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    Ruland Manufacturing Co Inc OCT26-8-A

    1/2" OLDHAM COUPLING HUB
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    DigiKey OCT26-8-A Bag 1
    • 1 $56.39
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    Ruland Manufacturing Co Inc OCT26-6-A

    3/8" OLDHAM COUPLING HUB
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    DigiKey OCT26-6-A Bag 1
    • 1 $56.39
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    RS OCT26-6-A Bulk 3 Weeks 1
    • 1 $34.1
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    Ruland Manufacturing Co Inc OCT26-12-A

    3/4" OLDHAM COUPLING HUB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey OCT26-12-A Bag 1
    • 1 $56.39
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    Ruland Manufacturing Co Inc OCT26-10-A

    5/8" OLDHAM COUPLING HUB
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    DigiKey OCT26-10-A Bag 1
    • 1 $56.39
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    Ruland Manufacturing Co Inc OCT26-8-SS

    1/2" OLDHAM COUPLING HUB
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    DigiKey OCT26-8-SS Bag 1
    • 1 $175.6
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    OCT26 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    USB B PCB RIGHT ANGLE 4 PIN

    Abstract: usb mini dwg
    Text: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD B UPDATED JUNE 1,07 AG C DIMENSIONS ADDED OCT26,07 AG . REAR SHIELD, 0.3MM THICKNESS F F 0.393 9.98 SHIELD THICKNESS 0.3MM NOT INCLUDED DUST COVER,SEE DWG NO. MUSB-2E151-005BP FOR DETAIL 0.098 2.50 0.208 5.3 0.362


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    OCT26 MUSB-2E151-005BP P-MUSB-E151-XX USB B PCB RIGHT ANGLE 4 PIN usb mini dwg PDF

    mmic-amplifier

    Abstract: VPS05178 337 BGA
    Text: BGA 312 Silicon Bipolar MMIC-Amplifier 3  Cascadable 50 -gain block 11 dB typical gain at 1.0 GHz 4  9 dBm typical P -1dB at 1.0 GHz  3 dB-bandwidth: DC to 2.0 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 312


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    VPS05178 EHA07312 OT-143 Oct-26-1999 mmic-amplifier VPS05178 337 BGA PDF

    Bb515

    Abstract: bf999
    Text: BF 999 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package


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    VPS05161 OT-23 EHT07315 EHT07316 BB515 EHM07024 Oct-26-1999 Bb515 bf999 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGX 400 Silicon Switching Diodes Preliminary data 3  Switching applications  High breakdown voltage  Halfbridge rectifier 2 1 VPS05161 1 3 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol


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    VPS05161 EHA07365 OT-23 Oct-26-1999 PDF

    VSO05561

    Abstract: No abstract text available
    Text: BF 799W NPN Silicon RF Transistor 3  For linear broadband amplifier application up to 500 MHz  SAW filter driver in TV tuners 2 1 Type Marking BF 799W LKs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Value Unit


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    VSO05561 OT-323 Oct-26-1999 100MHz EHT07116 EHT07117 VSO05561 PDF

    MARKING 19S

    Abstract: BFG19S VPS05163
    Text: BFG 19S NPN Silicon RF Transistor  For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    VPS05163 BFG19S OT-223 900MHz Oct-26-1999 MARKING 19S BFG19S VPS05163 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF 517 NPN Silicon RF Transistor 3  For amplifier and oscillator applications in TV-tuners 2 1 Type Marking BF 517 LRs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-base voltage


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    VPS05161 OT-23 Oct-26-1999 PDF

    transistor zs

    Abstract: transistor MJE -024 BFR340T BFR34* transistor C5 MARKING TRANSISTOR
    Text: BFR340T NPN Silicon RFTransistor Preliminary data 3  Low voltage/ low current operation  Transistor frequency of 14 GHz  High insertion gain  Ideal for low current amplifiers and oscillators 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    BFR340T VPS05996 EHA07524 Oct-26-2001 transistor zs transistor MJE -024 BFR340T BFR34* transistor C5 MARKING TRANSISTOR PDF

    marking u1s SOT-143

    Abstract: VPS05178 chip Marking 3A3
    Text: BGX 50A Silicon Switching Diode Array 3 • Bridge configuration • High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type Marking BGX 50A U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 Package 4=A2/C3 SOT-143 Maximum Ratings Parameter Symbol


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    VPS05178 EHA00007 OT-143 EHB00147 EHB00148 Oct-26-1999 EHB00149 marking u1s SOT-143 VPS05178 chip Marking 3A3 PDF

    VPS05178

    Abstract: BGA 310
    Text: BGA 310 Silicon Bipolar MMIC-Amplifier 3  Cascadable 50 -gain block  9 dB typical gain at 1.0 GHz 4  9 dBm typical P -1dB at 1.0 GHz  3 dB-bandwidth: DC to 2.4 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 310


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    VPS05178 EHA07312 OT-143 Oct-26-1999 VPS05178 BGA 310 PDF

    VPS05161

    Abstract: No abstract text available
    Text: BF 771 NPN Silicon RF Transistor 3  For modulators and amplifiers in TV and VCR tuners 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 771 RBs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings


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    VPS05161 OT-23 Oct-26-1999 VPS05161 PDF

    SC-75

    Abstract: GMA marking
    Text: BFR 181T NPN Silicon RF Transistor Preliminary data 3  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    VPS05996 SC-75 900MHz Oct-26-1999 SC-75 GMA marking PDF

    VSO05561

    Abstract: MARKING 1t SOT- 323
    Text: BF 771W NPN Silicon RF Transistor 3  For modulators and amplifiers in TV and VCR tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 771W RBs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings


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    VSO05561 OT-323 Oct-26-1999 VSO05561 MARKING 1t SOT- 323 PDF

    k d 998 0

    Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
    Text: BF 998 Silicon N-Channel MOSFET Tetrode 3  Short-channel transistor with high S/C quality factor 4  For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    VPS05178 OT-143 Res00 EHT07305 EHT07306 Oct-26-1999 k d 998 0 transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998 PDF

    VPS05163

    Abstract: BSP 17 D
    Text: BSP 60 . BSP 62 PNP Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage • Complementary types: BSP 50 . BSP 52 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package BSP 60 BSP 60 1=B 2=C 3=E


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    VPS05163 OT-223 Oct-26-1999 EHP00669 EHP00670 100MHz EHP00668 VPS05163 BSP 17 D PDF

    VPS05163

    Abstract: BSP52
    Text: BSP 50 . BSP 52 NPN Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage • Complementary types: BSP 60 . BSP 62 PNP 3 2 1 Pin Configuration VPS05163 Type Marking Package BSP 50 BSP 50 1=B 2=C 3=E


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    VPS05163 OT-223 Oct-26-1999 EHP00663 EHP00664 100MHz EHP00662 VPS05163 BSP52 PDF

    BFr pnp transistor

    Abstract: BFR106 Transistor BFR 80 BFR 30 transistor
    Text: BFR 106 NPN Silicon RF Transistor 3  For low noise, high-gain amplifiers  For linear broadband amplifiers  Special application: antenna amplifiers  Complementary type: BFR 194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!


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    VPS05161 OT-23 Oct-26-1999 BFr pnp transistor BFR106 Transistor BFR 80 BFR 30 transistor PDF

    VCR modulators

    Abstract: 770a
    Text: BF 770A NPN Silicon RF Transistor 3  For IF amplifiers in TV-sat tuners and for VCR modulators 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 770A LSs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings


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    VPS05161 OT-23 Oct-26-1999 VCR modulators 770a PDF

    RF NPN POWER TRANSISTOR 2.5 GHZ

    Abstract: VSO05561 MARKING 1t SOT- 323
    Text: BF 775W NPN Silicon RF Transistor 3  Especially suitable for TV-sat and UHF tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 775W LOs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings


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    VSO05561 OT-323 Oct-26-1999 RF NPN POWER TRANSISTOR 2.5 GHZ VSO05561 MARKING 1t SOT- 323 PDF

    VPS05178

    Abstract: No abstract text available
    Text: BGA 318 Silicon Bipolar MMIC-Amplifier 3  Cascadable 50 -gain block  16 dB typical gain at 1.0 GHz 4  12 dBm typical P -1dB at 1.0 GHz  3 dB-bandwidth: DC to 1.2 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 318


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    VPS05178 EHA07312 OT-143 Oct-26-1999 VPS05178 PDF

    Transistor K 799

    Abstract: transistor BF 450
    Text: BF 799 NPN Silicon RF Transistor 3  For linear broadband amplifier application up to 500 MHz  SAW filter driver in TV tuners 2 1 Type Marking BF 799 LKs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage


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    VPS05161 OT-23 Oct-26-1999 100MHz EHT07115 EHT07116 EHT07117 Transistor K 799 transistor BF 450 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF 775 NPN Silicon RF Transistor 3  Especially suitable for TV-sat and UHF tuners 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 775 LOs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings


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    VPS05161 OT-23 Oct-26-1999 PDF

    Untitled

    Abstract: No abstract text available
    Text: F M REV A B C 13.0 12.2 REVISIONS DESCRIPTION, ECN, EAR NO. NEW PROPOSAL CHANGE THE NOTES ABOUT GEL CORRECT WORD SPELLING IN NOTES DATE OCT26/12 OCT31/12 NOV05/12 APP'D L.CHAN L.CHAN L.CHAN 2 3 NOTES: MATERIALS: HOUSING: ENGINEERING THERMOPLASTIC, FLAMMABILITY U L94V-0


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    OCT26/12 OCT31/12 NOV05/12 L94V-0 0CT26/12 PDF

    UL-1950

    Abstract: No abstract text available
    Text: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t i c : PRI Line 1o SEC (Chip) ^ 0 8 30- -0 5 20 -07 - 4o- -06 3. Electrical Specifications: 25DC OCL: Pins 1-4 98uH±6% @10KHz 0.1V, Tie Pins 2- 3 LL: Pins 1-4 2,5uH Max @1Q0KHz 0.1 V, Tíe Pins 2-3, 5 - 6 - 7 - 8


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    XF0709- AD26S MIL-STD-202. UL94-V-0 E151556 102mm] 05OKHz, B75Vrms 100KHz, 150-300KHz UL-1950 PDF