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    NPN TRANSISTOR COLLECTOR BASE AND EMITTER 100V Search Results

    NPN TRANSISTOR COLLECTOR BASE AND EMITTER 100V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR COLLECTOR BASE AND EMITTER 100V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CMPT2222

    Abstract: CMPT2222A CMPT2222AE X10-4
    Text: Central CMPT2222AE ENHANCED SPECIFICATION NPN SILICON TRANSISTOR ENHANCED SPECIFICATION MAXIMUM RATINGS: TA=25°C ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature


    Original     		CMPT2222AE CMPT2222AE CMPT2222A OT-23 150mA, X10-4 CMPT2222 X10-4 PDF

    2N3055HV

    Abstract: transistor 2N3055hv
    Text: Transys Electronics L I M I T E D 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Open Emitter Collector Emitter Voltage (Open Base) Emitter Base Voltage


    Original     		2N3055HV 2N3055HV transistor 2N3055hv PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CSD1281 DPAK TO-252 Plastic Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage


    Original     		CSD1281 O-252) C-120 CSD1281Rev250904E PDF

    2SD814

    Abstract: 2SD814A
    Text: Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features Collector to 2SD814 base voltage 2SD814A Collector to 2SD814 Emitter to base voltage VEBO Peak collector current


    Original     		2SD814, 2SD814A 2SD814 2SD814 2SD814A PDF

    2SD667

    Abstract: transistor 2sd667 2SD6677 2SD667-2SD667A 2SD667A 2SD667 equivalent
    Text: 2SD667-2SD667A 2SD667, 2SD667A TO-92MOD TRANSISTOR NPN FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: 1 A Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 123


    Original     		2SD667-2SD667A 2SD667, 2SD667A O-92MOD 2SD6677 2SD667 150mA 500mA 2SD667 transistor 2sd667 2SD6677 2SD667-2SD667A 2SD667A 2SD667 equivalent PDF

    3DD13002

    Abstract: 3DD13002B
    Text: 3DD13002/B 3DD13002/ 3DD13002B TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 900 mW (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3. BASE 3DD13002: 1 A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range


    Original     		3DD13002/B 3DD13002/ 3DD13002B 3DD13002: 3DD13002B: 200mA, 100mA 3DD13002 3DD13002B PDF

    Untitled

    Abstract: No abstract text available
    Text: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : KSE180 : KSE181 : KSE182 Collector-Emitter Voltage


    Original     		KSE180/181/182 KSE180 KSE181 KSE182 O-126 PDF

    MJE180

    Abstract: MJE181 MJE182
    Text: MJE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : MJE180 : MJE181 : MJE182 Collector-Emitter Voltage


    Original     		MJE180/181/182 O-126 MJE180 MJE181 MJE182 MJE180 MJE181 MJE182 PDF

    3dd13003

    Abstract: No abstract text available
    Text: 3DD13003 3DD13003 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. BASE Collector current ICM: 1.5 A Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃


    Original     		3DD13003 O-126 1000mA 1000mA, 250mA 100mA 3dd13003 PDF

    to-126 transistor

    Abstract: 3DD13002 ib40
    Text: 3DD13002 3DD13002 TO-126 TRANSISTOR NPN FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1.BASE Collector current ICM: 1 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 2.COLLECTOR 3.EMITTER 123 TJ, Tstg: -55℃ to +150℃


    Original     		3DD13002 O-126 200mA, 100mA to-126 transistor 3DD13002 ib40 PDF

    3dd13003

    Abstract: TRANSISTOR npn ic 1000ma
    Text: 3DD13003 3DD13003 TO-220 TRANSISTOR NPN FEATURES Power dissipation PCM: 1. BASE 1.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 700 V Operating and storage junction temperature range 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃


    Original     		3DD13003 O-220 1000mA, 250mA 100mA, 3dd13003 TRANSISTOR npn ic 1000ma PDF

    CSD73

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company CSD73 NPN SILICON EPITAXIAL POWER TRANSISTOR TO - 220 Plastic Package Low Frequency High Power Amplifier ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector - Base Voltage Collector- Emitter Voltage


    Original     		ISO/TS16949 CSD73 C-120 CSD73070801 CSD73 PDF

    3DD13002

    Abstract: No abstract text available
    Text: 3DD13002 3DD13002 TO-251 TRANSISTOR NPN FEATURES Power dissipation PCM: 1.25 1. BASE W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		3DD13002 O-251 200mA, 100mA 3DD13002 PDF

    ic 41b

    Abstract: npn 41A TIP41A equivalent TIP41C TIP41A TIP41B 8041A
    Text: TIP41A/41B/41C TIP41A/41B/41C TO-220 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: 6 A Collector-base voltage V(BR)CBO: TIP41A : 60 V TIP41B : 80 V TIP41C : 100 V Operating and storage junction temperature range


    Original     		TIP41A/41B/41C O-220 TIP41A TIP41B TIP41C ic 41b npn 41A TIP41A equivalent TIP41C TIP41A TIP41B 8041A PDF

    TIP120

    Abstract: TIP121 TIP122 equivalent of TIP122 tip121 darlington TRANSISTOR tip122 transistor tip120 tip12 transistor tip121 darlington transistor NPN
    Text: TIP120/121/122 TIP120, 121, 122 Darlington TRANSISTOR NPN TO-220 FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: 5 A Collector-base voltage TIP120: 60 V V(BR)CBO: TIP121: 80 V TIP122: 100 V Operating and storage junction temperature range


    Original     		TIP120/121/122 TIP120, O-220 TIP120: TIP121: TIP122: TIP120 TIP121 TIP120 TIP121 TIP122 equivalent of TIP122 tip121 darlington TRANSISTOR tip122 transistor tip120 tip12 transistor tip121 darlington transistor NPN PDF

    2N3772

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D 2N3772 NPN SILICON PLANAR POWER TRANSISTOR TO-3 Metal Can Package Designed for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage Collector Emitter Voltage


    Original     		2N3772 2N3772 PDF

    2SD1788

    Abstract: ITO-220
    Text: SavantIC Semiconductor Product Specification 2SD1788 Silicon NPN Power Transistors DESCRIPTION •With ITO-220 package ·Switching power transistor ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol


    Original     		2SD1788 ITO-220 ITO-220) 2SD1788 PDF

    BD233

    Abstract: BD237 bd237 equivalent BD237-10 BD235
    Text: BD233/235/237 BD233/235/237 TRANSISTOR NPN TO-126 FEATURES 1. EMITTER Power dissipation PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 2 A Collector-base voltage BD233 : 45 V V(BR)CBO: BD235: 60 V BD237: 100 V Operating and storage junction temperature range


    Original     		BD233/235/237 O-126 BD233 BD235: BD237: BD235 BD237 BD233 BD237 bd237 equivalent BD237-10 BD235 PDF

    TIP112

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. TIP112 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low-speed switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter


    Original     		TIP112 O-220AB TIP112 PDF

    2N1893

    Abstract: 100khz 5v transistor npn
    Text: 2N NPN SILICON PLANAR EPITAXIAL TRANSISTOR rv/ii CASE TO-39 2N1893 is an NPN silicon planar epitaxial transistor designed for audio amplifier output stage and medium power industrial applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		2N1893 500mA 800mW 0Q33G3, 20MHz 100kHz 100khz 5v transistor npn PDF

    2N3055HV

    Abstract: transistor 2N3055hv
    Text: 2N3055HV 2N3055HV NPN POWER TRANSISTOR Switching Regulator and Power Amplifier Applications DIM A B C D E F G H J K L M MIN - 6,35 0,96 29,90 10,69 5.20 16,64 11,15 - 3,84 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)


    OCR Scan     		2N3055HV 2N3055HV transistor 2N3055hv PDF

    TS 4142

    Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142
    Text: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		0075T4 T-33- KSD288 TS 4142 LC04A KSD73 100V transistor npn 5a ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142 PDF

    transistor dc 558 npn

    Abstract: No abstract text available
    Text: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIG N ED FOR LOW POW ER AUDIO AM PLIFIER AND LOW CURRENT HIGH SP E E D SWITCHING APPLICATIONS ABSO LU TE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage: KSE180 : KSE181 : KSE182 Collector-Emitter Voltage


    OCR Scan     		KSE180/181/182 KSE180 KSE181 KSE182 150mA 600mA 500mA transistor dc 558 npn PDF

    transistor 2n5330

    Abstract: transistor c63 NPN Transistor VCEO 80V 100V
    Text: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)


    OCR Scan     		203mm) 40MHz 40MHz 300pF transistor 2n5330 transistor c63 NPN Transistor VCEO 80V 100V PDF