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    PEPPERL+FUCHS GmbH KFD2-SR2-2.W.SM

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    Carling Technologies VFD2S00C-BZS00-000

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    FD2S Datasheets Context Search

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    PDF

    CLDCCJ

    Abstract: THA1006 THA1008 vhdl code for 8-bit serial adder CMOS 4000 Series family databook "X-Fab" Core cell library books schmitt trigger cmos cmos 4000 series databook LQFP-44 mQFP-80 to plcc 48
    Text: Gate Array Series THA1006 Description The THA1006 Gate Array Series is a CMOS metal programmable array product targeting high performance, low cost and high complexity applications. The THA1006 series is based on 0.6 micron 2 or 3 layer metal CMOS technology.


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    THA1006 THA1006 CLDCCJ THA1008 vhdl code for 8-bit serial adder CMOS 4000 Series family databook "X-Fab" Core cell library books schmitt trigger cmos cmos 4000 series databook LQFP-44 mQFP-80 to plcc 48 PDF

    jk 13001 TRANSISTOR

    Abstract: jk 13001 13001 S 6D TRANSISTOR jk 13001 h signo 723 operation manual jk 13001 E bd4 lsi logic 0 281 020 099 SIS transistors 13001 s bd 13001 S 6D TRANSISTOR circuit
    Text: LSI LOGIC LCA500K Prelim inary D esig n M anual June 1995 S304 A0 4 O O n s t M h3? This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


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    LCA500K 043/G LCA500K jk 13001 TRANSISTOR jk 13001 13001 S 6D TRANSISTOR jk 13001 h signo 723 operation manual jk 13001 E bd4 lsi logic 0 281 020 099 SIS transistors 13001 s bd 13001 S 6D TRANSISTOR circuit PDF

    TDA 7378

    Abstract: TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology
    Text: D • A • T • A • B • O • O • K STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library April 1997 V SAMSUNG SAMSUNG ASIC STD80/STDM80 0.5µm 5V/3.3V Standard Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior


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    STD80/STDM80 notice10. TDA 7378 TDA 7822 block diagram baugh-wooley multiplier tda 12062 equivalent for tda 4858 ic free transistor equivalent book STD-80 4856 a 14 PIN DIP W908 LSI CMOS Technology PDF

    113 y

    Abstract: HA 1329 QN-08 1329 y-448 AO2222
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.147ns, one fanout (SL = 0.00866pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2 ad4d4 ad5


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    147ns, 00866pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 113 y HA 1329 QN-08 1329 y-448 AO2222 PDF

    AO211

    Abstract: IX 3354 AO222 ND2D2
    Text: Revision History Based on Hard Copy . - First Edition(V1.0) : June 2001 • Chapter 1 : Introduction(V1.0) • Chapter 2 : DC Electrical Characteristics(V1.1) • Chapter 3 : Internal Macrocells(V2.1) • Chapter 4 : Input/Output Cells(V2.1) • Chapter 5 : Compiled Macrocells(V1.1)


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    STD131 AO211 IX 3354 AO222 ND2D2 PDF

    tl 0741

    Abstract: 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


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    STDL130 tl 0741 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor PDF

    GCK 164

    Abstract: samsung 649 ao21 OA21D
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.204ns, one fanout (SL = 0.00486pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2_lp ad2b_lp ad2bd2_lp


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    204ns, 00486pF, 048pF, 048pF ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 GCK 164 samsung 649 ao21 OA21D PDF

    MX2D2

    Abstract: OA2111 AO222 AO211 STD130 CHAPTER 1 Introduction to Power Semiconductors standard cell library samsung soc
    Text: Revision History Based on Hard Copy . - First Edition(V1.0) : June 2001 • Chapter 1 : Introduction(V1.0) • Chapter 2 : DC Electrical Characteristics(V1.1) • Chapter 3 : Internal Macrocells(V2.1) • Chapter 4 : Input/Output Cells(V2.1) • Chapter 5 : Compiled Macrocells(V3.1)


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    STD130 MX2D2 OA2111 AO222 AO211 STD130 CHAPTER 1 Introduction to Power Semiconductors standard cell library samsung soc PDF

    Untitled

    Abstract: No abstract text available
    Text: X2 Frequency Multiplier 50Ω FD-2+ Output 10 to 1000 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Input Power* 200mW * Input is at Male BNC Permanent damage may occur if any of these limits are exceeded.


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    200mW M131858 PDF

    Untitled

    Abstract: No abstract text available
    Text: X2 Frequency Multiplier 50Ω FD-2 Output 10 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Input Power* 200mW * Input is at Male BNC • wideband, 10 to 1000 MHz • low conversion loss, 13.5 dB typ.


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    200mW M96953 PDF

    TDA 9361 PS

    Abstract: tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088
    Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device


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    STD130 STD130 24nW/MHz ARM920T/ARM940T, TDA 9361 PS tda 2974 LD5Q ci 8602 gn block diagram TDA 2265 5.1 AUDIO AMP TDA 2030 TDA 7877 TDA 0200 circuit TDA 9594 TDA 2088 PDF

    TC200G02 toshiba

    Abstract: TC200G70 bt816 cnh 743 YMUX24H toshiba TC200 CNH 532 TC200E240 Transistor AC 51 0865 75 834 BT16ODFS
    Text: ASIC DATA BOOK TC200G/E SERIES MACROCELLS Non-liner Delay Models 1997 ASIC Data Book TC200G/E SERIES MACROCELLS (Non-linear Delay Models) Published in July, 1996 Document ID: 451V1CA (C) Copyright 1996 TOSHIBA Corporation All Rights Reserved The information contained herein is subject to change without notice. The


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    TC200G/E 451V1CA TC200G02 toshiba TC200G70 bt816 cnh 743 YMUX24H toshiba TC200 CNH 532 TC200E240 Transistor AC 51 0865 75 834 BT16ODFS PDF

    CTC 880

    Abstract: vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


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    STD111 CTC 880 vhdl coding for analog to digital converter design pure "sine wave" power inverter PURE SINE WAVE inverter schematic diagram sine wave inverter using pic 16C450 16C550 ARM920T ARM940T IEEE1284 PDF

    FD2S

    Abstract: STD80 74XX STDL80 STDM80 half adder 74xx FD1S IVCD11 transistor 131 74xx ttl
    Text: Intrduction to STD80/STDM80 1 Table of Contents Library Description. 1-1 Features. 1-1


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    STD80/STDM80 FD2S STD80 74XX STDL80 STDM80 half adder 74xx FD1S IVCD11 transistor 131 74xx ttl PDF

    74ls82

    Abstract: 74245 BIDIRECTIONAL BUFFER IC 74ls150 ph 4531 diode 4583 dual schmitt trigger ic D flip flop 7474 74245 BUFFER IC ic 7483 BCD adder data sheet ic 74139 Quad 2 input nand gate cd 4093
    Text: General Features The SCxD4 series of high perform ance CM O S gate arrays offers the user the ability to realise custom ised VLSI inte­ grated circuits featuring the speed perform ance previously obtainable only with bipo lar tech nolog ies whilst retaining all


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    PDF

    transistor nd8

    Abstract: BT4R ISB28000 bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24
    Text: ISB28000 SERIES HCMOS EMBEDDED ARRAY PRELIMINARY DATA FEATURES Combines Standard Cell features with Sea Of Gates time to market. 0.7 micron triple layer metal HCMOS process featuring self-aligned twin tub N and P wells, low resistance polysilicide gates and thin metal oxide.


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    ISB28000 transistor nd8 BT4R bt8c pMOS NAND GATE MUX21L AN720 BUT12 BUT18 BUT24 PDF

    3,6v sl-386

    Abstract: transistor SL-100 tda 9592 FD6S ao21 KG80 KGM80 equivalent transistor S 2000N CL 473 kt 501
    Text: D • A • T • A • B • O • O • K KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library April 1997 V SAMSUNG SAMSUNG ASIC KG80/KGM80 0.5µm 5V/3.3V Gate Array Cell Library Data Book  1997 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior


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    KG80/KGM80 3,6v sl-386 transistor SL-100 tda 9592 FD6S ao21 KG80 KGM80 equivalent transistor S 2000N CL 473 kt 501 PDF

    Untitled

    Abstract: No abstract text available
    Text: M T C - 2 2 0 0 0 C M O S 0 .7 n Standard Cell Family Services CMOS Family Features • Technology: CMOS 0 .7 m icron, double or triple la y e r m etal digital or m ix e d a n a lo g /d ig ita l processes, featu rin g self­ aligned tw in tub N an d P w ells, polycide or polysilicon


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    I08CR 08SCR PDF

    inverter PURE SINE WAVE schematic diagram

    Abstract: sine wave inverter schematic IVT HS 400 PURE SINE WAVE inverter schematic diagram sine wave inverter using pic schematic diagram ac-dc inverter tda 12155 r 4366 1 phase pure sine wave inverter schematic oa31 diode CL-21 capacitor
    Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5


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    MDL110 STD110 inverter PURE SINE WAVE schematic diagram sine wave inverter schematic IVT HS 400 PURE SINE WAVE inverter schematic diagram sine wave inverter using pic schematic diagram ac-dc inverter tda 12155 r 4366 1 phase pure sine wave inverter schematic oa31 diode CL-21 capacitor PDF

    FF55

    Abstract: FD2S
    Text: X2 FD-2+ FD-2 Frequency Multiplier 50Ω Output 10 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Input Power* 200mW * Input is at Male BNC Permanent damage may occur if any of these limits are exceeded.


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    200mW 2002/95/EC) M113397 FF55 FD2S PDF

    Untitled

    Abstract: No abstract text available
    Text: Doubler Frequency Multiplier 50Ω Output 10 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Input Power* FD-2 200mW * Input is at Male BNC • wideband, 10 to 1000 MHz • rugged shielded case


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    200mW M96953 PDF

    j-k flip flop clock toggle

    Abstract: d flip flop datasheet d flip flop Q 371 Transistor sck 084 SCK 084 056 sl 100 transistor STD150 FD4S
    Text: FLIP-FLOPS Cell List Cell Name Function Description FD1 D Flip-Flop with 1X Drive FD1D2 D Flip-Flop with 2X Drive FD1D4 D Flip-Flop with 4X Drive FD1CS D Flip-Flop with Scan Clock, 1X Drive FD1CSD2 D Flip-Flop with Scan Clock, 2X Drive FD1CSD4 D Flip-Flop with Scan Clock, 4X Drive


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    STD150 j-k flip flop clock toggle d flip flop datasheet d flip flop Q 371 Transistor sck 084 SCK 084 056 sl 100 transistor STD150 FD4S PDF

    AO331

    Abstract: ha 1452 Y 335 STDH150 nr2d2 FD2S
    Text: Appendix Maximum Fanouts C Appendix C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.073ns, one fanout (SL = 0.00412pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2


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    073ns, 00412pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 AO331 ha 1452 Y 335 STDH150 nr2d2 FD2S PDF

    TAG 8734

    Abstract: samsung 922 pinout schematic diagram display samsung transistor equivalent book FOR A 1941 samsung schematics processor samsung inverter board 7429 TTL HERCULES Graphics Controller lem HA 10000 LPG CRT Power Supply
    Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2


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    STD130 TAG 8734 samsung 922 pinout schematic diagram display samsung transistor equivalent book FOR A 1941 samsung schematics processor samsung inverter board 7429 TTL HERCULES Graphics Controller lem HA 10000 LPG CRT Power Supply PDF