ic power 22E
Abstract: 3904U power 22E IC 1N916
Text: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)
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Original
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3904U
100mA
3906U
VPW09197
EHA07178
SC-74
EHP00763
EHP00764
Oct-14-1999
ic power 22E
3904U
power 22E IC
1N916
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PDF
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SCT-595
Abstract: VPW05980
Text: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking SMBTA 06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595 Maximum Ratings
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Original
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VPW05980
SCT-595
EHP00821
EHP00819
EHP00820
EHP00815
Oct-14-1999
SCT-595
VPW05980
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PDF
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MARKING 93
Abstract: VPS05163 3CTA
Text: PZTA 92 PNP Silicon High Voltage Transistor High breakdown voltage 4 Low collector-emitter saturation voltage Complementary type: PZTA 42 NPN 3 2 1 Type Marking PZTA 92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT-223 Maximum Ratings
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Original
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VPS05163
OT-223
EHP00346
EHP00735
Oct-14-1999
EHP00736
EHP00737
MARKING 93
VPS05163
3CTA
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PDF
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NPN S2D
Abstract: No abstract text available
Text: SMBTA 92 PNP Silicon High Voltage Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN 2 1 Type Marking SMBTA 92 s2D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings
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Original
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VPS05161
OT-23
Oct-14-1999
EHP00881
EHP00882
EHP00883
NPN S2D
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBTA 13, SMBTA 14 NPN Silicon Darlington Transistors 3 High DC current gain High collector current Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA 13 s1M 1=B 2=E 3=C SOT-23 SMBTA 14 s1N 1=B 2=E 3=C SOT-23 VPS05161 Package
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Original
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OT-23
VPS05161
EHP00826
EHP00827
EHP00828
EHP00829
Oct-14-1999
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PDF
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smbt5086
Abstract: No abstract text available
Text: SMBT 5087 PNP Silicon Transistor 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz 2 1 Type Marking SMBT 5087 s2Q Pin Configuration 1=B 2=E VPS05161 Package 3=C
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Original
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VPS05161
OT-23
120Hz
EHP00793
EHP00794
10kHz
EHP00795
EHP00796
Oct-14-1999
smbt5086
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PDF
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NC7010
Abstract: No abstract text available
Text: BSM 10 GD 120 DN2 E3224 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 IC Package Ordering Code 1200V 15A ECONOPACK 2
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Original
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E3224
GD120DN2E3224
NC7010
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PDF
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3904
Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
Text: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23
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Original
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100mA
VPS05161
OT-23
Oct-14-1999
EHP00763
EHP00764
EHP00757
EHP00758
3904
"marking s1a" sot-23
transistor 3904
1N916
3906 PNP
transistor 3906
3904 TRANSISTOR npn
h12e
3904 SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBTA 56 PNP Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06 NPN 2 1 Type Marking SMBTA 56 s2G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter
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Original
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VPS05161
OT-23
EHP00849
EHP00850
EHP00851
EHP00852
Oct-14-1999
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PDF
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VPS05163
Abstract: 43 SOT223 MARKING
Text: PZTA 42, PZTA 43 NPN Silicon High-Voltage Transistors • High breakdown voltage 4 • Low collector-emitter saturation voltage • Complementary types; PZTA 92, PZTA 93 PNP 3 2 1 Pin Configuration VPS05163 Type Marking Package PZTA 42 PZTA 42 1=B 2=C 3=E
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Original
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VPS05163
OT-223
EHP00320
EHP00724
EHP00725
EHP00726
Oct-14-1999
VPS05163
43 SOT223 MARKING
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PDF
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TRANSISTOR S1d
Abstract: SCT-595
Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595
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Original
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VPW05980
SCT-595
Oct-14-1999
EHP00842
EHP00843
TRANSISTOR S1d
SCT-595
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PDF
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h11e
Abstract: SMBT3904UPN
Text: SMBT 3904U PN NPN/PNP Silicon Switching Transistor Array High current gain 4 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 VPW09197 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177
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Original
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3904U
VPW09197
EHA07177
SC-74
EHP00763
EHP00764
Oct-14-1999
EHP00757
h11e
SMBT3904UPN
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PDF
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TRANSISTOR S1d
Abstract: s1D marking, datasheet sot-23
Text: SMBTA 42 NPN Silicon Transistor for High Voltages 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP 2 1 Type Marking SMBTA 42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings
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Original
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VPS05161
OT-23
Oct-14-1999
EHP00842
EHP00843
EHP00844
TRANSISTOR S1d
s1D marking, datasheet sot-23
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PDF
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ic power 22E
Abstract: 3904S SMBT 3904S 1N916 VPS05604
Text: SMBT 3904S NPN Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package Complementary type: SMBT 3906S (PNP)
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Original
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3904S
100mA
3906S
VPS05604
EHA07178
OT-363
EHP00763
EHP00764
Oct-14-1999
ic power 22E
3904S
SMBT 3904S
1N916
VPS05604
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PDF
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MARKING S1G
Abstract: No abstract text available
Text: SMBTA 06 NPN Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56 PNP 2 1 Type Marking SMBTA 06 s1G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter
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Original
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VPS05161
OT-23
EHP00818
EHP00819
EHP00820
EHP00821
Oct-14-1999
MARKING S1G
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PDF
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EHP00364
Abstract: No abstract text available
Text: SMBTA 63, SMBTA 64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking Pin Configuration SMBTA 63 s2U 1=B 2=E 3=C SOT-23 SMBTA 64 s2V 1=B 2=E 3=C SOT-23 VPS05161 Package Maximum Ratings Parameter Symbol
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Original
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OT-23
VPS05161
EHP00364
EHP00215
EHP00415
EHP00365
Oct-14-1999
EHP00364
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PDF
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VPW05980
Abstract: No abstract text available
Text: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking SMBTA 56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT-595 Maximum Ratings
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Original
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VPW05980
SCT-595
Package10
Oct-14-1999
EHP00852
EHP00850
EHP00851
EHP00846
VPW05980
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PDF
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V23990-k438
Abstract: No abstract text available
Text: Power Modules New MiniSKiiP Modules with Mitsubishi’s Latest IGBT 6.1 Product name ® MiniSKiiP PIM 3 16 x 82 x 59 mm Vincotech has extended its range of MiniSKiiP® PIM 3 and MiniSKiiP® PACK 3 power modules featuring Mitsubishi IGBT 6.1 versions covering
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Original
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20-to-70
37NAB12T4V1
38NAB12T4V1
V23990-K438-F60-PM
37AC12T4V1
V23990-K439-F60-PM
38AC12T4V1
V23990-K430-F60-PM
39AC12T4V1
Oct-14
V23990-k438
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PDF
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ic power 22E
Abstract: 1N916
Text: SMBT 3906U PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3904U (NPN)
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Original
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3906U
100mA
3904U
VPW09197
EHA07175
SC-74
EHP00773
EHP00764
Oct-14-1999
ic power 22E
1N916
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PDF
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transistor 2222a
Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
Text: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23
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Original
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VPS05161
OT-23
2222/A
EHP00744
EHP00745
Oct-14-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222A transistor
2222a
2907a TRANSISTOR PNP
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PDF
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3906
Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
Text: SMBT 3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings
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Original
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100mA
VPS05161
OT-23
EHP00772
EHP00773
Oct-14-1999
EHP00768
EHP00769
3906
transistor 3906
k0300
H12E
1N916
EHP00772
3906 pnp
ic power 22E
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBD 7000 Silicon Switching Diode Array 3 • For high-speed switching applications • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD 7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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VPS05161
EHA07005
OT-23
EHB00137
EHB00138
Oct-14-1999
EHB00139
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PDF
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DIODE 914
Abstract: 914 DIODE
Text: SMBD 914 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking SMBD 914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage
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Original
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VPS05161
EHA07002
OT-23
40m25V
EHB00112
EHB00113
Oct-14-1999
EHB00114
DIODE 914
914 DIODE
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PDF
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P07D03LV
Abstract: NIKO-SEM
Text: P07D03LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS
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Original
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P07D03LV
OCT-14-2002
P07D03LV
NIKO-SEM
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PDF
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