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    NUMONYX NOR FLASH Search Results

    NUMONYX NOR FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54F02/BCA Rochester Electronics LLC NOR GATE; QUAD 2-INPUT Visit Rochester Electronics LLC Buy
    911HM Rochester Electronics LLC OR/NOR Visit Rochester Electronics LLC Buy
    54AC02/QCA Rochester Electronics LLC 54AC02 - Quad 2-Input NOR Gate Visit Rochester Electronics LLC Buy
    SN74HC4078AD Rochester Electronics LLC 74HC4078 - 8 Input NOR/OR Gate Visit Rochester Electronics LLC Buy

    NUMONYX NOR FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PF38F4060M0Y3DF

    Abstract: PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF
    Text: product line card Numonyx NOR flash memory Numonyx NOR flash memory for wireless applications A wide selection of NOR plus RAM multi-chip package offerings, and NOR only packages N u m on y x M S t r a t a f l a s h ® C e l l u l a r M e m or y NOR Density


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    PDF 1024Mb PF58F0062M0Y1BF 105ball PF58F0033M0Y0BF x1x16 80Ball M36A0W5040B/ M36A0W5030B/ PF38F4060M0Y3DF PF38F3040 PF38F5060M0Y0CF m36w0r6050u PF48F6000M0Y1BH M36W0R5040 PF38F5070M0Y1EE M36W0T5040 Pf38f3050m0y0Ce PF38F3050M0Y3DF

    MX29GL256

    Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
    Text: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes


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    PDF AT49SV163D 48-Pin 48-Ball S29AS016J EN29SL800 S29AS00gest MX29GL256 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D

    PF38F4050L0ZTQ0

    Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit


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    PDF L18/L30 768-Mbit 256-Mbit 64-Mbit 16-Mbit PF38F4050L0ZTQ0 PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18

    PF38F4470LLyBB0

    Abstract: numonyx 106 ball numonyx 107-ball 8 to 256 decoder using 4 t0 16 decoders
    Text: Numonyx StrataFlash Wireless Memory L18 512-Mbit LX Family with LPSDRAM (x16) Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128- or 256-Mbit — LPSDRAM die density: 128- or 256-Mbit — Async SRAM die density: 8-Mbit


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    PDF 512-Mbit 256-Mbit x32SH x16SB x16/x32 PF38F4470LLyBB0 numonyx 106 ball numonyx 107-ball 8 to 256 decoder using 4 t0 16 decoders

    numonyx 106 ball

    Abstract: strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 512-Mbit LX Family with LPSDRAM (x32) Datasheet Product Features „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration — 32-bit bus width


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    PDF L18/L30 512-Mbit 256-Mbit 32-bit 16-Mbit x32SH x16SB x16/x32 numonyx 106 ball strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18

    Numonyx admux

    Abstract: JZ58F0101M0Y0GE SCSP M18 JZ58F0085M0Y0GF numonyx nand flash Intel nor flash 1024-Mbit PSRAM Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Cellular Memory M18 M18 SCSP Family with Synchronous PSRAM, x16 Shared Bus, 10x10 PoP Ballout Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash Die Density: 512Mbit-1Gbit — PSRAM Die Density: 128-256Mbit


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    PDF 10x10 512Mbit-1Gbit 128-256Mbit 104-Ball 512Mb 133Mhz 133Mhz Numonyx admux JZ58F0101M0Y0GE SCSP M18 JZ58F0085M0Y0GF numonyx nand flash Intel nor flash 1024-Mbit PSRAM Numonyx StrataFlash M18

    numonyx 106 ball

    Abstract: numonyx 107-ball Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18 SCSP 768-Mbit L18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 128 or 256-Mbit — PSRAM Die Density: 32 or 64-Mbit — x16 Non-Mux or ADMux I/O Interface Option


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    PDF 768-Mbit 256-Mbit 64-Mbit 11x13 numonyx 106 ball numonyx 107-ball Numonyx StrataFlash M18

    strataflash 512mbit

    Abstract: FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F
    Text: Numonyx Wireless Flash Memory W18 Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz (zero wait states) — 60 ns Initial access read speed — 11 ns Burst mode read speed — 20 ns Page mode read speed


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    PDF 128-Bit x32SH x16SB x16/x32 strataflash 512mbit FLASH MEMORY 38F FLASH MEMORY 48F transistor w18 57 small Intel SCSP transistor R13 P2F

    JS28F128M29EWL

    Abstract: JS28F064M29 JS28F128M29 JS28F128M29EWH M29EWT JS28F064 M29EWB JR28F032M29EWT JR28F064M29EW JS28F128M29EW
    Text: Numonyx Axcell M29EW Datasheet 128-Mbit, 64-Mbit, 32-Mbit x8 / x16, page read 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read


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    PDF M29EW 128-Mbit, 64-Mbit, 32-Mbit 256-word 128Mbit: 64Mbit: -flash/parallel-nor-flash/js28f064m29ewha JS28F128M29EWL JS28F064M29 JS28F128M29 JS28F128M29EWH M29EWT JS28F064 M29EWB JR28F032M29EWT JR28F064M29EW JS28F128M29EW

    Stacked 4MB NOR FLASH & SRAM with AD multiplexed

    Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
    Text: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed


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    PDF x32SH x16SB x16/x32 Stacked 4MB NOR FLASH & SRAM with AD multiplexed FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball

    JS28F256m

    Abstract: js28f256m29 JS28F512 256M29EWH
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F256m js28f256m29 JS28F512 256M29EWH

    FLASH MEMORY 38F

    Abstract: 128M NAND Flash Memory 8857H 28F128W30 28F320W30 28F640W30 48F4400 numonyx 106 ball Numonyx Embedded Flash Memory strataflash 512mbit
    Text: Numonyx Wireless Flash Memory W30 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features „ „ „ „ High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed


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    PDF 28F640W30, 28F320W30, 28F128W30 x32SH x16SB x16/x32 FLASH MEMORY 38F 128M NAND Flash Memory 8857H 28F128W30 28F320W30 28F640W30 48F4400 numonyx 106 ball Numonyx Embedded Flash Memory strataflash 512mbit

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL

    Numonyx admux

    Abstract: PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h
    Text: Numonyx Wireless Flash Memory W18 SCSP 128-Mbit W18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option


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    PDF 128-Mbit 128-Mbit 32-Mbit x32SH x16SB x16/x32 Numonyx admux PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h

    JS28F256M29EWL

    Abstract: JS28F00AM29EWH JS28F512M29EWL JS28F512m29ewh PC28F512M29EWH js28f256m29ewh JS28F00AM29EWL PC28F00AM29EWL PC28F256M29EWL M29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit x8 / x16, page, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    PDF M29EW 256-Mbit, 512-Mbit, 100ns 512-word 48MB/s) Kbytes/64 512-Mbit JS28F256M29EWL JS28F00AM29EWH JS28F512M29EWL JS28F512m29ewh PC28F512M29EWH js28f256m29ewh JS28F00AM29EWL PC28F00AM29EWL PC28F256M29EWL

    PF38F4060M

    Abstract: PF38F4060 Numonyx StrataFlash M18 2N 8904 PF38F4060M0Y0B BU 3150 PF48F6000M0Y0BE Numonyx admux PF48F4000M0Y0CE W250 A1A
    Text: Numonyx StrataFlash Cellular Memory M18 Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


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    PDF 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 PF38F4060M PF38F4060 Numonyx StrataFlash M18 2N 8904 PF38F4060M0Y0B BU 3150 PF48F6000M0Y0BE Numonyx admux PF48F4000M0Y0CE W250 A1A

    Untitled

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


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    PDF M18-90nm/65nm) 512-Mbit 16-bit

    emmc pin

    Abstract: emmc 5.0 samsung eMMC 5.0 221 ball eMMC memory emmc controller emmc jedec mechanical standard data retention samsung eMMC NUMONYX emmc eMMC slc mode NAND08GAH
    Text: NAND114AQA5M 1-Gbit, demux I/O OneNAND , 1-Gbyte NAND with MMC™ interface & 1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • MCP (multichip package) – 1-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 1-Gbit (x32) DDR LPSDRAM


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    PDF NAND114AQA5M LFBGA199 emmc pin emmc 5.0 samsung eMMC 5.0 221 ball eMMC memory emmc controller emmc jedec mechanical standard data retention samsung eMMC NUMONYX emmc eMMC slc mode NAND08GAH

    WP1F

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


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    PDF M18-90nm/65nm) 512-Mbit 16-bit x32SH x16SB x16/x32 8x10x1 PF48F3000M0Y0QE WP1F

    PF38F4060M

    Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


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    PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte PF38F4060M PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901

    M29EWH

    Abstract: M29EWL JS28F064M29 JS28F128M29EWL JS28F128M29EWH JR28F064M29EW JS28F064 001FFFF JS28F128M numonyx 106 ball
    Text: Numonyx Axcell M29EW Datasheet 128-Mbit, 64-Mbit, 32-Mbit x8 / x16, page read 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read


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    PDF M29EW 128-Mbit, 64-Mbit, 32-Mbit 256-word 128Mbit: 64Mbit: M29EWH M29EWL JS28F064M29 JS28F128M29EWL JS28F128M29EWH JR28F064M29EW JS28F064 001FFFF JS28F128M numonyx 106 ball

    WP1F

    Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


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    PDF M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 8x10x1 WP1F BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C

    m36w0r6050u

    Abstract: m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M36W0R6040U4 M69KM024A ADQ14 M69KM048A ADQ15
    Text: M36W0Rx0x0UL4 32- or 64-Mbit mux I/O, multiple bank, multilevel, burst flash memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP Features • ■ ■ Multichip package – 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit (4 Mbit x 16) mux I/O multiple bank, multilevel, burst) flash memory


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    PDF M36W0Rx0x0UL4 64-Mbit 32-Mbit M36W0R5040U4: 8828h M36W0R5040L4: 8829h M36W0R6040U4 M36W0R6050U4: 88C0h m36w0r6050u m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M69KM024A ADQ14 M69KM048A ADQ15