN MODE PWM CONTROLLER Description Pin Assignments The AP3101 is a green PWM controller operating in current mode. It is specifically designed for off-line AC-DC adapter and battery charger applications where the needs for low standby power and better


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    PDF AP3101 AP3101 DS37418 3101M

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated AP3102/V/L GREEN MODE PWM CONTROLLER NEW PRODUCT Description Pin Assignments The AP3102/V/L series is a green-mode PWM controller with low start-up current. At normal operation, the switching frequency is externally programmable and trimmed to tight range, and the


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    PDF AP3102/V/L AP3102/V/L 20kHz DS37419

    7N60G-TF3-T

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF 7N60-F/7N60-M/7N60-R /7N60-Q) QW-R502-076 7N60G-TF3-T

    7n60f

    Abstract: 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


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    PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7n60f 7N60 7n60 mosfet 7n60b OF 7N60 7N60A power mosfet 200A ISD74A 7N60G-x TO-262 MOSFET

    7n60f

    Abstract: UTC7N60 7N60R 7N60G-TF3-T 7n60l 7N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged


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    PDF O-220 O-220F 7N60/7N60-R) 7N60-F/7N60-M/7N60-Q) QW-R502-076 7n60f UTC7N60 7N60R 7N60G-TF3-T 7n60l 7N60

    7n60a4d

    Abstract: TA49331 HGTG*N60A4D TA49333 HGTG7N60A4D TA49370 7N60a4 HGT1S7N60A4DS HGT1S7N60A4DS9A HGTP7N60A4D
    Text: HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS interrii J a n u a ry . m D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan
    PDF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS HGTP7N60A4D HGT1S7N60A4DS TA49331. TA49370. 7n60a4d TA49331 HGTG*N60A4D TA49333 HGTG7N60A4D TA49370 7N60a4 HGT1S7N60A4DS9A

    7N60a4

    Abstract: LG 631 IC TA49331 LG 631 HGTD7N60A4S HGTD7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26 transistor st make 803
    Text: HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 in t e r r ii J a n u a ry . m D ata S h eet File N u m b er i 4826 Features 600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    OCR Scan
    PDF HGTD7N60A4S, HGTG7N60A4, HGTP7N60A4 HGTG7N60A4 HGTP7N60A4 TA49331. 7N60a4 LG 631 IC TA49331 LG 631 HGTD7N60A4S HGTD7N60A4S9A LD26 transistor st make 803

    7N60C3

    Abstract: 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor
    Text: H G TP 7N60C3D, HGT1S 7N60C3D, HGT1S7N60C3DS H A R R IS S E M I C O N D U C T O R 1 4 A, 60 0V, U F S S e r i e s N - C h a n n e l I G B T January 1997 wi th An ti - P a r a i I el H y p e r f a s t D i o d e s Features Packaging JEDEC TO-22QAB • 1 4A, 6 0 0 V at T c = 2 5 ° C


    OCR Scan
    PDF 7N60C3D, HGT1S7N60C3DS O-22QAB O-262AA HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS -800-4-H 7N60C3 7N60C3D S7N60 g7N60C3D Zener Diode LT 432 diode lt 823 S7N60C3D 600VU NT 407 F power transistor