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    NPN 2A DPAK Search Results

    NPN 2A DPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    NPN 2A DPAK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC2020D TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES ・Low Collector Saturation Voltage : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. ・Straight Lead (IPAK, "L" Suffix)


    Original     		KTC2020D KTA1040D/L. PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC2020L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES ・Low Collector Saturation Voltage : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. ・Straight Lead (IPAK, "L" Suffix)


    Original     		KTC2020L KTA1040D/L. PDF

    KTC2020D

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC2020D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES ・Low Collector Saturation Voltage : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. ・Straight Lead (IPAK, "L" Suffix)


    Original     		KTA1040D/L. AEC-Q101. KTC2020D/L KTC2020D PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTC2020D/L EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VcE sat =1.0V(Max.) at Ic=2A, Ib=0.2A. • Straight Lead (IPAK, "L" Suffix)


    OCR Scan     		KTC2020D/L KTA1040D/L. PDF

    transistor MW 882

    Abstract: 882 transistor P882
    Text: CHENMKO ENTERPRISE CO.,LTD CH882PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. DPAK DPAK .050 (1.27) .030 (0.77) * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)


    Original     		CH882PT transistor MW 882 882 transistor P882 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC2020D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. A FEATURES I C J D Low Collector Saturation Voltage B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. O K E Q Complementary to KTA1040D/L.


    Original     		KTC2020D/L KTA1040D/L. PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC2020D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J D FEATURES Low Collector Saturation Voltage B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. M O K Complementary to KTA1040D/L.


    Original     		KTC2020D/L KTA1040D/L. PDF

    TSD1760

    Abstract: transistor a09 4 npn transistor ic AS 205 transistor TO252 transistor 18BSC TSB1184CP TSD1760CP
    Text: TSD1760 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 50V IC 3A VCE(SAT) Features ● ● Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP


    Original     		TSD1760 O-252 200mA TSB1184CP TSD1760CP TSD1760 transistor a09 4 npn transistor ic AS 205 transistor TO252 transistor 18BSC TSB1184CP PDF

    CH882GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH882GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. DPAK DPAK/TO-252 .050 (1.27) .030 (0.77) * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)


    Original     		CH882GP DPAK/TO-252 CH882GP PDF

    C5 MARKING TRANSISTOR

    Abstract: TSC136L NPN Silicon Power Transistor DPAK NPN Transistor 1.5A 400V 18BSC sot251 b09 transistor
    Text: TSC136L High Voltage NPN Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 2A VCE(SAT) Features 0.6V @ IC / IB = 1.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching


    Original     		TSC136L O-251 O-252 TSC136LCP TSC136LCH 70pcs C5 MARKING TRANSISTOR TSC136L NPN Silicon Power Transistor DPAK NPN Transistor 1.5A 400V 18BSC sot251 b09 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: TSD1760 Low Vcesat NPN Transistor TO-252 DPAK Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 50V BVCEO 50V IC 3A VCE(SAT) Features   Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB1184CP


    Original     		TSD1760 O-252 200mA TSB1184CP TSD1760CP PDF

    A13 MARKING CODE

    Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
    Text: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability


    Original     		TSC5802D O-251 O-252 TSC5802DCH TSC5802DCP O-251 75pcs A13 MARKING CODE transistor a13 MARKING a13 A13 transistor a13 marking transistor diode MARKING CODE a13 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH TSC53rty PDF

    diode D07-15

    Abstract: diode d07 SOT-251 d07 15 58 TSC5302D diode D07-15 30 D07 15 diode marking b2 NPN Silicon Power Transistor DPAK NPN Transistor 1A 400V
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH diode D07-15 diode d07 SOT-251 d07 15 58 TSC5302D diode D07-15 30 D07 15 diode marking b2 NPN Silicon Power Transistor DPAK NPN Transistor 1A 400V PDF

    TSC5302DCH

    Abstract: TSC5302DCP DIODE G14
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH DIODE G14 PDF

    DIODE F10

    Abstract: transistor C 2290 TSC5302D TSC5302DCH TSC5302DCP
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 DIODE F10 transistor C 2290 TSC5302D TSC5302DCH TSC5302DCP PDF

    Untitled

    Abstract: No abstract text available
    Text: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC / IB = 1A / 0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation


    Original     		TSC5302D O-251 O-252 TSC5302DCP TSC5302DCH PDF

    TSC5303DCH

    Abstract: TSC5303DCP transistor C14
    Text: TSC5303D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original     		TSC5303D O-251 O-252 TSC5303DCH TSC5303DCP transistor C14 PDF

    j3305

    Abstract: FJD3305H1TM j3305h1 FJD3305H1
    Text: FJD3305H1 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol TC=25°C unless otherwise noted


    Original     		FJD3305H1 FJD3305H1 j3305 FJD3305H1TM j3305h1 PDF

    TSC5303D

    Abstract: diode b10 250V transistor npn 2a
    Text: TSC5303D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original     		TSC5303D O-251 O-252 TSC53erty TSC5303D diode b10 250V transistor npn 2a PDF

    TSC5304EDCP

    Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
    Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original     		TSC5304ED O-251 O-252 TSC5304EDCP TSC5304EDCH O-252 75pcs marking E11 DIODE power transistor Ic 4A NPN to - 251 PDF

    PNP 2A DPAK

    Abstract: On semiconductor date Code dpak
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CJD110 NPN CJD115 PNP COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching such as Output or Driver stages in Applications such as Switching


    Original     		CJD110 CJD115 O-252) C-120 Rev020707E PNP 2A DPAK On semiconductor date Code dpak PDF

    PNP 2A DPAK

    Abstract: MJD112 MJD117 MJD117 Darlington On semiconductor date Code dpak npn 2A DPAK NPN VCBO 80V
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK TO-252 Plastic Package Designed for General Purpose Power and Switching Applications


    Original     		MJD112 MJD117 O-252) C-120 Rev220904E PNP 2A DPAK MJD117 Darlington On semiconductor date Code dpak npn 2A DPAK NPN VCBO 80V PDF

    TSC5304D

    Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
    Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation


    Original     		TSC5304D O-251 O-252 TSC5304D TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251 PDF