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    NP88N055DHE Search Results

    NP88N055DHE Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    NP88N055DHE-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation

    NP88N055DHE Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NP88N055DHE NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    NP88N055DHE NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF

    NP88N055DHE Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES


    Original     		PDF NP88N055CHE, NP88N055DHE, NP88N055EHE NP88N055CHE NP88N055DHE O-220AB O-262 O-263 O-220AB)

    D1414

    Abstract: NP88N055DHE NP88N055EHE MP-25 NP88N055CHE pt 11400
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original     		PDF NP88N055CHE, NP88N055DHE, NP88N055EHE NP88N055CHE O-262 O-220AB NP88N055DHE O-263 O-220AB) D1414 NP88N055DHE NP88N055EHE MP-25 NP88N055CHE pt 11400

    d1414

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original     		PDF NP88N055CHE, NP88N055DHE, NP88N055EHE NP88N055CHE NP88N055DHE NP88N055EHE O-220AB O-262 O-263 O-220AB) d1414

    D1414

    Abstract: NEC 88n055 NP88N055KHE-E-1-AY NP88N055MHE 88N055 88n05 NP88N055NHE NP88N055DHE NP88N055EHE NP88N055EHE-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.


    Original     		PDF NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE NP88N055EHE-E1-AY NP88N055EHE-E2-AY NP88N055KHE-E2-AY NP88N055KHE-E1-AY D1414 NEC 88n055 NP88N055KHE-E-1-AY NP88N055MHE 88N055 88n05 NP88N055NHE NP88N055DHE NP88N055EHE NP88N055EHE-E2-AY

    D1414

    Abstract: MP-25 NP88N055CHE NP88N055DHE NP88N055EHE NP88N055KHE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE,NP88N055DHE,NP88N055EHE,NP88N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original     		PDF NP88N055CHE NP88N055DHE NP88N055EHE NP88N055KHE NP88N055CHE O-263 MP-25ZJ) O-262 NP88N055EHE D1414 MP-25 NP88N055KHE

    D1414

    Abstract: MP-25 NP88N055CHE NP88N055DHE NP88N055EHE
    Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching


    Original     		PDF NP88N055CHE, NP88N055DHE, NP88N055EHE O-262 O-220AB NP88N055DHE NP88N055CHE O-263 D1414 MP-25 NP88N055CHE NP88N055DHE NP88N055EHE

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    NEC 88n055

    Abstract: D1414 NP88N055CHE NP88N055DHE NP88N055EHE NP88N055EHE-E1-AY NP88N055EHE-E2-AY NP88N055KHE NP88N055KHE-E1-AY NP88N055KHE-E2-AY
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    TO-252 MOSFET p channel

    Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
    Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering


    Original     		PDF NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS109V30 TO-252 MOSFET p channel NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    2SC5664

    Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
    Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation


    Original     		PDF D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326

    TO-252 MOSFET p channel

    Abstract: nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE
    Text: Power house NP-Series Q3/2001 ● TJ, MAX = 175° C ● Ultra low On-Resistance RDS ON ● Low Gate-Charge ● Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive


    Original     		PDF Q3/2001 NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS071V50 TO-252 MOSFET p channel nec 288 powermosfet Gate Drive STR 1504 TO-262 MOSFET NP80N03CLE NP80N03DLE NP80N04CHE NP80N04DHE NP84N04CHE