RN1130F
Abstract: RN2130F
Text: RN2130F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2130F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm z 超小型パッケージ (ESM) のため超高密度実装に適しています。
|
Original
|
PDF
|
RN2130F
RN1130F
RN1130F
RN2130F
|
RN1130FT
Abstract: RN2130FT 72U-A
Text: RN2130FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor, the miniaturization of the
|
Original
|
PDF
|
RN2130FT
RN1130FT
RN1130FT
RN2130FT
72U-A
|
RN1130F
Abstract: RN2130F
Text: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
RN2130F
RN1130F
to150
RN1130F
RN2130F
|
Untitled
Abstract: No abstract text available
Text: RN2130FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Extra small package(TESM) is applicable for extra high density fabrication. z Since bias resistance is built in the transistor, the miniaturization of the
|
Original
|
PDF
|
RN2130FT
RN1130FT
-10esented
|
Untitled
Abstract: No abstract text available
Text: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
RN2130F
RN1130F
|
Untitled
Abstract: No abstract text available
Text: RN2130FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor, the miniaturization of the
|
Original
|
PDF
|
RN2130FT
RN1130FT
|
RN1130F
Abstract: RN2130F
Text: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
RN2130F
RN1130F
RN1130F
RN2130F
|
Untitled
Abstract: No abstract text available
Text: RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit : mm Simplify circuit design 2 3 0.13±0.05 0.4 1 0.5±0.05 Equivalent Circuit 0.8±0.05
|
Original
|
PDF
|
RN2130FV
RN1130FV
|
RN2130FV
Abstract: sat 1205 RN1130FV
Text: RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 Unit : mm Simplified circuit design 2 3 0.13±0.05 0.4 1 0.5±0.05 Equivalent Circuit 0.8±0.05
|
Original
|
PDF
|
RN2130FV
RN1130FV
RN2130FV
sat 1205
RN1130FV
|
RN1130F
Abstract: RN2130F
Text: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
RN2130F
RN1130F
RN1130F
RN2130F
|
Untitled
Abstract: No abstract text available
Text: RN2130F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2130F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z z z z Unit : mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
|
Original
|
PDF
|
RN2130F
RN1130F
|
RN1130F
Abstract: RN2130F RN47A6
Text: RN47A6 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin)
|
Original
|
PDF
|
RN47A6
0062g
RN1130F
RN2130F
RN1130F
RN2130F
RN47A6
|
lm2804
Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.
|
Original
|
PDF
|
BCE0030C
S-167
BCE0030D
lm2804
marking 513 SOD-323
land dpu 230
toshiba diode 1SS416 footprint
5252 F solar
sot23 2fv
TAH8N401K
IC sj 4558
zener diode reference guide
rn4983
|
Untitled
Abstract: No abstract text available
Text: RN1130FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor,the miniaturization of the
|
Original
|
PDF
|
RN1130FT
RN2130FT
|
|
|
ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
|
Original
|
PDF
|
SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
|
IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
|
Original
|
PDF
|
SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
|
toshiba YK smd marking
Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製
|
Original
|
PDF
|
050106DAA1
12341D5AD
BDJ0097A
toshiba YK smd marking
bdj0097a
2904 SMD IC
2SC3327
VA MARKING
rn4983
smd marking Yd
XA marking
k 2968 toshiba
RN1106FV
|
RN1130F
Abstract: RN2130F
Text: RN1130F 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1130F ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm z 超小型パッケージ (ESM) のため超高密度実装に適しています。
|
Original
|
PDF
|
RN1130F
RN2130F
RN1130F
RN2130F
|
RN1130F
Abstract: RN2130F RN47A6
Text: RN47A6 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN47A6 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm •
|
Original
|
PDF
|
RN47A6
RN1130F
RN2130F
RN1130F
RN2130F
RN47A6
|
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
|
Original
|
PDF
|
2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
|
RN1130FT
Abstract: RN2130FT marking X2
Text: RN1130FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130FT Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Extra small package(TESM) is applicable for extra high density fabrication. Since bias resistance is built in the transistor,the miniaturization of the
|
Original
|
PDF
|
RN1130FT
RN2130FT
0022g
RN1130FT
RN2130FT
marking X2
|
Untitled
Abstract: No abstract text available
Text: RN1130FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1130FV Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications 0.22±0.05 Unit: mm Simplify circuit design 1.2±0.05 0.32±0.05 With built-in bias resistors 0.8±0.05
|
Original
|
PDF
|
RN1130FV
RN2130FV
|
transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
|
Original
|
PDF
|
SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
|
Untitled
Abstract: No abstract text available
Text: RN47A6 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A6 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin)
|
Original
|
PDF
|
RN47A6
0062g
RN1130F
RN2130F
|
