Untitled
Abstract: No abstract text available
Text: BCP 71M NPN Silicon AF Power Transistor Preliminary data 4 • Drain switch for RF power amplifier stages • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration
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VPW05980
Q62702-C2597
SCT-595
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SCT-595
Abstract: VPW05980
Text: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking SMBTA 06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595 Maximum Ratings
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VPW05980
SCT-595
EHP00821
EHP00819
EHP00820
EHP00815
Oct-14-1999
SCT-595
VPW05980
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BCP72M
Abstract: SCT595
Text: BCP72M PNP Silicon AF Power Transistor 4 Drain switch for RF power amplifier stages For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP72M PAs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT595
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BCP72M
VPW05980
SCT595
Nov-29-2001
BCP72M
SCT595
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TRANSISTOR S1d
Abstract: SCT595 SMBTA42M SMBTA92M
Text: SMBTA42M NPN Silicon High-Voltage Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA92M PNP 3 2 1 VPW05980 Type Marking SMBTA42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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SMBTA42M
SMBTA92M
VPW05980
SCT595
Nov-30-2001
EHP00842
EHP00843
TRANSISTOR S1d
SCT595
SMBTA42M
SMBTA92M
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BAW78M
Abstract: SCT595 78-AD
Text: BAW78M Silicon Switching Diode 4 Switching applications 5 High breakdown voltage 3 2 1 VPW05980 Type Marking BAW78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Diode reverse voltage VR 400 Peak reverse voltage
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BAW78M
VPW05980
SCT595
Aug-21-2001
EHB00047
EHB00048
BAW78M
SCT595
78-AD
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Q62702-A3471
Abstract: SCT-595
Text: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications • High breakdown voltage 5 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration BAW 78M GDs Q62702-A3471 Package 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings
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VPW05980
Q62702-A3471
SCT-595
sold05
Jul-27-1998
EHB00047
EHB00048
Q62702-A3471
SCT-595
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Q62702-C2606
Abstract: c2595 Q62702-C2607 Q62702-C2595 SCT-595 MARKING CODE 56m
Text: BCP 54M . BCP 56M NPN Silicon AF Transistors 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 51M.BCP 53M PNP 2 1 VPW05980 Type Marking Ordering Code Pin Configuration
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VPW05980
Q62702-C2595
Q62702-C2606
Q62702-C2607
SCT-595
EHP00269
EHP00267
EHP00270
EHP00271
Q62702-C2606
c2595
Q62702-C2607
SCT-595
MARKING CODE 56m
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Untitled
Abstract: No abstract text available
Text: SMBTA06M NPN Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA56M PNP 3 2 1 VPW05980 Type Marking SMBTA06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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SMBTA06M
SMBTA56M
VPW05980
SCT595
Jul-10-2001
EHP00821
EHP00819
EHP00820
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TRANSISTOR S1d
Abstract: Q62702-A1243 SCT-595
Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 42M s1D Q62702-A1243 Package
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VPW05980
Q62702-A1243
SCT-595
Jun-18-1997
EHP00842
EHP00843
TRANSISTOR S1d
Q62702-A1243
SCT-595
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SCT-595
Abstract: W331 marking E1 SCT-595
Text: BCP 70M PNP Silicon AF Power Transistor 4 For AF driver and output stages High collector current 5 Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP 70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT-595 Maximum Ratings E1 and E2 connected externaly
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VPW05980
SCT-595
Feb-02-2000
SCT-595
W331
marking E1 SCT-595
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SCT-595
Abstract: 78-AD
Text: BAW 78M Silicon Switching Diode Preliminary data 4 • Switching applications 5 • High breakdown voltage 3 2 1 VPW05980 Type Marking BAW 78M GDs Pin Configuration 1=A Package 2 = C 3 n.c. 4 n.c. 5 = C SCT-595 Maximum Ratings Parameter Symbol Diode reverse voltage
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VPW05980
SCT-595
Oct-08-1999
EHB00047
EHB00048
SCT-595
78-AD
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BCP72M
Abstract: SCT595
Text: BCP72M PNP Silicon AF Power Transistor 4 • Drain switch for RF power amplifier stages • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP72M PAs Pin Configuration Package
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BCP72M
VPW05980
SCT595
Jul-02-2001
BCP72M
SCT595
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BCP70M
Abstract: SCT595
Text: BCP70M PNP Silicon AF Power Transistor 4 • For AF driver and output stages • High collector current 5 • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT595 Maximum Ratings E1 and E2 connected externaly
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BCP70M
VPW05980
SCT595
Jul-02-2001
BCP70M
SCT595
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72m transistor
Abstract: transistor marking 72m C2517 Q62702-C2517 SCT-595 marking PAs SCT-595
Text: BCP 72M PNP Silicon AF Power Transistor Preliminary data 4 • Drain switch for RF power amplifier stages • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration
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VPW05980
Q62702-C2517
SCT-595
Jun-05-1998
72m transistor
transistor marking 72m
C2517
Q62702-C2517
SCT-595
marking PAs SCT-595
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C2592
Abstract: Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 marking code AES
Text: BCP 51M . BCP 53M PNP Silicon AF Transistor 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 54M.BCP 56M NPN 2 1 VPW05980 Type Marking Ordering Code Pin Configuration
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VPW05980
Q62702-C2592
Q62702-C2593
Q62702-C2594
SCT-595
EHP00262
EHP00260
EHP00263
EHP00264
C2592
Q62702-C2593
Q62702-C2594
SCT-595
marking code AES
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TRANSISTOR S1d
Abstract: SCT-595
Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595
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VPW05980
SCT-595
Oct-14-1999
EHP00842
EHP00843
TRANSISTOR S1d
SCT-595
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Untitled
Abstract: No abstract text available
Text: SMBTA92M PNP Silicon High-Voltage Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA42M NPN 3 2 1 VPW05980 Type Marking SMBTA92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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SMBTA92M
SMBTA42M
VPW05980
SCT595
Jun-29-2001
EHP00881
EHP00882
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Untitled
Abstract: No abstract text available
Text: SMBTA56M PNP Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA06M NPN 3 2 1 VPW05980 Type Marking SMBTA56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT595 Maximum Ratings
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SMBTA56M
SMBTA06M
VPW05980
SCT595
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BCP51M
Abstract: BCP52M BCP53M BCP54M BCP56M SCT595 SCT-595
Text: BCP51M.BCP53M PNP Silicon AF Transistor 4 For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 Complementary types: BCP54M.BCP56M NPN 2 1 VPW05980 Type Marking Pin Configuration Package BCP51M AAs
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BCP51M.
BCP53M
BCP54M.
BCP56M
VPW05980
BCP51M
BCP52M
SCT595
BCP51M
BCP52M
BCP53M
BCP54M
SCT595
SCT-595
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MARKING S1G
Abstract: SCT595 SMBTA06M SMBTA56M
Text: SMBTA06M NPN Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA56M PNP 3 2 1 VPW05980 Type Marking SMBTA06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings
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SMBTA06M
SMBTA56M
VPW05980
SCT595
EHP00821
EHP00819
EHP00820
EHP00815
Nov-30-2001
MARKING S1G
SCT595
SMBTA06M
SMBTA56M
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SCT595
Abstract: SMBTA06M SMBTA56M TS1200
Text: SMBTA56M PNP Silicon AF Transistor 4 High breakdown voltage Low collector-emitter saturation voltage 5 Complementary type: SMBTA06M NPN 3 2 1 VPW05980 Type Marking SMBTA56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT595 Maximum Ratings
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SMBTA56M
SMBTA06M
VPW05980
SCT595
EHP00852
EHP00850
EHP00851
EHP00846
Nov-30-2001
SCT595
SMBTA06M
SMBTA56M
TS1200
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NPN S2D
Abstract: SCT-595 SCT59
Text: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking SMBTA 92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595
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VPW05980
SCT-595
Oct-14-1999
EHP00881
EHP00882
NPN S2D
SCT-595
SCT59
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TA 8644
Abstract: BFP690 SCT595 GMA marking
Text: BFP690 NPN Silicon Germanium RF Transistor 4 Preliminary data 5 For medium power amplifiers Maxim. available Gain Gma = 17 dB at 1.8 GHz 3 Gold metallization for high reliability 2 70 GHz fT - Silicon Germanium technology 1 VPW05980 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP690
VPW05980
SCT595
200mA
Oct-30-2002
TA 8644
BFP690
SCT595
GMA marking
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VPW05980
Abstract: No abstract text available
Text: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking SMBTA 56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT-595 Maximum Ratings
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VPW05980
SCT-595
Package10
Oct-14-1999
EHP00852
EHP00850
EHP00851
EHP00846
VPW05980
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