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    NPN 33725 Search Results

    NPN 33725 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy

    NPN 33725 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C 337-25

    Abstract: C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338
    Text: BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


    Original     		PDF UL94V-0 BC337-40 BC338-40 C 337-25 C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338

    c2328a

    Abstract: B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors
    Text: NPN Medium Power Transistors NPN Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO I CBO VCB I V hFE @ C & CE Min Max (mA) (V) (nA) @ (V) Max IC C ob (mA) @ (V) & (pF) I (V) Max (I = C ) Max Min Max B 10 V CE(SAT)


    Original     		PDF O-92L OT-89 KSB1121 MPS8550 MPS6562 c2328a B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors

    C 337-25

    Abstract: C 33725 BC337-25 NPN general purpose transistor BC337 BC337-16 BC337 NPN transistor datasheet BC337 bc33716 BC-337-16 BC33725
    Text: BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original     		PDF BC337-16 BC337-25 TN3019A BC337-16 C 337-25 C 33725 BC337-25 NPN general purpose transistor BC337 BC337 NPN transistor datasheet BC337 bc33716 BC-337-16 BC33725

    OF TRANSISTOR BC337

    Abstract: TRANSISTOR BC337-25 transistor 33725 TN3019A bc337 m transistor BC337-16 BC337-16 BC337-25 CBVK741B019 F63TNR
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original     		PDF BC337-16 BC337-25 BC337-16 TN3019A OF TRANSISTOR BC337 TRANSISTOR BC337-25 transistor 33725 bc337 m transistor BC337-16 BC337-25 CBVK741B019 F63TNR

    Untitled

    Abstract: No abstract text available
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original     		PDF BC337-16 BC337-25 BC337-16 TN3019A

    bc337 cross-reference

    Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original     		PDF BC337-16 BC337-25 TN3019A BC337 BC33716TA BC33716BU bc337 cross-reference bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross

    c 337 25

    Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
    Text: NPN Silicon AF Transistors BC 337 BC 338 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 PNP ● 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338


    Original     		PDF Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 c 337 25 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337

    C 337-40

    Abstract: c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337
    Text: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328


    Original     		PDF Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 Collector-ba20 C 337-40 c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan     		PDF BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A

    transistor BC 310

    Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor

    10D3

    Abstract: 1G14 C 337-40
    Text: NPN TRANSISTORS ITT SEMICOND/ INTERMET ALL 3ME D • 4böH711 0002443 5 ■ ISI T - 3 i - o \ NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 ='TO-92 . On special request, these transistors will also be produced with TO -18 pin configuration.


    OCR Scan     		PDF BC170A BC170B BC170C BC337 BC338 BC413B2) BC413C2) BC414B2) BC414C2 BC445 10D3 1G14 C 337-40

    C 337-25

    Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).


    OCR Scan     		PDF BC337 BC327. 115002/00/03/pp8 C 337-25 C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63

    c33725

    Abstract: c33740 Bc337
    Text: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1


    OCR Scan     		PDF Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 BC337 A235b05 c33725 c33740 Bc337

    JC337

    Abstract: transistor 33725 C 33725 ph 63
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor JC337 FEATURES PINNING • Low curren t max. 500 mA PIN • Low voltage (max. 45 V).


    OCR Scan     		PDF JC337 JC327. 115002/00/03/pp8 JC337 transistor 33725 C 33725 ph 63

    BC183A

    Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
    Text: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B


    OCR Scan     		PDF CB-76 BC317P. BC183A BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B

    C 337-25

    Abstract: BC337-25 bc33725 BC337-16 BC-337-16 bc33716 BC337
    Text: S E M IC O N D U C T O R tm BC337-16 BC337-25 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 m A. Sourced from Process 12. See TN 3019A for characteristics. Absolute Maximum RâtinÇjS


    OCR Scan     		PDF BC337-16 BC337-25 C 337-25 BC337-25 bc33725 BC-337-16 bc33716 BC337

    C 337-25

    Abstract: BC337 figure BC337 MOTOROLA bc338-40 BC337-40 SBC337
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN Silicon BC337,-1 6 ,-2 5 ,-4 0 B C 338,-16 ,-2 5 ,-4 0 COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC337 BC338 25 Vdc 30 Vdc Unit VCEO 45 C ollector-B ase Voltage


    OCR Scan     		PDF BC337 BC337 BC338 BC338 C 337-25 BC337 figure MOTOROLA bc338-40 BC337-40 SBC337

    BC413B

    Abstract: BC413C BC414B BC414C BC337-25 BC337-40 BC337A BC338 BC338-16 BC338-25
    Text: TO-92 Plastic Package Transistors NPN _ _ Maxim um Ratings Type No. BC 337-25 ^CEO ^EBO PD (V) Min (V) Min (V) Min (W) 45 5 (A) ^CB 'c e s ^CE (V) (HA) Max @ (V) Max @Tc=25°c 0 .625 'cBO <mA) 0.5 0.1 20 »FE Min BC337A 50 60 45 60 5 5 0.625 0.625 0.5


    OCR Scan     		PDF BC337-25 O-92-4 BC337-40 BC337A BC338 BC414C BC413B BC413C BC414B BC338-16 BC338-25

    transistors BC 487

    Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725
    Text: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B


    OCR Scan     		PDF CB-76 BC317P. transistors BC 487 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725

    BC 546 BP

    Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
    Text: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B


    OCR Scan     		PDF CB-76 BC317P. BC 546 BP bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740

    2N6078

    Abstract: No abstract text available
    Text: MOTOROLA SC -CDIODES/OPTO} 34 ]>E.| b3b7255 0037^44 T f §337255 M O T O R O L A SC D I O D E S /O P T O 34C 3 7 9 4 4 D T '3 3 '0 1 SILICON POWER TRANSISTOR DICE (continued) 2C6235 DIE NO. — NPN LINE SOURCE — PL500.746 This die provides performance equal to or better than that of


    OCR Scan     		PDF b3b7255 PL500 2N6077 2N6078 2N6233 2N6234 2N6235 2C6235

    BSY84

    Abstract: C 337-40 33740 npn 1W 40V to39 CA500 c 33740 BSY86 BC337 BC341 850mW
    Text: General Purpo/e Tran/i/ter/ r T Y P E NO. PD NPN >C BVc b O l v Ceo b v E bo @ T A = 2 5 °C v C E s a t @ I c / l B h p E @ V C E @ *C Cob m ax. m ax. m in ./max. f T @ •c C A SE m in. <§> <§> 1 20 V 120V 120V 120V 90V 80V 80V 80V 80V 60V 6V 6V 6V


    OCR Scan     		PDF 850mW 150mA 120MHz BSY84 C 337-40 33740 npn 1W 40V to39 CA500 c 33740 BSY86 BC337 BC341

    C 337-25

    Abstract: C 33725 BC337-16 BC-337-16 BC337-25 bc33716 NPN 33725 BC337 33725
    Text: S E M IC O N D U C T O R tm BC337-16 BC337-25 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r use as g e n e ra l pu rp o se a m p lifie rs a n d sw itches requiring collecto r c u rrents to 500 m A. S o u rce d from P roce ss 12. S e e T N 3 0 1 9 A fo r ch a ra c te ris tic s.


    OCR Scan     		PDF BC337-16 BC337-25 SeeTN3019A C 337-25 C 33725 BC-337-16 BC337-25 bc33716 NPN 33725 BC337 33725

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Text: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


    OCR Scan     		PDF 0HF40 0HF60 0HF80 6FP10 6F100 70HF10 UAA2001 MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402