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    NTMFS4 Price and Stock

    Rochester Electronics LLC NTMFS4744NT1G

    MOSFET N-CH 30V 7A 5DFN
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    DigiKey NTMFS4744NT1G Bulk 153,685 952
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    Flip Electronics NTMFS4C029NT3G-01

    N-Channel 30 V 15A (Ta), 46A (Tc
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTMFS4C029NT3G-01 Bulk 34,900 1,000
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    onsemi NTMFS4C025NT3G

    MOSFET N-CH 30V 20A/69A 5DFN
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    DigiKey NTMFS4C025NT3G Reel 5,000 5,000
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    Flip Electronics NTMFS4C025NT3G 1,712
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    onsemi NTMFS4C906NBT3G

    TRENCH 6 30V NCH
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    DigiKey NTMFS4C906NBT3G Reel 5,000 5,000
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    onsemi NTMFS4C822NAT3G

    TRENCH 6 30V NCH
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    DigiKey NTMFS4C822NAT3G Reel 5,000 5,000
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    Richardson RFPD NTMFS4C822NAT3G 1
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    Find more NTMFS4 price and stock on Findchips.com

    NTMFS4 Datasheets (233)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NTMFS4108N On Semiconductor Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4108NT1G On Semiconductor Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Package; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 Original PDF
    NTMFS4108NT1G On Semiconductor Transistor Mosfet N-CH 30V 25A 8SO-8 FL T/R Original PDF
    NTMFS4108NT3G On Semiconductor Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Package; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 5000 Original PDF
    NTMFS4108NT3G On Semiconductor Transistor Mosfet N-CH 30V 25A 8SO-8 FL T/R Original PDF
    NTMFS4119N On Semiconductor Power MOSFET 30 V, 30 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4119NT1G On Semiconductor Power MOSFET 30 V, 30 A, Single N-Channel SO-8 Flat Lead; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 Original PDF
    NTMFS4119NT1G On Semiconductor Transistor Mosfet N-CH 30V 20A 8SO-8 FL T/R Original PDF
    NTMFS4119NT3G On Semiconductor Power MOSFET 30 V, 30 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4120N On Semiconductor Power MOSFET 30 V, 31 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4120NT1G On Semiconductor Transistor Mosfet N-CH 30V 16A 8SO-8 FL T/R Original PDF
    NTMFS4120NT3G On Semiconductor Transistor Mosfet N-CH 30V 16A 8SO-8 FL T/R Original PDF
    NTMFS4121N On Semiconductor Power MOSFET 30 V, 29 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4121NT1G On Semiconductor Transistor Mosfet N-CH 30V 15A 8SO FL T/R Original PDF
    NTMFS4121NT3G On Semiconductor Transistor Mosfet N-CH 30V 15A 8SO FL T/R Original PDF
    NTMFS4122N On Semiconductor Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4122NT1G On Semiconductor Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 Original PDF
    NTMFS4122NT1G On Semiconductor Transistor Mosfet N-CH 30V 14A 8SO-8 FL T/R Original PDF
    NTMFS4122NT3G On Semiconductor Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 5000 Original PDF
    NTMFS4122NT3G On Semiconductor Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead Original PDF
    ...

    NTMFS4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4934N

    Abstract: NTMFS4934N 362 N MOSFET NTMFS4934NT1G
    Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4934N NTMFS4934N/D 4934N 362 N MOSFET NTMFS4934NT1G

    4841NH

    Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D 4841NH mosfet 4841NH 4841N 090nh NTMFS4841NHT1G

    4939n

    Abstract: 15AID 488A
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4939N NTMFS4939N/D 4939n 15AID 488A

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4108N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 Flat Lead Package http://onsemi.com Features • Thermally and Electrically Enhanced Packaging Compatible with • • • • Standard SO−8 Package Footprint New Package Provides Capability of Inspection and Probe After


    Original     		PDF NTMFS4108N NTMFS4108N/D

    NTMFS4833N

    Abstract: NTMFS4833NT1G 4833N NTMFS4833NT3G 4833n mosfet
    Text: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices*


    Original     		PDF NTMFS4833N NTMFS4833N/D NTMFS4833N NTMFS4833NT1G 4833N NTMFS4833NT3G 4833n mosfet

    mosfet 4941n

    Abstract: NTMFS4941NT1G 4941n NTMFS4941
    Text: NTMFS4941N Power MOSFET 30 V, 47 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4941N NTMFS4941N/D mosfet 4941n NTMFS4941NT1G 4941n NTMFS4941

    mosfet 4925n

    Abstract: 4925N BFR 965 NTMFS4925NT1G
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4925N NTMFS4925N/D mosfet 4925n 4925N BFR 965 NTMFS4925NT1G

    NTMFS4121N

    Abstract: NTMFS4121NT1G NTMFS4121NT3G
    Text: NTMFS4121N Power MOSFET 30 V, 29 A, Single N−Channel, SO−8 Flat Lead Features • • • • Low RDS on Optimized Gate Charge Low Inductance SO−8 Package These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • Notebooks, Graphics Cards


    Original     		PDF NTMFS4121N NTMFS4121N/D NTMFS4121N NTMFS4121NT1G NTMFS4121NT3G

    NTMFS4747NT3G

    Abstract: NTMFS4747N NTMFS4747NT1G 44A17
    Text: NTMFS4747N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4747N NTMFS4747N/D NTMFS4747NT3G NTMFS4747N NTMFS4747NT1G 44A17

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		PDF NTMFS4H02NF NTMFS4H02NF/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		PDF NTMFS4H02N NTMFS4H02N/D

    NTMFS4C10NT1G

    Abstract: 4C10N
    Text: NTMFS4C10N Power MOSFET 30 V, 46 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4C10N NTMFS4C10N/D NTMFS4C10NT1G 4C10N

    4C06N

    Abstract: NTMFS4C06N
    Text: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4C06N NTMFS4C06N/D 4C06N NTMFS4C06N

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4C35N Power MOSFET 30 V, 80 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4C35N NTMFS4C35N/D

    mosfet 4927n

    Abstract: 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS
    Text: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4927N NTMFS4927N/D mosfet 4927n 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS

    4939n

    Abstract: mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G NTMFS4939N
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF NTMFS4939N NTMFS4939N/D 4939n mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G NTMFS4939N

    mosfet 4926n

    Abstract: 4926N NTMFS4926NT1G NTMFS4926N
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		PDF NTMFS4926N NTMFS4926N/D mosfet 4926n 4926N NTMFS4926NT1G NTMFS4926N

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4839N AND8195/D NTMFS4839N/D

    mosfet 4926n

    Abstract: No abstract text available
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		PDF NTMFS4926N NTMFS4926N/D mosfet 4926n

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N−Channel, SO−8 FL Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses


    Original     		PDF NTMFS4825NFE NTMFS4825NFE/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4985NF Power MOSFET 30 V, 65 A, Single N−Channel, SO−8 FL Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original     		PDF NTMFS4985NF NTMFS4985NF/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package


    Original     		PDF NTMFS4847N AND8195/D NTMFS4847N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		PDF NTMFS4849N AND8195/D NTMFS4849N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4841N AND8195/D NTMFS4841N/D