NPN SILICON EPITAXIAL PLANAR TRANSISTOR TO92 Search Results

NPN SILICON EPITAXIAL PLANAR TRANSISTOR TO92 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

NPN SILICON EPITAXIAL PLANAR TRANSISTOR TO92 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC’s advanced technology to provide the customers with high DC	Original	TC200 TC200 TC200L-x-T92-B TC200G-x-T92-B TC200L-x-T92-K TC200G-x-T92-K QW-R201-087	PDF
motorola p1f Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for	Original	OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363	PDF
2N2222 MPS2222 npn transistor Abstract: transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for	Original	PZT651T1 inch/1000 PZT651T3 inch/4000 P218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N2222 MPS2222 npn transistor transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola	PDF
Untitled Abstract: No abstract text available Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS COLOR TV HORIZ. DRIVER APPLICATIONS COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES High Voltage :V BR CEO= 300V	Original	2SC2482 O-92NL 100ms* 500ms* QW-R211-015	PDF
Untitled Abstract: No abstract text available Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS COLOR TV HORIZ. DRIVER APPLICATIONS COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES High Voltage :V BR CEO= 300V	Original	2SC2482 O-92NL QW-R211-015	PDF
2SC2482 Abstract: common collector amplifier applications ce20v vc20e Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS COLOR TV HORIZ. DRIVER APPLICATIONS COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES High Voltage :V BR CEO= 300V	Original	2SC2482 O-92NL QW-R211-015 2SC2482 common collector amplifier applications ce20v vc20e	PDF
NTE107 Abstract: NPN Transistor TO92 NPN Silicon Epitaxial Planar Transistor to92 equivalent nte107 Text: NTE107 Silicon NPN Transistor UHF Oscillator for Tuner Description: The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners.	Original	NTE107 NTE107 100MHz 60MHz, NPN Transistor TO92 NPN Silicon Epitaxial Planar Transistor to92 equivalent nte107	PDF
transistor 3569 Abstract: 3569 pN3569 Text: M NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit ching applications for collector current up to 500mA. MECHANICAL OUTLINE	OCR Scan	500mA. O-92A Vcb-40V Ta-75Â 150mA IB-15mA Ic-150Â BOXfc9477 VCE-10V transistor 3569 3569 pN3569	PDF
Untitled Abstract: No abstract text available Text: M PN 3569 NPN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EI_EC;-rRCDIXIIC3S GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit ching applications for collector current up to 500mA. MECHANICAL OUTLINE	OCR Scan	500mA. O-92A 150mA 15fflA f-20Mc 300uS,	PDF
3094 transistor Abstract: BF422 BF423 OQJ300 Text: BF422 NPN SILICON M 1C R D PLANAR HIGH EPITAXIAL VOLTAGE TRANSISTOR El— ECTRCDINIICIIS MECHANICAL OUTLINE TO-92B GENERAL DESCRIPTION ; The BF422 is a NPN silicon planar epitaxial transistor. It features high voltage and is intended for high voltage class A output stage of audio frequency	OCR Scan	BF422 BF423 10Kohm -30mA Vce-50V. 00x49477 OQJ300, 3094 transistor BF423 OQJ300	PDF
bf314 Abstract: No abstract text available Text: BF 314 NPN SILICON Ik lJ. PLANAR UBI HIGH FREQUENCY EPITAXIAL J TRANSISTOR m n mj»4 * ? j i MECHANICAL OUTLINE GENERAL DESCRIPTION ; The BF314 is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration.	OCR Scan	BF314 O-92F 100MHz BOX69477 J0321	PDF
2SC2086 Abstract: 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor Text: MITSUBISHI RF POWER TRANSISTOR 2SC2086 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2086 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES	OCR Scan	2SC2086 2SC2086 27MHz 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor	PDF
2SC2055 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC20S5 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. FEATURES • High power gain: Gpe > 1 3 d B	OCR Scan	2SC20S5 2SC2055 175MHz --j25iJ 5k7k10k 2SC2055	PDF
BF314 Abstract: TRANSISTOR bf314 Text: ' "JÊ S ILIC O N sS NPN HIGH PLANAR EPITAXIAL FREQUENCY TRANSISTOR % MECHANICAL OUTLINE GENERAL DESCRIPTION : The BF31^ is a NPN silicon planar epitaxial transistor designed for use as RF amplifier and VHF & UHF input stage in common base configuration. TO-92F	OCR Scan	BF314 O-92F 120ohm 190MHz 100MHz 200MHz 100MHz TRANSISTOR bf314	PDF

2SC2055 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC2055 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications. Dimensions i 0 5 .1 M A X	OCR Scan	2SC2055 2SC2055 175MHz --j25iJ 5k7k10k	PDF
transistor 3569 Abstract: 3569 PN3569 MICRO ELECTRONICS ltd transistor ebc Transistor Text: y tte NPN SILICON PLANAR EPITAXIAL TRANSISTOR IN /llC F t O E I _ E C ; - r R GENERAL DESCRIPTION : The PN 3569 is an NPN silicon planar epitaxial transistor designed for amplifier and swit ching applications for collector current up to 500mA. O I V I I C	OCR Scan	500mA, O-92A 100uA Ta-75Â 150mA Ib-15mA transistor 3569 3569 PN3569 MICRO ELECTRONICS ltd transistor ebc Transistor	PDF
RF POWER TRANSISTOR NPN Abstract: TRANSISTOR 2SC2538 equivalent 2SC2538 8D2T hu cj voe Text: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC2538 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on V H F band mobile radio applications. FEATURES • • • High power gain: Gp e ^ 10dB	OCR Scan	2SC2538 175MHz 25-j3 500mW 175MHz RF POWER TRANSISTOR NPN TRANSISTOR 2SC2538 equivalent 8D2T hu cj voe	PDF
2SC2086 Abstract: transistor 8d RF NPN POWER TRANSISTOR l band Text: MITSUBISHI RF POWER TRANSISTOR 2SC2086 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2086 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. D im ensions in mm 0 5 .1 M A X FEATURES	OCR Scan	2SC2086 2SC2086 transistor 8d RF NPN POWER TRANSISTOR l band	PDF
TRANSISTOR 2SC2538 equivalent Abstract: 2SC2538 Text: MITSUBISHI RF POWER TRANSISTOR 2SC2538 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2538 is a silicon NPN epitaxial planar type transistor designed fo r RF amplifiers on V H F band mobile radio applications. Dimensions in mm 0 5 .1 M A X FEATURES	OCR Scan	2SC2538 175MHz 500mW, 175MHz otherwi100 i-1----1100 TRANSISTOR 2SC2538 equivalent	PDF
TRANSISTOR SE 135 Abstract: 2SC2055 transistor BA RW Text: MITSUBISHI RF POWER TRANSISTOR 2SC2055 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC 2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on V H F band portable or hand-held radio applications. Dimensions in mm 0 5 .1 M A X	OCR Scan	2SC2055 2SC2055 O-92L TRANSISTOR SE 135 transistor BA RW	PDF
2SC2053 Abstract: transistor 2sc2053 mitsubishi 2sc2053 transistor 8d 2SC205 TRANSISTOR 1P mitsubishi vcb RF POWER TRANSISTOR NPN 1P transistor Text: MITSUBISHI RF POWER TRANSISTOR 2SC2053 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de signed for R F amplifiers on V H F band mobile radio applications. Dimensions in mm 0 5 .1 M A X	OCR Scan	2SC2053 175MHz 2SC2053 transistor 2sc2053 mitsubishi 2sc2053 transistor 8d 2SC205 TRANSISTOR 1P mitsubishi vcb RF POWER TRANSISTOR NPN 1P transistor	PDF
2SC2053 Abstract: RF POWER TRANSISTOR NPN COIL 1mH Text: MITSUBISHI RF POWER TRANSISTOR 2SC20S3 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION O U TLINE DRAWING 2SC2053 is a silicon NPN epitaxial planar type transistor de signed for RF amplifiers on V H F band mobile radio applications. Dimensions in mm 0 5 .1 M A X	OCR Scan	2SC2053 175MHz 8-j12 175MHz RF POWER TRANSISTOR NPN COIL 1mH	PDF
Untitled Abstract: No abstract text available Text: WA PN3568 NPN SILICON TRANSISTOR PN3568 is NPN silicon planar epitaxial transistor TO-92 designed for amplifier and switching applications for collector current up to 500mA. ABSOLUTE MAXIMUM RATINGS EBC Collector-Base Voltage vCB0 Collector-Emitter Voltage	OCR Scan	PN3568 PN3568 500mA. 500mA 600mW 100nA 150mA	PDF
transistor d 1825 7c Abstract: BU406 Text: SANYO SEMI CON DUCTOR CORP IB E D I BU406. 407 Tn?07b D00S4flti T ' 3 3 - / / NPN Epitaxial Planar Silicon Transistors 2010A C R T Horizontal Output Applications 1. Structure: Silicon NPN epitaxial planar transistor 2. Package: JEDEC: TO-220AB 3. Use: CRT display horizontal deflection output	OCR Scan	D00S4flti BU406. O-220AB BU406 BU407 1S-126A IS-20MA transistor d 1825 7c	PDF

NPN SILICON EPITAXIAL PLANAR TRANSISTOR TO92 Search Results

NPN SILICON EPITAXIAL PLANAR TRANSISTOR TO92 Result Highlights (5)

NPN SILICON EPITAXIAL PLANAR TRANSISTOR TO92 Datasheets Context Search

Untitled

motorola p1f

2N2222 MPS2222 npn transistor

Untitled

Untitled

2SC2482

NTE107

transistor 3569

Untitled

3094 transistor

bf314

2SC2086

2SC2055

BF314

2SC2055

transistor 3569

RF POWER TRANSISTOR NPN

2SC2086

TRANSISTOR 2SC2538 equivalent

TRANSISTOR SE 135

2SC2053

2SC2053

Untitled

transistor d 1825 7c