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    onsemi NTMFS4841NHT3G

    MOSFET N-CH 30V 8.6A/59A 5DFN
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    NTMFS4841NHT3G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NTMFS4841NHT3G On Semiconductor Power MOSFET 30 V, 57 A, Single N-Channel Original PDF

    NTMFS4841NHT3G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4841NH

    Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D 4841NH mosfet 4841NH 4841N 090nh NTMFS4841NHT1G

    4841NH

    Abstract: 4841N SO8FL mosfet 4841NH NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Device*


    Original     		PDF NTMFS4841NH NTMFS4841NH/D 4841NH 4841N SO8FL mosfet 4841NH NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G

    4841NH

    Abstract: 4841N NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D 4841NH 4841N NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH

    4841nh

    Abstract: NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Device*


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D 4841nh NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH

    mosfet 4841NH

    Abstract: No abstract text available
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D mosfet 4841NH

    4841Nh

    Abstract: No abstract text available
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Device*


    Original     		PDF NTMFS4841NH NTMFS4841NH/D 4841Nh

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D