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    OA211 Price and Stock

    L-com Inc FOA-211A

    ADPTRREC/MTL ST-SC SMPLX CER
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    DigiKey FOA-211A Bag 5 1
    • 1 $20.77
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    Newark FOA-211A Bulk 49 1
    • 1 $12.59
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    RS FOA-211A Bulk 6 5 Weeks 1
    • 1 $12.46
    • 10 $10.72
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    OMRON Industrial Automation CS1W-OA211

    OUTPUT MODULE 16 SOLID STATE
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    DigiKey CS1W-OA211 Bulk 1 1
    • 1 $543.08
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    OMRON Corporation CS1W-OA211

    16 PT. TRIAC OUT, MODULE - Bulk (Alt: CS1WOA211)
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    Avnet Americas CS1W-OA211 Bulk 1
    • 1 $1074.56
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    Mouser Electronics CS1W-OA211
    • 1 $826.53
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    OMRON Industrial Automation CS1WOA211

    16 Pt. Triac Out, Module |Omron Industrial Automation CS1WOA211
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    Newark CS1WOA211 Bulk 1
    • 1 $1277.37
    • 10 $1149.64
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    Master Electronics CS1WOA211
    • 1 $899.99
    • 10 $851.04
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    OMRON Industrial Automation CS1W-OA211 (ALTERNATE: CS1WOA211)

    16 pt. TRIAC OUT, MODULE | Omron Automation CS1W-OA211
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    RS CS1W-OA211 (ALTERNATE: CS1WOA211) Bulk 1
    • 1 $944.23
    • 10 $878.13
    • 100 $849.81
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    OA211 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    OA211 austriamicrosystems AG OA211 is an OR / AND circuit providing the logical function Q = [ (A+B).C.D ]. Original PDF
    OA211 Unknown Cross Reference Datasheet Scan PDF
    OA211 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    OA211 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    OA211 Unknown Shortform Electronic Component Datasheets Short Form PDF

    OA211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OA211

    Abstract: No abstract text available
    Text: CUB OA211 R Austria Mikro Systeme International 0.6 µm CMOS OA211 is an OR / AND circuit providing the logical function Q = [ A+B .C.D ]. Truth Table A L X X X H B L X X H X C X L X H H D X X L H H Capacitance Q Ci (pF) OA211 A L L L H H A B C D B C D Q


    Original     		PDF OA211 OA211

    TDA 7378

    Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology
    Text: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior


    Original     		PDF STD80/STDM80 notice10. TDA 7378 TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology

    4 BIT 2 INPUT MULTIPLEXER

    Abstract: transistor m5c diode M5C CMLA01 M5C4 grid tie inverter schematic diagram OAI211 AOI21 OAI21 CU240
    Text: Order this Data Sheet by M5C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M5C SERIES Advanced Information M5C SERIES CMOS ARRAYS The M5C Series arrays feature performance optimized 3.3 V and mixed-voltage I/O capability, high-speed interfaces, and analog PLLs for chip-to-chip clock skew


    Original     		PDF

    h3ba omron timer

    Abstract: omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a
    Text: Cat. No. Z901-E1-05 SYSMAC NE1S Series NE1S-CPU01 Programmable Controller OPERATION MANUAL NE1S Series NE1S-CPU01 Programmable Controller Operation Manual Revised December 2006 iv Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator


    Original     		PDF Z901-E1-05 NE1S-CPU01 847-843-7900/Fax: NE1S-CPU01 h3ba omron timer omron h3ba timer H3BA timer wiring diagram TRIAC TAG 9105 omron MA415a

    113 y

    Abstract: HA 1329 QN-08 1329 y-448 AO2222
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.147ns, one fanout (SL = 0.00866pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2 ad4d4 ad5


    Original     		PDF 147ns, 00866pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 113 y HA 1329 QN-08 1329 y-448 AO2222

    AO211

    Abstract: IX 3354 AO222 ND2D2
    Text: Revision History Based on Hard Copy . - First Edition(V1.0) : June 2001 • Chapter 1 : Introduction(V1.0) • Chapter 2 : DC Electrical Characteristics(V1.1) • Chapter 3 : Internal Macrocells(V2.1) • Chapter 4 : Input/Output Cells(V2.1) • Chapter 5 : Compiled Macrocells(V1.1)


    Original     		PDF STD131 AO211 IX 3354 AO222 ND2D2

    tl 0741

    Abstract: 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


    Original     		PDF STDL130 tl 0741 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor

    GCK 164

    Abstract: samsung 649 ao21 OA21D
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.204ns, one fanout (SL = 0.00486pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2_lp ad2b_lp ad2bd2_lp


    Original     		PDF 204ns, 00486pF, 048pF, 048pF ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 GCK 164 samsung 649 ao21 OA21D

    SL 100 data sheet

    Abstract: AO222 sl 100 transistor TRANSISTOR sl 100 transistor sl 100 data sheet AO211 AO22 STDH150 ND3B AO322D2
    Text: LOGIC CELLS Cell Names & Function Descriptions Cell Name AD2 AD2D2 AD2D4 AD2D8 AD2B AD2BD2 AD2BD4 AD2BD8 AD3 AD3D2 AD3D4 AD4 AD4D2 AD4D4 AD5 AD5D2 AD5D4 ND2 ND2D2 ND2D4 ND2D8 ND2B ND2BD2 ND2BD4 ND2BD8 ND3 ND3D2 ND3D4 ND3D8 ND3B ND3BD2 ND3BD4 ND3BD8 ND4 ND4D2


    Original     		PDF STDH150 SL 100 data sheet AO222 sl 100 transistor TRANSISTOR sl 100 transistor sl 100 data sheet AO211 AO22 STDH150 ND3B AO322D2

    MX2D2

    Abstract: OA2111 AO222 AO211 STD130 CHAPTER 1 Introduction to Power Semiconductors standard cell library samsung soc
    Text: Revision History Based on Hard Copy . - First Edition(V1.0) : June 2001 • Chapter 1 : Introduction(V1.0) • Chapter 2 : DC Electrical Characteristics(V1.1) • Chapter 3 : Internal Macrocells(V2.1) • Chapter 4 : Input/Output Cells(V2.1) • Chapter 5 : Compiled Macrocells(V3.1)


    Original     		PDF STD130 MX2D2 OA2111 AO222 AO211 STD130 CHAPTER 1 Introduction to Power Semiconductors standard cell library samsung soc

    TDA 9361 PS

    Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
    Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device


    Original     		PDF STD130 STD130 24nW/MHz ARM920T/ARM940T, TDA 9361 PS tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088

    CTC 880

    Abstract: vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


    Original     		PDF STD111 CTC 880 vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284

    FD2S

    Abstract: STD80 74XX STDL80 STDM80 half adder 74xx FD1S IVCD11 transistor 131 74xx ttl
    Text: Intrduction to STD80/STDM80 1 Table of Contents Library Description. 1-1 Features. 1-1


    Original     		PDF STD80/STDM80 FD2S STD80 74XX STDL80 STDM80 half adder 74xx FD1S IVCD11 transistor 131 74xx ttl

    dl2d

    Abstract: AO222 AO211 LD1A STD110 Samsung 546 FD2QD2
    Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5


    Original     		PDF MDL110 STD110 PLL2013X dl2d AO222 AO211 LD1A STD110 Samsung 546 FD2QD2

    inverter PURE SINE WAVE schematic diagram

    Abstract: sine wave inverter schematic IVT HS 400 PURE SINE WAVE inverter schematic diagram sine wave inverter using pic schematic diagram ac-dc inverter tda 12155 r 4366 1 phase pure sine wave inverter schematic oa31 diode CL-21 capacitor
    Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5


    Original     		PDF MDL110 STD110 inverter PURE SINE WAVE schematic diagram sine wave inverter schematic IVT HS 400 PURE SINE WAVE inverter schematic diagram sine wave inverter using pic schematic diagram ac-dc inverter tda 12155 r 4366 1 phase pure sine wave inverter schematic oa31 diode CL-21 capacitor

    dram verilog model

    Abstract: MC68HC11RM F645D verilog code to generate square wave Verilog code of state machine for 16-byte SRAM 7908 motorola pal spi verilog code 16 bit CISC CPU motorola bubble memory controller MPA1000
    Text: MOTOROLA SEMICONDUCTOR GENERAL INFORMATION APPLICATION NOTE 68030 DRAM Controller Design Using Verilog HDL by Phil Rauba, Motorola Field Applications Engineer Purpose This article is intended to give a hardware engineer insight into the design methodology of using the Verilog Hardware


    Original     		PDF 68ock, MPA1000 DL201 dram verilog model MC68HC11RM F645D verilog code to generate square wave Verilog code of state machine for 16-byte SRAM 7908 motorola pal spi verilog code 16 bit CISC CPU motorola bubble memory controller

    AO331

    Abstract: ha 1452 Y 335 STDH150 nr2d2 FD2S
    Text: Appendix Maximum Fanouts C Appendix C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.073ns, one fanout (SL = 0.00412pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2


    Original     		PDF 073ns, 00412pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 AO331 ha 1452 Y 335 STDH150 nr2d2 FD2S

    TAG 8734

    Abstract: samsung 922 pinout schematic diagram display samsung transistor equivalent book FOR A 1941 samsung schematics processor samsung inverter board 7429 TTL HERCULES Graphics Controller lem HA 10000 LPG CRT Power Supply
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


    Original     		PDF STD130 TAG 8734 samsung 922 pinout schematic diagram display samsung transistor equivalent book FOR A 1941 samsung schematics processor samsung inverter board 7429 TTL HERCULES Graphics Controller lem HA 10000 LPG CRT Power Supply

    Untitled

    Abstract: No abstract text available
    Text: NECES001 C P20K 0 .8 -M IC R O N NEC Electronics Inc. fpgas February 1993 Description Figure 1. CP20K FPGAs NEC Electronics Inc. and Crosspoint Solutions, Inc. have joined forces to offer to system designers an expedient way to prototype in Field Programmable Gate Arrays


    OCR Scan     		PDF NECES001 CP20K RAM8x16* RAM16x16* RAM32x16* RAM8x32* 16x32* RAM32x4* RAM64x4*

    Untitled

    Abstract: No abstract text available
    Text: Order this data sheet by H4C/D MOTOROLA H SEMICONDUCTOR “ TECHNICAL DATA Advance Information H4C SERIES CMOS ARRAYS and the CDA™ ARCHITECTURE H IG H P ER FO R M A NC E T R IP L E LAYER M ETAL S U B -M IC R O N CMOS ARRAYS The s u b -m ic ro n H 4C S e rie s ’ " CM OS gate array fa m ily and th e new


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.


    OCR Scan     		PDF KS7306 KS7306 100-QFP-1414 25ZT1 03125Z VID-97-D004

    MCR 22-8 transistor power

    Abstract: Transistor motorola 418 10146 1987 carrier A022H on 5295 equivalents HDC031 Mustang 300 HDC011 HDC016 HDC049
    Text: Order this data sheet by HDC/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH PERFORMANCE TRIPLE LAYER METAL HDC SERIES CMOS ARRAYS 1.0 MICRON CMOS ARRAYS Built on a 1.0 micron, triple-layer metal CMOS process, the HDC Series represents a significant advancement in microchip technology.


    OCR Scan     		PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    MCR 22-8 transistor power

    Abstract: operation of sr latch using nor gates 2 bit magnitude comparator 0N80 half adder 74 on 5295 transistor carrier A022H AOI21 AOI211 10146 1987
    Text: Order this data sheet by HDC/D 2 5 1991 MOTOROLA HDC SERIES SEM ICONDUCTO R TECHNICAL DATA H IG H PER FO R M A NC E T R IP L E LAYER M ETAL HDC SERIES CMOS ARRAYS B u ilt o n a 1.0 m ic ro n , tr ip le - la y e r metal C M O S p ro ce ss, th e HDC S eries re p re se n ts a s ig n ific a n t a d v a n c e m e n t in m ic ro c h ip te c h n o lo g y .


    OCR Scan     		PDF