RN1107F
Abstract: RN1108F RN1109F RN2107F
Text: RN1107F~RN1109F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1107F,RN1108F,RN1109F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors.
|
Original
|
RN1107F
RN1109F
RN1108F
RN2107F
2109F
RN1107F
RN1108F
RN1109F
|
PDF
|
RN1114F
Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
Text: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design
|
Original
|
RN1114F
RN1118F
RN1115F
RN1116F
RN1117F
RN2114F
2118F
RN1114F
RN1118F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors. Simplify circuit design
|
Original
|
RN1114F
RN1118F
RN1115F
RN1116F
RN1117F
RN2114F
2118F
RN1114F
|
PDF
|
RN1114F
Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
Text: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design
|
Original
|
RN1114F
RN1118F
RN1115F
RN1116F
RN1117F
RN2114F
2118F
RN1114F
RN1118F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design
|
Original
|
RN1114F
RN1118F
RN1115F
RN1116F
RN1117F
RN2114F
2118F
|
PDF
|
RN1114F
Abstract: RN1115F RN1116F RN1117F RN1118F RN2114F
Text: RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors. z Simplify circuit design
|
Original
|
RN1114F
RN1118F
RN1115F
RN1116F
RN1117F
RN2114F
2118F
RN1114F
RN1118F
|
PDF
|
marking x2
Abstract: RN1130F RN2130F MARKINGX2
Text: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
RN1130F
RN2130F
marking x2
RN1130F
RN2130F
MARKINGX2
|
PDF
|
RN2101F
Abstract: 1104F 1106F RN1101F RN1102F RN1103F RN1104F RN1105F RN1106F RN2106F
Text: RN1101F~RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design
|
Original
|
RN1101FRN1106F
RN1101F
RN1102F
RN1103F
RN1104F
RN1105F
RN1106F
RN2101F
RN2106F
RN1101F
1104F
1106F
RN1103F
RN1106F
RN2106F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
RN1131F
RN1132F
RN2131F,
RN2132F
|
PDF
|
RN1131F
Abstract: RN1132F RN2131F RN2132F
Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
RN1131F
RN1132F
RN2131F,
RN2132F
RN1132F
RN2131F
RN2132F
|
PDF
|
406E
Abstract: KRC401E KRC402E KRC403E KRC404E KRC405E KRC406E NPN bias ESM
Text: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process.
|
Original
|
KRC401E
KRC406E
KRC405E
KRC403E
KRC404E
KRC402E
KRC401E
RC406E
406E
KRC402E
KRC403E
KRC404E
KRC405E
KRC406E
NPN bias ESM
|
PDF
|
ESM 310
Abstract: KRC407E KRC408E KRC409E NPN bias ESM
Text: SEMICONDUCTOR KRC407E~KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors ᴌSimplify Circuit Design D H G A 2 ᴌReduce a Quantity of Parts and Manufacturing Process
|
Original
|
KRC407E
KRC409E
KRC408E
KRC407E
ESM 310
KRC408E
KRC409E
NPN bias ESM
|
PDF
|
RN1130F
Abstract: RN2130F
Text: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
RN1130F
RN2130F
RN1130F
RN2130F
|
PDF
|
ESM 310
Abstract: KRC407E KRC408E KRC409E NPN bias ESM
Text: SEMICONDUCTOR KRC407E~KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design D H G A 2 Reduce a Quantity of Parts and Manufacturing Process
|
Original
|
KRC407E
KRC409E
KRC408E
KRC407E
ESM 310
KRC408E
KRC409E
NPN bias ESM
|
PDF
|
|
|
RN1130F
Abstract: RN2130F
Text: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
RN1130F
RN2130F
RN1130F
RN2130F
|
PDF
|
kra421
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC416E~KRC422E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D H G A 2 ・Reduce a Quantity of Parts and Manufacturing Process.
|
Original
|
KRC416E
KRC422E
KRC416E
KRC417E
KRC418E
KRC419E
KRC420E
KRC421E
kra421
|
PDF
|
RN2130F
Abstract: No abstract text available
Text: RN1130F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z z z z Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
RN1130F
RN2130F
|
PDF
|
RN1112F
Abstract: RN1113F RN2112F RN2113F
Text: RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
|
Original
|
RN1112F
RN1113F
RN2112F
RN2113F
RN1113F
RN2113F
|
PDF
|
KRC411E
Abstract: KRC410E KRC412E KRC413E KRC414E NPN bias ESM
Text: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D G A 2 C H Reduce a Quantity of Parts and Manufacturing Process.
|
Original
|
KRC410E
KRC414E
KRC413E
KRC411E
KRC412E
KRC413E
KRC414E
NPN bias ESM
|
PDF
|
KRC407E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC407E~KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors ・Simplify Circuit Design D G A 2 C H ・Reduce a Quantity of Parts and Manufacturing Process
|
Original
|
KRC407E
KRC409E
KRC408E
KRC409E
KRC408E
|
PDF
|
KRC403e
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC401E~KRC406E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D G A 2 C H ・Reduce a Quantity of Parts and Manufacturing Process.
|
Original
|
KRC401E
KRC406E
KRC402E
KRC403E
KRC404E
KRC405E
KRC405E
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RN1131F,RN1132F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131F,RN1132F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
|
Original
|
RN1131F
RN1132F
RN2131F,
RN2132F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D G A 2 C 3 1 H ・Reduce a Quantity of Parts and Manufacturing Process.
|
Original
|
KRC410E
KRC414E
KRC413E
KRC413E
KRC414E
|
PDF
|
KRC416E
Abstract: KRC422E 422E KRC417E KRC418E KRC419E KRC420E KRC421E r2kq
Text: KRC416EKRC422E SEMICONDUCTOR EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
|
OCR Scan
|
KRC416E-KRC422E
KRC416E
KRC417E
KRC418E
KRC419E
KRC420E
KRC421E
KRC422E
KRC418E
422E
r2kq
|
PDF
|
