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    NPN TRIPLE DIFFUSED 60V DC CURRENT GAIN 800 Search Results

    NPN TRIPLE DIFFUSED 60V DC CURRENT GAIN 800 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRIPLE DIFFUSED 60V DC CURRENT GAIN 800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTD863 transistor

    Abstract: NPN triple diffused 60V DC current gain 800 ktd863 ktb764
    Text: SEMICONDUCTOR KTD863 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B D FEATURES A ・High Voltage : VCEO=60V Min. . ・High Current : IC(Max.)=1A. P DEPTH:0.2 ・High Transition Frequency : fT=150MHz(Typ.).


    Original     		PDF KTD863 150MHz KTB764. KTD863 transistor NPN triple diffused 60V DC current gain 800 ktd863 ktb764

    driver transistor hfe 60

    Abstract: KTB764 KTD863 KTD863 transistor
    Text: SEMICONDUCTOR KTD863 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B D FEATURES A ᴌHigh Voltage : VCEO=60V Min. . ᴌHigh Current : IC(Max.)=1A. P DEPTH:0.2 ᴌHigh Transition Frequency : fT=150MHz(Typ.).


    Original     		PDF KTD863 150MHz KTB764. driver transistor hfe 60 KTB764 KTD863 KTD863 transistor

    C3679 equivalent

    Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
    Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.


    Original     		PDF T01EE0 H1-T01EE0-0107020SB C3679 equivalent transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		PDF n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493

    c5287 equivalent transistor

    Abstract: transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		PDF 2SA1693 2SA1694 2SA1695 2SA1725 2SA1907 2SA1908 2SA1909 2SC3179 2SC3852 2SC4511 c5287 equivalent transistor transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 U nit in mm POWER AM PLIFIER APPLICATIONS • • High DC Current Gain : hpE = 800~3200 V qe = 5V, Ic = 0.2A Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.)(Ic = lA, Iß = 10mA) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD2462

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm P O W E R A M P L IF IE R A P P L IC A T IO N S • • High DC Current Gain : hF£ = 800—3200 Vc e = 5V, Ic = 0.1A Low Collector Saturation Voltage : v CE(sat) = °-3V (Typ.) (Ic = 0.5A, Iß = 5mA) M A X IM U M


    OCR Scan     		PDF 2SD2461

    2SD2353

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 POWER AMPLIFIER APPLICATIONS : hpE=800~3200 . High DC Current Gain V c e = 5V , Ic=0.2A . Low Collector Saturation Voltage : VCE(sat)=0.4 V ( T y p .) (IC=1A, lB=10mA) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL


    OCR Scan     		PDF 2SD2353 2SD2353

    2SD2461

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2461 2SD2461 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 8.0 ± 0.2 • • High DC Current Gain : hpg i = 800~3200 Low Collector Saturation Voltage : V q £ (sat) = 0.3V (Typ.) 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SD2461 2SD2461

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2352 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • High DC Current Gain • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2352 U nit in mm : h]?E = 800~3200 Low Collector Saturation Voltage : V ç e sat —0-3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD2352

    D2461

    Abstract: transistor d2461
    Text: 2SD2461 TOSHIBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2S D2461 Unit in mm Rn+n ? High DC Current Gain : hpj] i = 800~3200 Low Collector Saturation Voltage : V ^ e (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SD2461 D2461 D2461 transistor d2461

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2461 2SD2461 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm ftn + n y • • High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e (sat) = 0-3V (Typ.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD2461

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD2462 2SB1602

    2SD2353

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2353 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • 10 ±0.3 High DC Current Gain : hpE = 800~3200 Low Collector Saturation Voltage : v CE sat = °-4V (TyP-) DC Current Gain Colleetor-Emitter Saturation


    OCR Scan     		PDF 2SD2353 2SD2353

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2353 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2353 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10±0.3 • High DC Current Gain : hpg = 800~3200 • Low Collector Saturation Voltage ^3.2 ±0.2 3 O 2.7±0.2 ^ Oi ro O : VCE sat = °-4V (TyP-)


    OCR Scan     		PDF 2SD2353

    100L

    Abstract: 2SD2352
    Text: TO SH IBA 2SD2352 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2352 Unit in mm High DC Current Gain : hpE = 800~3200 Low Collector Saturation Voltage : V q e sa t “ 0.3V (Typ.) MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		PDF 2SD2352 100L 2SD2352

    2SD2461

    Abstract: No abstract text available
    Text: 2SD2461 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e ( s a t ) “ 0.3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD2461 2SD2461

    Untitled

    Abstract: No abstract text available
    Text: 2SD2352 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS Unit in mm 10± 0 .3 . High DC Current Gain : hFE=800~3200 V c e =5V, 0 3 .2 ± 0.2 2.7 _ —± 0 . 2 Ic = 0.1A . Low Collector Saturation Voltage : V CE(sat)=0.3V(Typ.) (IC =0.5A, lB=5mA)


    OCR Scan     		PDF 2SD2352

    2SD2461

    Abstract: No abstract text available
    Text: 2SD2461 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm 8.0 ± 0.2 • • High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e ( s a t ) “ 0.3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SD2461 2SD2461

    2SB1602

    Abstract: 2SD2462
    Text: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602


    OCR Scan     		PDF 2SD2462 2SB1602 2SD2462

    2SB1602

    Abstract: 2SD2462
    Text: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602


    OCR Scan     		PDF 2SD2462 2SB1602 2SD2462

    d2462

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D 24 62 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800^3200 Low Collector Saturation Voltage : VCE (sat) = °-4V (TyP*) Complementary to 2SB1602 •


    OCR Scan     		PDF 2SD2462 2SB1602 d2462

    2SD2352

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2352 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2352 Unit in mm PO W ER AM PLIFIER APPLICATIONS 10 ±0.3 • High DC Current Gain : hp^ —800~3200 • Low Collector Saturation Voltage : V q £ sat = 0.3V (Typ.) ^3.2 ±0.2 "P o O 1.1


    OCR Scan     		PDF 2SD2352 2SD2352

    2SC510

    Abstract: 2SC5102 2SC510-2SC512 2SC510 X 2SC512
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DE J ^ D ^ S O 56L DISCRETE/OPTO J 7 41 d U D0D7mfl 1 'T‘~ 3 J~ e * 2SC51Ö " i2SC512i SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) Unit in nun HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.


    OCR Scan     		PDF 2SC51Ö i2SC512i 2SC510) 2SC512) 800mW 2SA510 2SA512. 2SC510 2SC510 2SC5102 2SC510-2SC512 2SC510 X 2SC512