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    NPN DARLINGTON 150V 15A Search Results

    NPN DARLINGTON 150V 15A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    ULS2003H/R Rochester Electronics LLC ULS2003 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    ULS2022R/B Rochester Electronics LLC ULS2022 - High Voltage High Current Darlington Array Visit Rochester Electronics LLC Buy
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy

    NPN DARLINGTON 150V 15A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor 10A 100V

    Abstract: darlington power transistor npn DARLINGTON 10A MJ11017 MJ11018 NPN transistor Ic 50A td tr ts tf npn darlington 150v 15a
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 150V (Min.) ·High DC Current Gain: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A


    Original     		PDF MJ11017 Cycle10% NPN Transistor 10A 100V darlington power transistor npn DARLINGTON 10A MJ11017 MJ11018 NPN transistor Ic 50A td tr ts tf npn darlington 150v 15a

    Untitled

    Abstract: No abstract text available
    Text: ,O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJH11018 Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE = 400(Min)@lc=10A • Collector-Emitter Sustaining Voltage-


    Original     		PDF MJH11018 MJH11017

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


    Original     		PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    2SD2561

    Abstract: DSA0016513 2sb1648
    Text: Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA 24.4±0.2 100max µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A


    Original     		PDF 2SD2561 2SB1648) 100max 150min 5000min 70typ 120typ MT-200 2SD2561 DSA0016513 2sb1648

    2SD2560

    Abstract: 2SB1647 2sd25
    Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)


    Original     		PDF 2SD2560 2SB1647) 100max 150min 5000min 70typ 120typ MT-100 2SD2560 2SB1647 2sd25

    2SD2562

    Abstract: 2SD256 2sb1649
    Text: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C


    Original     		PDF 2SD2562 2SB1649) FM100 100max 150min 5000min 70typ 120typ 2SD2562 2SD256 2sb1649

    2SB1648

    Abstract: 2SD2561 2sd25
    Text: C Equivalent circuit 2SD2561 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1648 ICBO Unit VCB=150V 100max µA µA 150min V VCE=4V, IC=10A 5000min∗ IC=10A, IB=10mA 2.5max V IC=10A, IB=10mA 3.0max V fT VCE=12V, IE=–2A 70typ MHz COB


    Original     		PDF 2SD2561 2SB1648) 100max 150min 5000min 70typ 120typ MT-200 2SB1648 2SD2561 2sd25

    2SD2560

    Abstract: 2SB1647 DSA0016513
    Text: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) 150min 5000min∗ VCE(sat) IC=10A, IB=10mA 2.5max W VBE(sat) IC=10A, IB=10mA


    Original     		PDF 2SD2560 2SB1647) MT-100 100max 150min 5000min 70typ 120typ 2SD2560 2SB1647 DSA0016513

    2SD2562

    Abstract: 2sb1649
    Text: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C


    Original     		PDF 2SD2562 2SB1649) FM100 100max 150min 5000min 70typ 120typ 2SD2562 2sb1649

    circuit diagram of mosfet based smps power supply

    Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
    Text: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The


    Original     		PDF new/fdc6901l FDC6901L FDJ129P Power247TM, circuit diagram of mosfet based smps power supply FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel

    C3679 equivalent

    Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
    Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.


    Original     		PDF T01EE0 H1-T01EE0-0107020SB C3679 equivalent transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		PDF n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493

    c5287 equivalent transistor

    Abstract: transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		PDF 2SA1693 2SA1694 2SA1695 2SA1725 2SA1907 2SA1908 2SA1909 2SC3179 2SC3852 2SC4511 c5287 equivalent transistor transistor d2495 c4131 TRANSISTOR REPLACEMENT GUIDE B1560 equivalent Sanken Power Transistors C3679 equivalent shinetsu G746 C3834 transistor c4468 power transistor equivalent 2SC3854 equivalent

    TIPL785A

    Abstract: TIPL785 T1PL790 TIPL790 TIPL790A GD37117 i8311
    Text: TEXAS INSTR -£OPTO> t5 D e | âTblTSb DD37113 fi |~~ T - 3 3 -2 9 Ö961726 TEXAS I NS TR 62C COPTO 37113 TIPL785, TIPL785A, TIPL790, TIPL790A N-P-N MONOLITHIC DARLINGTON CONNECTED SILICON POWER TRANSISTORS O C TO B E R 1 9 8 2 - R E V IS E D O C TO B E R 1 9 8 4


    OCR Scan     		PDF GG37113 T-33-29 TIPL785, TIPL790 TIPL785A, TIPL790A TIPL790, TIPL790A TIPL785A TIPL785 T1PL790 TIPL790 GD37117 i8311

    diode e106

    Abstract: tipl 750 TIPL785A
    Text: TEXAS INSTR -£OPTO> bE Ï F | flìblTEh GD37113 fi |~~ T -3 3 -2 9 Ö961726 TEXAS IN ST R 62C_37113 COPTO TIPL785, TIPL785A, TIPL790;TIPL790A N-P-N MONOLITHIC DARLINGTON CONNECTED SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 • Rugged Epitaxial Planar Construction


    OCR Scan     		PDF GD37113 TIPL785, TIPL785A, TIPL790 TIPL790A TIPL790 IPL785A, TIPL790A T1PL790, diode e106 tipl 750 TIPL785A

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352

    PTC XK

    Abstract: PTC6063 ptc st 450 PTC6061 TO-204aa MICROSEMI PACKAGE OUTLINE PTC6062 ptc t 100
    Text: 61 159 50 M I C R Q S E MI C O R P / POWER 1 -V.JÏÏ2 0 2 E 00464 dF | bllSISO ODDDMt.4 □ D ‘33 2~ 7 - pjQ Q060 pTC 0061 PTC 6062 Power Technology Components PTC 6063 HIGH VOLTAGE DARLINGTON NPN TRANSISTORS 20 AMPERES 500 VOLTS FEATURES APPLICATIONS • High Voltage Rating - 5 0 0 Volts Sustaining


    OCR Scan     		PDF PTC6060 PTC6061 PTC6062-- PTC6063-- PTC XK PTC6063 ptc st 450 TO-204aa MICROSEMI PACKAGE OUTLINE PTC6062 ptc t 100

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		PDF 88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    40375

    Abstract: 2N6180 2N3055 2n377 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TY PES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W ic • 1 A HIM. P f ■ 5 W m ax. T O - 3 9 * le * - 1 A MX. P j « 7 W m ax. (T O - » ) • ic ■ 2 A m ax. P j “ 10 f t max. (TO -39) ft 30 x 30*


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 40375 2N6180 2N3055 2n377 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178