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    NPN VCE0 1000V Search Results

    NPN VCE0 1000V Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation

    NPN VCE0 1000V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


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    PDF B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    lF-50A

    Abstract: No abstract text available
    Text: MG50M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Buit-in to 1 Package. . High DC Current Gain: hpE=100 Min. (Ic=50A)


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    PDF MG50M2YK1 lF-50A

    MG75M2CK1

    Abstract: tkp7
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain


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    PDF MG75M2CK1 MG75M2CK1 tkp7

    MG300M1UK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG300M1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 100 Min. (Ic=300A) . Low Saturation Voltage


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    PDF MG300M1UK1 MG300M1UK1

    ic 109b

    Abstract: MG100M2YK1 Di 762 transistor transistor B 764
    Text: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling


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    PDF MG100M2YK1 -109B ic 109b MG100M2YK1 Di 762 transistor transistor B 764

    MG150M2CK1

    Abstract: CW801
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . Power Translators and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=150A)


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    PDF MG150M2CK1 MG150M2CK1 CW801

    Untitled

    Abstract: No abstract text available
    Text: EPITAXIAL BASE - lCM UP TO 30A; VCEO UP TO 100V MAIN FEATURES • NPN and PNP types perfect complementary pairs ■ Medium switching speed ■ Medium fy (2 to 20 MHz) ■ High ruggedness THERMAL OXIDE P VAPOX Al GIAS! INTERNAL SCHEMATIC DIAGRAMS Epitaxial Base Technology is a general purpose low


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    npn 1000V 100a

    Abstract: D7ST1008 1S697 D7ST100805 D7ST1010 D7ST1012 50c020
    Text: -p W Ê R Ë X DE i T S T H t i S l IN C " m tÊ B sx. v f f U I X t A A IN O y o u Æ o / ' b ü aD02b7S T | TT _- 3333-1] R 5 D7ST1008, D7ST1010, D7ST1012 Tentative Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 NPN Power Switching


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    PDF 7214t21 T-33-15 D7ST100& D7ST1010, D7ST1012 Amperes/1000 D7ST1008/1010/1012, D7ST1008/1010/1012 D7ST1012 npn 1000V 100a D7ST1008 1S697 D7ST100805 D7ST1010 50c020

    MG300M1FK1

    Abstract: DIODE S3L DIODE TP S3L
    Text: T O SH IB A TOSHIBA GTR MODULE SEMICONDUCTOR MG300M1FK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M6 FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode


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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA TO DE § ÌCH7E5D DDltD7M 7 f~ <D I S C R E T E / O P T O 90D SEMICONDUCTOR 16074 U T - 3 3 -35' TOSHIBA GTR MODULE M G 7 5 M 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.


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    NPN VCE0 1000V

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The C o l l e c t o r i s I s o l a t e d from Case. . 2 Power T r a n s i s t o r s and 2 F re e Wheeling Diodes a r e B u i t - i n to 1 Pac kage.


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    PDF MG50M2YK1 MG25M2YK1 NPN VCE0 1000V

    Untitled

    Abstract: No abstract text available
    Text: ”TD D E|‘lUTi’riòÙUüjbbdbii I i TOSHIBA -CDISCRETE/OPTO} 90D 16351 9097250 TOSHIBA DISCRETÊ/OPTO SEMICONDUCTOR 07^33-35 TOSHIBA CTR MODULE M G 15 0 M 2 C K 1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.


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    PDF 50M2c MG150M2CK1 DT-33-35' Dy-33-35-

    MG50M2CK1

    Abstract: EGA-MG50M2CK1-1
    Text: TOSHIBA GTR MODULE TOSHIBA SEMICONDUCTOR MG50M2CK1 SILICON NPN TRIPLE DIFFUSED TYPE TECH N ICA L DATA HIGH POWER S W I T C H I N G APPLICATIONS. M O T O R CONT O R L APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling


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    PDF MG50M2CK1 EGA-MG50M2CK1-4) MG50M2CK1 EGA-MG50M2CK1-1

    Untitled

    Abstract: No abstract text available
    Text: T o s h i b a -cdiscrete/opto ~ ^ | m ? a s o 909 72 50 T O S H IB A DISCRETE/OPTO TOSHIBA emit, das b 90D 16082 SEMICONDUCTOR TOSHIBA CTR MODULE TECHNICAL DATA M G ]0 OM2 Y K 1 DT'33-35 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER Sl/ITCHING APPLICATIONS.


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    PDF MG100M2YK1

    MG50M2YK1

    Abstract: 17250 b1 10
    Text: TOSHIBA { D IS CR ET E/OPT O* _ TO 9 0 9 7 2 5 0 T O SH I BA <DISCRETE/OPTO> TOSHIBA SEMICONDUCTOR cïDcT7ES0 D O l bD bb ñ 90D 16066 DT-\33«35I TOSHIBA GTR MODULE MG50M2YK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS.


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    PDF MG50M2YK1 Z-94C1A mg50m2yk1 17250 b1 10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA ~Tü DISCRETE/OPTO Ì> F| ^0^7550 DDlblOti 5 90D 16106 SEMICONDUCTOR DT - 2 3 - 3 S ' TOSHIBA GTR MODULE M G 3 0 0 M 1 U K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.


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    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


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    PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


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    PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    Horizontal Transistor TT 2246

    Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
    Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz


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    PDF HFA1105 HFA1115 350MHz 225MHz 000V/ps 50MHz. Horizontal Transistor TT 2246 ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601