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    NTD3808N Search Results

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    NTD3808N Price and Stock

    onsemi NTD3808NT4G

    MOSFET N-CH 16V 12A/76A DPAK
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    DigiKey NTD3808NT4G Reel
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    Rochester Electronics NTD3808NT4G 59,025 1
    • 1 $0.2817
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    • 100 $0.2648
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    Rochester Electronics LLC NTD3808NT4G

    MOSFET N-CH 16V 12A/76A DPAK
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    DigiKey NTD3808NT4G Bulk 1,025
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    Rochester Electronics LLC NTD3808N-1G

    MOSFET N-CH 16V 12A/76A IPAK
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    DigiKey NTD3808N-1G Tube 1,158
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    onsemi NTD3808N-1G

    MOSFET N-CH 16V 12A/76A IPAK
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    DigiKey NTD3808N-1G Tube
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    Rochester Electronics NTD3808N-1G 7,275 1
    • 1 $0.2492
    • 10 $0.2492
    • 100 $0.2342
    • 1000 $0.2118
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    Rochester Electronics LLC NTD3808N-35G

    MOSFET N-CH 16V 12A/76A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTD3808N-35G Tube 1,025
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    NTD3808N Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD3808N-1G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 16V 12A IPAK Original PDF
    NTD3808N-35G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 16V 12A IPAK Original PDF
    NTD3808NT4G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 16V 12A DPAK Original PDF

    NTD3808N Datasheets Context Search

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    08NG

    Abstract: IPAK d marking code dpak transistor MARKING QG 6 PIN part marking id v marking code dpak 369D NTD3808N-1G NTD3808N-35G NTD3808NT4G
    Text: NTD3808N Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original
    PDF NTD3808N NTD3808N/D 08NG IPAK d marking code dpak transistor MARKING QG 6 PIN part marking id v marking code dpak 369D NTD3808N-1G NTD3808N-35G NTD3808NT4G

    Untitled

    Abstract: No abstract text available
    Text: NTD3808N Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original
    PDF NTD3808N NTD3808N/D