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    onsemi NTB13N10T4G

    MOSFET N-CH 100V 13A D2PAK
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    NTB13N10T4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NTB13N10T4G On Semiconductor Power MOSFET 13 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK; Package: D2PAK 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 800 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: NTB13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features http://onsemi.com • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB13N10 NTB13N10/D

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original     		PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    13n10

    Abstract: 13N10 mosfet AN569 NTB13N10 NTB13N10G NTB13N10T4 NTB13N10T4G 13n10g
    Text: NTB13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features http://onsemi.com • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB13N10 NTB13N10/D 13n10 13N10 mosfet AN569 NTB13N10 NTB13N10G NTB13N10T4 NTB13N10T4G 13n10g