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    NTMFS4C06N Search Results

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    NTMFS4C06N Price and Stock

    onsemi NTMFS4C06NT1G

    MOSFET N-CH 30V 11A/69A 5DFN
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    DigiKey NTMFS4C06NT1G Cut Tape 2,503 1
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    NTMFS4C06NT1G Reel 1,500 1,500
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    Mouser Electronics NTMFS4C06NT1G 81,898
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    Newark NTMFS4C06NT1G Cut Tape 1,430 1
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    Rochester Electronics NTMFS4C06NT1G 9,000 1
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    Richardson RFPD NTMFS4C06NT1G 3,000
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    Avnet Asia NTMFS4C06NT1G 10 Weeks 3,000
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    Win Source Electronics NTMFS4C06NT1G 44,900
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    onsemi NTMFS4C06NBT1G

    MOSFET N-CH 30V 20A/69A 5DFN
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    DigiKey NTMFS4C06NBT1G Digi-Reel 1,445 1
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    NTMFS4C06NBT1G Cut Tape 1,445 1
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    Rochester Electronics NTMFS4C06NBT1G 81,000 1
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    Flip Electronics NTMFS4C06NBT1G 10,500
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    onsemi NTMFS4C06NT3G

    MOSFET N-CH 30V 11A/69A 5DFN
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    onsemi NTMFS4C06NAT1G

    MOSFET N-CH 30V 11A SO8FL
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    onsemi NTMFS4C06NAT3G

    MOSFET N-CH 30V 11A/69A 5DFN
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    NTMFS4C06N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTMFS4C06NBT1G onsemi MOSFET N-CH 30V SO8FL Original PDF
    NTMFS4C06NT1G On Semiconductor NTMFS4C06 - TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Original PDF
    NTMFS4C06NT1G-001 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 11A SO8FL Original PDF
    NTMFS4C06NT3G On Semiconductor NTMFS4C06 - TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal Original PDF

    NTMFS4C06N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4C06N

    Abstract: NTMFS4C06N
    Text: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original
    NTMFS4C06N NTMFS4C06N/D 4C06N NTMFS4C06N PDF

    NTMFS4C06NT1G

    Abstract: 4C06N
    Text: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original
    NTMFS4C06N NTMFS4C06N/D NTMFS4C06NT1G 4C06N PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original
    NTMFS4C06N NTMFS4C06N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original
    NTMFS4C06N NTMFS4C06N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original
    NTMFS4C06N NTMFS4C06N/D PDF

    4C06N

    Abstract: NTMFS4C06NT1G NTMFS4C06N
    Text: NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant


    Original
    NTMFS4C06N NTMFS4C06N/D 4C06N NTMFS4C06NT1G PDF