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    NTE Electronics Inc NTE2381

    P Channel Mosfet, -500V, 2A, To-220; Channel Type:P Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:6V; Gate Source Threshold Voltage Max:4.5V; Msl:- Rohs Compliant: Yes |Nte Electronics NTE2381
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    NTE2381 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE2381 NTE Electronics Complementary Silicon Gate MOSFET Enhancement Mode, High Speed Switch Original PDF

    NTE2381 Datasheets Context Search

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    NTE2381

    Abstract: No abstract text available
    Text: NTE2380 N–Ch & NTE2381 (P–Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch Description: The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.


    Original     		PDF NTE2380 NTE2381 NTE2381

    Untitled

    Abstract: No abstract text available
    Text: NTE2381 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)2 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original     		PDF NTE2381

    NTE2382

    Abstract: No abstract text available
    Text: POWER MOS FIELD EFFECT TRANSISTORS NTE Type Number Description 66 N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL Enhancement Mode High Speed Switch N-CHANNEL


    OCR Scan     		PDF T0220 150ns, 350ns, 110ns, 160ns NTE2382

    dual TMB 1800

    Abstract: chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET
    Text: N T E ELE CTRONICS INC SSE D bMaiSST 000Sb2S TMb BIN TE T -tt-O l DWER MOS Fi Gatato Source Cutott Voltage Volta Gate to Source Breakdown Voltage (Volt») Maximum Continuous Drain Currant (Amp*) BVosa ±20 Max >D ros(On) 12 0.18 Max case Styl« Di»g. Number


    OCR Scan     		PDF 000Sb2S NTE2381) T0220 250pA dual TMB 1800 chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET

    low voltage mosfet switch 3 amp

    Abstract: mosfet 55 nf 06 200 Amp mosfet NTE2383 NTE465 NTE2381 NTE2382 jfet pch 300 Amp mosfet dual P-Channel JFET
    Text: N T E ELECTRONICS 1? E INC DfHHfEP • ^431251 0001112 4 ClCMfl mjgJMMiB ■ ■WiMlfcJJlMBi HTE TYPE NO. DESCRIPTION AND APHJCAIWN CASE STYLE DUU HO. DRAW TO SOURCE BREAKDOWN . VOUAGE fill T-39-OJ votnæ MAX CONTINUOUS DRAIN CURRENT STATIC DRAIN TO ON SOURCE


    OCR Scan     		PDF 17EJD bM312ST 00G1112 T-39-0) NTE465) NTE464) low voltage mosfet switch 3 amp mosfet 55 nf 06 200 Amp mosfet NTE2383 NTE465 NTE2381 NTE2382 jfet pch 300 Amp mosfet dual P-Channel JFET