RN1112FT
Abstract: RN1113FT RN2112FT RN2113FT
Text: RN2112FT,RN2113FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112FT, RN2113FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
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Original
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RN2112FT
RN2113FT
RN2112FT,
RN1112FT,
RN1113FT
RN2112FT
RN1112FT
RN1113FT
RN2113FT
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PDF
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RN1113F
Abstract: RN2112F RN2113F RN1112F
Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
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Original
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RN2112F
RN2113F
RN1112F,
RN1113F
RN1113F
RN2113F
RN1112F
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PDF
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RN1112F
Abstract: RN1113F RN2112F RN2113F
Text: RN2112F,RN2113F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112F,RN2113F ○ スイッチング用 ○ インバータ回路 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm
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Original
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RN2112F
RN2113F
RN1112FRN1113F
RN2112F
RN1112F
RN1113F
RN2113F
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PDF
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RN1112FS
Abstract: RN1113FS RN2112FS RN2113FS
Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more
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Original
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RN2112FS
RN2113FS
RN2112FS,
RN1112FS,
RN1113FS
RN1112FS
RN1113FS
RN2113FS
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PDF
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RN1112FS
Abstract: RN1113FS RN2112FS RN2113FS
Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.2±0.05 0.15±0.05 Equivalent Circuit and Bias Resistor Values
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Original
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RN2112FS
RN2113FS
RN2112FS,
RN1112FS,
RN1113FS
RN1112FS
RN1113FS
RN2113FS
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PDF
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RN1112FT
Abstract: RN1113FT RN2112FT RN2113FT
Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN2112FT
RN2113FT
RN1112FT,
RN1113FT
RN1112FT
RN1113FT
RN2113FT
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PDF
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toshiba inverter
Abstract: RN1112FV RN1113FV RN2112FV RN2113FV
Text: RN2112FV,RN2113FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112FV, RN2113FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm 0.22±0.05 Simplified circuit design Reduced quantity of parts and manufacturing process
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Original
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RN2112FV
RN2113FV
RN2112FV,
RN1112FV,
RN1113FV
toshiba inverter
RN1112FV
RN1113FV
RN2113FV
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PDF
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RN1112F
Abstract: RN1113F RN2112F RN2113F
Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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RN2112F
RN2113F
RN1112F,
RN1113F
RN2112F
RN1112F
RN1113F
RN2113F
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
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Original
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RN2112F
RN2113F
RN1112F,
RN1113F
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PDF
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RN2112FT
Abstract: RN1112FT RN1113FT RN2113FT
Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN2112FT
RN2113FT
RN1112FT,
RN1113FT
RN1112FT
RN1113FT
RN2113FT
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FS,RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enable the manufacture of ever more
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Original
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RN2112FS
RN2113FS
RN1112FS,
RN1113FS
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process
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Original
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RN2112F
RN2113F
RN1112F,
RN1113F
RN2112F
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PDF
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RN1112FT
Abstract: RN1113FT RN2112FT RN2113FT
Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT, RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • High-density mount is possible because of devices housed in very thin
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Original
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RN2112FT
RN2113FT
RN2112FT,
RN1112FT,
RN1113FT
RN2112FT
RN1112FT
RN1112FT
RN1113FT
RN2113FT
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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RN2112F
RN2113F
RN1112F,
RN1113F
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN2112FT
RN2113FT
RN1112FT,
RN1113FT
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN2112FT
RN2113FT
RN1112FT,
RN1113FT
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2112FV,RN2113FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112FV,RN2113FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm 0.22±0.05 Simplify circuit design Reduce a quantity of parts and manufacturing process
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Original
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RN2112FV
RN2113FV
RN1112FV,
RN1113FV
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PDF
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RN1112FS
Abstract: RN1113FS RN2112FS RN2113FS
Text: RN2112FS,RN2113FS 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112FS,RN2113FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
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Original
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RN2112FS
RN2113FS
RN1112FSRN1113FS
RN2112FS
RN1112FS
RN1113FS
RN2113FS
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN2112FT
RN2113FT
RN1112FT,
RN1113FT
RN2112FT
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin
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Original
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RN2112FT
RN2113FT
RN1112FT,
RN1113FT
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PDF
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Untitled
Abstract: No abstract text available
Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.6±0.05 • Complementary to RN2112FS, RN2113FS
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Original
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RN1112FS
RN1113FS
RN1112FS,
RN2112FS,
RN2113FS
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2112F,RN2113F T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112F, RN2113F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN2112F
RN2113F
RN2112F,
RN1112F,
RN1113F
RN2112F
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PDF
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Untitled
Abstract: No abstract text available
Text: RN2112F,RN2113F T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS R N'm 7 1 1 7 F g R N'm 7 1 1 3 F • m■ ■ ■ m■ ■ ■ w ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors
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OCR Scan
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RN2112F
RN2113F
RN1112F,
RN1113F
RN2112F
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN2112F,RN2113F TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112F, RN2113F Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN2112F
RN2113F
RN2112F,
RN1112F,
RN1113F
RN2112F
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PDF
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