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    BPM Microsystems Inc LSOCT14EA

    LSOCT14EA Socket Card for BPM Pr
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    OCT14 Datasheets Context Search

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    ic power 22E

    Abstract: 3904U power 22E IC 1N916
    Text: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)


    Original     		PDF 3904U 100mA 3906U VPW09197 EHA07178 SC-74 EHP00763 EHP00764 Oct-14-1999 ic power 22E 3904U power 22E IC 1N916

    SCT-595

    Abstract: VPW05980
    Text: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking SMBTA 06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595 Maximum Ratings


    Original     		PDF VPW05980 SCT-595 EHP00821 EHP00819 EHP00820 EHP00815 Oct-14-1999 SCT-595 VPW05980

    MARKING 93

    Abstract: VPS05163 3CTA
    Text: PZTA 92 PNP Silicon High Voltage Transistor  High breakdown voltage 4  Low collector-emitter saturation voltage  Complementary type: PZTA 42 NPN 3 2 1 Type Marking PZTA 92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT-223 Maximum Ratings


    Original     		PDF VPS05163 OT-223 EHP00346 EHP00735 Oct-14-1999 EHP00736 EHP00737 MARKING 93 VPS05163 3CTA

    NPN S2D

    Abstract: No abstract text available
    Text: SMBTA 92 PNP Silicon High Voltage Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN 2 1 Type Marking SMBTA 92 s2D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF VPS05161 OT-23 Oct-14-1999 EHP00881 EHP00882 EHP00883 NPN S2D

    Untitled

    Abstract: No abstract text available
    Text: SMBTA 13, SMBTA 14 NPN Silicon Darlington Transistors 3  High DC current gain  High collector current  Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA 13 s1M 1=B 2=E 3=C SOT-23 SMBTA 14 s1N 1=B 2=E 3=C SOT-23 VPS05161 Package


    Original     		PDF OT-23 VPS05161 EHP00826 EHP00827 EHP00828 EHP00829 Oct-14-1999

    smbt5086

    Abstract: No abstract text available
    Text: SMBT 5087 PNP Silicon Transistor 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz 2 1 Type Marking SMBT 5087 s2Q Pin Configuration 1=B 2=E VPS05161 Package 3=C


    Original     		PDF VPS05161 OT-23 120Hz EHP00793 EHP00794 10kHz EHP00795 EHP00796 Oct-14-1999 smbt5086

    NC7010

    Abstract: No abstract text available
    Text: BSM 10 GD 120 DN2 E3224 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 IC Package Ordering Code 1200V 15A ECONOPACK 2


    Original     		PDF E3224 GD120DN2E3224 NC7010

    3904

    Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
    Text: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF 100mA VPS05161 OT-23 Oct-14-1999 EHP00763 EHP00764 EHP00757 EHP00758 3904 "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23

    Untitled

    Abstract: No abstract text available
    Text: SMBTA 56 PNP Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06 NPN 2 1 Type Marking SMBTA 56 s2G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter


    Original     		PDF VPS05161 OT-23 EHP00849 EHP00850 EHP00851 EHP00852 Oct-14-1999

    VPS05163

    Abstract: 43 SOT223 MARKING
    Text: PZTA 42, PZTA 43 NPN Silicon High-Voltage Transistors • High breakdown voltage 4 • Low collector-emitter saturation voltage • Complementary types; PZTA 92, PZTA 93 PNP 3 2 1 Pin Configuration VPS05163 Type Marking Package PZTA 42 PZTA 42 1=B 2=C 3=E


    Original     		PDF VPS05163 OT-223 EHP00320 EHP00724 EHP00725 EHP00726 Oct-14-1999 VPS05163 43 SOT223 MARKING

    TRANSISTOR S1d

    Abstract: SCT-595
    Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595


    Original     		PDF VPW05980 SCT-595 Oct-14-1999 EHP00842 EHP00843 TRANSISTOR S1d SCT-595

    h11e

    Abstract: SMBT3904UPN
    Text: SMBT 3904U PN NPN/PNP Silicon Switching Transistor Array  High current gain 4 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 VPW09197 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177


    Original     		PDF 3904U VPW09197 EHA07177 SC-74 EHP00763 EHP00764 Oct-14-1999 EHP00757 h11e SMBT3904UPN

    TRANSISTOR S1d

    Abstract: s1D marking, datasheet sot-23
    Text: SMBTA 42 NPN Silicon Transistor for High Voltages 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP 2 1 Type Marking SMBTA 42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF VPS05161 OT-23 Oct-14-1999 EHP00842 EHP00843 EHP00844 TRANSISTOR S1d s1D marking, datasheet sot-23

    ic power 22E

    Abstract: 3904S SMBT 3904S 1N916 VPS05604
    Text: SMBT 3904S NPN Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT 3906S (PNP)


    Original     		PDF 3904S 100mA 3906S VPS05604 EHA07178 OT-363 EHP00763 EHP00764 Oct-14-1999 ic power 22E 3904S SMBT 3904S 1N916 VPS05604

    MARKING S1G

    Abstract: No abstract text available
    Text: SMBTA 06 NPN Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56 PNP 2 1 Type Marking SMBTA 06 s1G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter


    Original     		PDF VPS05161 OT-23 EHP00818 EHP00819 EHP00820 EHP00821 Oct-14-1999 MARKING S1G

    EHP00364

    Abstract: No abstract text available
    Text: SMBTA 63, SMBTA 64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking Pin Configuration SMBTA 63 s2U 1=B 2=E 3=C SOT-23 SMBTA 64 s2V 1=B 2=E 3=C SOT-23 VPS05161 Package Maximum Ratings Parameter Symbol


    Original     		PDF OT-23 VPS05161 EHP00364 EHP00215 EHP00415 EHP00365 Oct-14-1999 EHP00364

    VPW05980

    Abstract: No abstract text available
    Text: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking SMBTA 56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT-595 Maximum Ratings


    Original     		PDF VPW05980 SCT-595 Package10 Oct-14-1999 EHP00852 EHP00850 EHP00851 EHP00846 VPW05980

    V23990-k438

    Abstract: No abstract text available
    Text: Power Modules New MiniSKiiP Modules with Mitsubishi’s Latest IGBT 6.1 Product name ® MiniSKiiP PIM 3 16 x 82 x 59 mm Vincotech has extended its range of MiniSKiiP® PIM 3 and MiniSKiiP® PACK 3 power modules featuring Mitsubishi IGBT 6.1 versions covering


    Original     		PDF 20-to-70 37NAB12T4V1 38NAB12T4V1 V23990-K438-F60-PM 37AC12T4V1 V23990-K439-F60-PM 38AC12T4V1 V23990-K430-F60-PM 39AC12T4V1 Oct-14 V23990-k438

    ic power 22E

    Abstract: 1N916
    Text: SMBT 3906U PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3904U (NPN)


    Original     		PDF 3906U 100mA 3904U VPW09197 EHA07175 SC-74 EHP00773 EHP00764 Oct-14-1999 ic power 22E 1N916

    transistor 2222a

    Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
    Text: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF VPS05161 OT-23 2222/A EHP00744 EHP00745 Oct-14-1999 transistor 2222a transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP

    3906

    Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
    Text: SMBT 3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF 100mA VPS05161 OT-23 EHP00772 EHP00773 Oct-14-1999 EHP00768 EHP00769 3906 transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E

    Untitled

    Abstract: No abstract text available
    Text: SMBD 7000 Silicon Switching Diode Array 3 • For high-speed switching applications • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD 7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF VPS05161 EHA07005 OT-23 EHB00137 EHB00138 Oct-14-1999 EHB00139

    DIODE 914

    Abstract: 914 DIODE
    Text: SMBD 914 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking SMBD 914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage


    Original     		PDF VPS05161 EHA07002 OT-23 40m25V EHB00112 EHB00113 Oct-14-1999 EHB00114 DIODE 914 914 DIODE

    P07D03LV

    Abstract: NIKO-SEM
    Text: P07D03LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS


    Original     		PDF P07D03LV OCT-14-2002 P07D03LV NIKO-SEM