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    NTE64 Price and Stock

    NTE Electronics Inc NTE64

    Transistor, bjt, npn,15V V(Br)Ceo,30Ma I(C),sot-100 |Nte Electronics NTE64
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    Onlinecomponents.com NTE64 232
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    Bristol Electronics NTE64 4 2
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    Quest Components NTE64 8
    • 1 $6.075
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    NTE64 3
    • 1 $6
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    NTE64 2
    • 1 $8.4795
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    NTE Electronics Inc NTE642

    Rectifier Schottky Barrier 100V 2A Fast Switching Do-214Aa Surface Mount |Nte Electronics NTE642
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    NTE Electronics Inc NTE643

    Rectifier Dual Schottky Barrier 10 Amp 200 Volt Common Cathode To220 Case |Nte Electronics NTE643
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    NTE Electronics Inc NTE644

    Rectifier Dual To-220 Common Anode Center Tap 400V 16Amp Fast Recovery Trr=150Ns |Nte Electronics NTE644
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    NTE Electronics Inc NTE6400

    Unijunction Transistor, 0.6W 50Ma To-39; Repetitive Peak Forward Current Itrm:2A; Peak Emitter Current:25Μa; Valley Current Iv:8Ma; No. Of Pins:3 Pin; Operating Temperature Max:175°C; Product Range:-; Msl:-; No. Of Pins:3Pins Rohs Compliant: Yes |Nte Electronics NTE6400
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    Quest Components NTE6400 6
    • 1 $48.555
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    TME NTE6400 10 1
    • 1 $57.8
    • 10 $45.9
    • 100 $45.9
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    Find more NTE64 price and stock on Findchips.com

    NTE64 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE64 NTE Electronics Silicon NPN Transistor UHF High Speed Switch Original PDF
    NTE6400 NTE Electronics Unijunction Transistor Original PDF
    NTE6400A NTE Electronics Unijunction Transistor Original PDF
    NTE6401 NTE Electronics Unijunction Transistor Original PDF
    NTE6401 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor UJT, Silicon Unijunction Transistor, Pkg Style TO18 Scan PDF
    NTE6402 NTE Electronics Programmable Unijunction Transistor (PUT) Original PDF
    NTE6403 NTE Electronics Integrated Circuit Silicon Bilateral Switch (SBS) Original PDF
    NTE6404 NTE Electronics Silicon Unilateral Switch (SUS) Original PDF
    NTE6407 NTE Electronics Bilateral Trigger Diode (DIAC) Original PDF
    NTE6408 NTE Electronics Bilateral Trigger Diode (DIAC) Original PDF
    NTE6409 NTE Electronics Unijunction Transistor Original PDF
    NTE6409 NTE Electronics Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor UJT, Silicon Unijunction Transistor, Pkg Style TO18 Scan PDF
    NTE6410 NTE Electronics Unijunction Transistor (UJT) Original PDF
    NTE6411 NTE Electronics Bilateral Trigger Diode (DIAC) Original PDF
    NTE6412 NTE Electronics Bilateral Trigger Diode (DIAC) Original PDF
    NTE6415 NTE Electronics Bidirectional Thyristor Diodes (SIDAC) Original PDF
    NTE6416 NTE Electronics Bidirectional thyristor diode (SIDAC). Peak off voltage 45V. Original PDF
    NTE6417 NTE Electronics Bidirectional thyristor diode (SIDAC). Peak off voltage 90V. Original PDF
    NTE6418 NTE Electronics Bidirectional thyristor diode (SIDAC). Peak off voltage 90V. Original PDF
    NTE6419 NTE Electronics Bidirectional Thyristor Diodes (SIDAC) Original PDF

    NTE64 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    low voltage scr

    Abstract: nte6403 triac phase control circuits diode all SBS thyristor
    Text: NTE6403 Integrated Circuit Silicon Bilateral Switch SBS Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate


    Original     		NTE6403 526-NTE6403 NTE6403 low voltage scr triac phase control circuits diode all SBS thyristor PDF

    NTE6400

    Abstract: NTE6400A rbbo unijunction transistor
    Text: NTE6400 & NTE6400A Unijunction Transistor TO39 Type Package Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,


    Original     		NTE6400 NTE6400A NTE6400A NTE6400 rbbo unijunction transistor PDF

    NTE6400A

    Abstract: NTE6400
    Text: NTE6400 & NTE6400A Unijunction Transistor Description: The NTE6400 & NTE6400A Silicon Unijunction Transistors are three terminal devices having a stable “N” type negative resistance characteristic over a wide temperature range. A stable peak point voltage, a low peak point current, and a high pulse pulse current make these devices useful in oscillators,


    Original     		NTE6400 NTE6400A NTE6400A NTE6400 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE6408-7 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)28 V(BO) Max. (V)36 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)


    Original     		NTE6408-7 StyleDO-204AA PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE6408 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)28 V(BO) Max. (V)36 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)


    Original     		NTE6408 StyleDO-204AM NumberTY00200003 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE6407 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)24 V(BO) Max. (V)32 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)


    Original     		NTE6407 StyleDO-204AM NumberTY00200003 PDF

    NTE64

    Abstract: No abstract text available
    Text: NTE64 Silicon NPN Transistor UHF High Speed Switch Description: The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise small–signal amplifiers and applications requiring fast switching times. Features: D High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA


    Original     		NTE64 NTE64 23dBm PDF

    applications of ujt

    Abstract: ujt transistor UJT APPLICATION applications of ujt with circuits NTE6410 ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download
    Text: NTE6410 Unijunction Transistor UJT Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified)


    Original     		NTE6410 NTE6410 300mW applications of ujt ujt transistor UJT APPLICATION applications of ujt with circuits ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download PDF

    NTE6412

    Abstract: NTE6407 NTE6408 NTE6411 DO35 VBO24
    Text: NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes DIACS Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity


    Original     		NTE6407, NTE6408, NTE6411, NTE6412 NTE6407 NTE6412 NTE6411 NTE6408 NTE6408 NTE6411 DO35 VBO24 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE6412 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)56 V(BO) Max. (V)70 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)


    Original     		NTE6412 StyleDO-204AA NumberTY00200003 PDF

    50Hz sine wave generator

    Abstract: 50hz sine generator xenon ignitor sidac ignitor xenon DIACS xenon lamp igniter NTE6416 NTE6419 Sine Wave Generator
    Text: NTE6415 thru NTE6419 Bidirectional Thyristor Diodes SIDAC Description: The NTE6415 through NTE6419 SIDAC devices are silicon bilateral voltage triggered switches with greater power handling capabilities than standard DIACs. Upon application of a voltage exceeding


    Original     		NTE6415 NTE6419 NTE6419 NTE6416 NTE6417 NTE6418 NTE6415 50Hz sine wave generator 50hz sine generator xenon ignitor sidac ignitor xenon DIACS xenon lamp igniter NTE6416 Sine Wave Generator PDF

    NTE6409

    Abstract: No abstract text available
    Text: NTE6409 Unijunction Transistor Description: The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current: 2µA Max D Low Emitter Reverse Current: 200nA Max D Passivated Surface for Reliability & Uniformity


    Original     		NTE6409 NTE6409 200nA 300mW PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE6407-92 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)24 V(BO) Max. (V)32 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)


    Original     		NTE6407-92 StyleTO-92 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE6407-7 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)24 V(BO) Max. (V)32 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)


    Original     		NTE6407-7 StyleDO-204AA PDF

    NTE6404

    Abstract: four-layer diode Silicon unilateral switch four layer diode SCR 30v
    Text: NTE6404 Silicon Unilateral Switch SUS Description: The NTE6404 is a silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an “ideal” four layer diode. The device is designed to switch at 8 volts


    Original     		NTE6404 NTE6404 175mA four-layer diode Silicon unilateral switch four layer diode SCR 30v PDF

    NTE6401

    Abstract: No abstract text available
    Text: NTE6401 Unijunction Transistor Description: The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current: 5µA Max D Low Emitter Reverse Current: .005µA (Typ) D Passivated Surface for Reliability & Uniformity


    Original     		NTE6401 NTE6401 300mW IEB20 PDF

    nte6403

    Abstract: low voltage scr triac phase control circuits triac phase control SBS thyristor
    Text: NTE6403 Integrated Circuit Silicon Bilateral Switch SBS Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate


    Original     		NTE6403 NTE6403 low voltage scr triac phase control circuits triac phase control SBS thyristor PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE64 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)350m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		NTE64 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE6411 Thyristors Diac Bidirectional Diode Thyristor V(BO) Min. (V)35 V(BO) Max. (V)45 I(S) Max. (A) I(TRM) Max. (A)2.0 @ t(w) (s) (Test Condition) I(TSM) Max. (A) @ t(w) (s) V(R) Max. (V)6.0 I(H) Max. (A) Holding Current V(TM) Max. (V) @I(T) (A) (Test Condition)


    Original     		NTE6411 StyleDO-204AA NumberTY00200003 PDF

    NTE6402

    Abstract: "Programmable Unijunction Transistor" unijunction programmable unijunction transistor
    Text: NTE6402 Programmable Unijunction Transistor PUT Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and


    Original     		NTE6402 NTE6402 "Programmable Unijunction Transistor" unijunction programmable unijunction transistor PDF

    NTE7232

    Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
    Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case


    Original     		NTE573â 201ADÂ com/specs/500to599/pdf/nte573â NTE639 214AAÂ NTE7232 NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    NTE4017B

    Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
    Text: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor


    Original     		NTE397 NTE5552 NTE859 OP27FP P6KE12CA NTE5457 NTE74C14 OP271GP P6KE15A NTE5465 NTE4017B NTE977 IRF 707 NTE7400 NTE4001B NTE5402 NTE997 P405W NTE955M PDF

    diac SBS 14

    Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
    Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation


    OCR Scan     		PDF