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    NTMFS4 Price and Stock

    onsemi NTMFS4C910NAT1G

    TRENCH 6 30V NCH
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    DigiKey NTMFS4C910NAT1G Reel 7,500 1,500
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    onsemi NTMFS4C910NBT3G

    TRENCH 6 30V NCH
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    DigiKey NTMFS4C910NBT3G Reel 5,000 5,000
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    onsemi NTMFS4C808NAT3G

    TRENCH 6 30V NCH
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    DigiKey NTMFS4C808NAT3G Digi-Reel 5,000 1
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    NTMFS4C808NAT3G Cut Tape 5,000 1
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    NTMFS4C808NAT3G Reel 5,000 5,000
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    Flip Electronics NTMFS4C808NAT3G 14,117
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    onsemi NTMFS4C029NT3G

    MOSFET N-CH 30V 15A/46A 5DFN
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    DigiKey NTMFS4C029NT3G Cut Tape 4,959 1
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    Newark NTMFS4C029NT3G Reel 5,000
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    Rochester Electronics NTMFS4C029NT3G 674 1
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    Flip Electronics NTMFS4C029NT3G 34,900
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    onsemi NTMFS4C025NT1G

    MOSFET N-CH 30V 20A/69A 5DFN
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    DigiKey NTMFS4C025NT1G Digi-Reel 1,969 1
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    NTMFS4C025NT1G Cut Tape 1,969 1
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    NTMFS4C025NT1G Reel 1,500 1,500
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    Avnet Americas NTMFS4C025NT1G Reel 45 Weeks 3,000
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    Newark NTMFS4C025NT1G Bulk 1,500
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    Bristol Electronics NTMFS4C025NT1G 220 5
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    Richardson RFPD NTMFS4C025NT1G 3,000
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    Avnet Asia NTMFS4C025NT1G 45 Weeks 3,000
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    Avnet Silica NTMFS4C025NT1G 37 Weeks 1,500
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    EBV Elektronik NTMFS4C025NT1G 47 Weeks 1,500
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    Win Source Electronics NTMFS4C025NT1G 83,000
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    Find more NTMFS4 price and stock on Findchips.com

    NTMFS4 Datasheets (233)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTMFS4108N On Semiconductor Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4108NT1G On Semiconductor Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Package; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 Original PDF
    NTMFS4108NT1G On Semiconductor Transistor Mosfet N-CH 30V 25A 8SO-8 FL T/R Original PDF
    NTMFS4108NT3G On Semiconductor Power MOSFET 30 V, 35 A, Single N-Channel SO-8 Flat Lead Package; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 5000 Original PDF
    NTMFS4108NT3G On Semiconductor Transistor Mosfet N-CH 30V 25A 8SO-8 FL T/R Original PDF
    NTMFS4119N On Semiconductor Power MOSFET 30 V, 30 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4119NT1G On Semiconductor Power MOSFET 30 V, 30 A, Single N-Channel SO-8 Flat Lead; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 Original PDF
    NTMFS4119NT1G On Semiconductor Transistor Mosfet N-CH 30V 20A 8SO-8 FL T/R Original PDF
    NTMFS4119NT3G On Semiconductor Power MOSFET 30 V, 30 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4120N On Semiconductor Power MOSFET 30 V, 31 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4120NT1G On Semiconductor Transistor Mosfet N-CH 30V 16A 8SO-8 FL T/R Original PDF
    NTMFS4120NT3G On Semiconductor Transistor Mosfet N-CH 30V 16A 8SO-8 FL T/R Original PDF
    NTMFS4121N On Semiconductor Power MOSFET 30 V, 29 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4121NT1G On Semiconductor Transistor Mosfet N-CH 30V 15A 8SO FL T/R Original PDF
    NTMFS4121NT3G On Semiconductor Transistor Mosfet N-CH 30V 15A 8SO FL T/R Original PDF
    NTMFS4122N On Semiconductor Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead Original PDF
    NTMFS4122NT1G On Semiconductor Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500 Original PDF
    NTMFS4122NT1G On Semiconductor Transistor Mosfet N-CH 30V 14A 8SO-8 FL T/R Original PDF
    NTMFS4122NT3G On Semiconductor Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 5000 Original PDF
    NTMFS4122NT3G On Semiconductor Power MOSFET 30 V, 23 A, Single N-Channel SO-8 Flat Lead Original PDF
    ...

    NTMFS4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4934N

    Abstract: NTMFS4934N 362 N MOSFET NTMFS4934NT1G
    Text: NTMFS4934N Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4934N NTMFS4934N/D 4934N 362 N MOSFET NTMFS4934NT1G PDF

    4841NH

    Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		NTMFS4841NH AND8195/D NTMFS4841NH/D 4841NH mosfet 4841NH 4841N 090nh NTMFS4841NHT1G PDF

    4939n

    Abstract: 15AID 488A
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4939N NTMFS4939N/D 4939n 15AID 488A PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4108N Power MOSFET 30 V, 35 A, Single N−Channel, SO−8 Flat Lead Package http://onsemi.com Features • Thermally and Electrically Enhanced Packaging Compatible with • • • • Standard SO−8 Package Footprint New Package Provides Capability of Inspection and Probe After


    Original     		NTMFS4108N NTMFS4108N/D PDF

    NTMFS4833N

    Abstract: NTMFS4833NT1G 4833N NTMFS4833NT3G 4833n mosfet
    Text: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices*


    Original     		NTMFS4833N NTMFS4833N/D NTMFS4833N NTMFS4833NT1G 4833N NTMFS4833NT3G 4833n mosfet PDF

    mosfet 4941n

    Abstract: NTMFS4941NT1G 4941n NTMFS4941
    Text: NTMFS4941N Power MOSFET 30 V, 47 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4941N NTMFS4941N/D mosfet 4941n NTMFS4941NT1G 4941n NTMFS4941 PDF

    mosfet 4925n

    Abstract: 4925N BFR 965 NTMFS4925NT1G
    Text: NTMFS4925N Power MOSFET 30 V, 48 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4925N NTMFS4925N/D mosfet 4925n 4925N BFR 965 NTMFS4925NT1G PDF

    NTMFS4121N

    Abstract: NTMFS4121NT1G NTMFS4121NT3G
    Text: NTMFS4121N Power MOSFET 30 V, 29 A, Single N−Channel, SO−8 Flat Lead Features • • • • Low RDS on Optimized Gate Charge Low Inductance SO−8 Package These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • Notebooks, Graphics Cards


    Original     		NTMFS4121N NTMFS4121N/D NTMFS4121N NTMFS4121NT1G NTMFS4121NT3G PDF

    NTMFS4747NT3G

    Abstract: NTMFS4747N NTMFS4747NT1G 44A17
    Text: NTMFS4747N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTMFS4747N NTMFS4747N/D NTMFS4747NT3G NTMFS4747N NTMFS4747NT1G 44A17 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		NTMFS4H02NF NTMFS4H02NF/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		NTMFS4H02N NTMFS4H02N/D PDF

    NTMFS4C10NT1G

    Abstract: 4C10N
    Text: NTMFS4C10N Power MOSFET 30 V, 46 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4C10N NTMFS4C10N/D NTMFS4C10NT1G 4C10N PDF

    4C06N

    Abstract: NTMFS4C06N
    Text: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4C06N NTMFS4C06N/D 4C06N NTMFS4C06N PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4C35N Power MOSFET 30 V, 80 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4C35N NTMFS4C35N/D PDF

    mosfet 4927n

    Abstract: 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS
    Text: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4927N NTMFS4927N/D mosfet 4927n 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS PDF

    4939n

    Abstract: mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G NTMFS4939N
    Text: NTMFS4939N Power MOSFET 30 V, 53 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		NTMFS4939N NTMFS4939N/D 4939n mosfet 4939n NTMFS4939NT1G NTMFS4939NT3G NTMFS4939N PDF

    mosfet 4926n

    Abstract: 4926N NTMFS4926NT1G NTMFS4926N
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4926N NTMFS4926N/D mosfet 4926n 4926N NTMFS4926NT1G NTMFS4926N PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTMFS4839N AND8195/D NTMFS4839N/D PDF

    mosfet 4926n

    Abstract: No abstract text available
    Text: NTMFS4926N Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives


    Original     		NTMFS4926N NTMFS4926N/D mosfet 4926n PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4825NFE Power MOSFET 30 V, 171 A, Single N−Channel, SO−8 FL Features • • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses


    Original     		NTMFS4825NFE NTMFS4825NFE/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4985NF Power MOSFET 30 V, 65 A, Single N−Channel, SO−8 FL Features • • • • • Integrated Schottky Diode Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original     		NTMFS4985NF NTMFS4985NF/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package


    Original     		NTMFS4847N AND8195/D NTMFS4847N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		NTMFS4849N AND8195/D NTMFS4849N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTMFS4841N AND8195/D NTMFS4841N/D PDF