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    NP88N055CHE Search Results

    NP88N055CHE Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    NP88N055CHE-AZ Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation

    NP88N055CHE Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NP88N055CHE NEC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Original PDF
    NP88N055CHE NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF

    NP88N055CHE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES


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    PDF NP88N055CHE, NP88N055DHE, NP88N055EHE NP88N055CHE NP88N055DHE O-220AB O-262 O-263 O-220AB)

    D1414

    Abstract: NP88N055DHE NP88N055EHE MP-25 NP88N055CHE pt 11400
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


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    PDF NP88N055CHE, NP88N055DHE, NP88N055EHE NP88N055CHE O-262 O-220AB NP88N055DHE O-263 O-220AB) D1414 NP88N055DHE NP88N055EHE MP-25 NP88N055CHE pt 11400

    d1414

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


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    PDF NP88N055CHE, NP88N055DHE, NP88N055EHE NP88N055CHE NP88N055DHE NP88N055EHE O-220AB O-262 O-263 O-220AB) d1414

    D1414

    Abstract: NEC 88n055 NP88N055KHE-E-1-AY NP88N055MHE 88N055 88n05 NP88N055NHE NP88N055DHE NP88N055EHE NP88N055EHE-E2-AY
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.


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    PDF NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE NP88N055EHE-E1-AY NP88N055EHE-E2-AY NP88N055KHE-E2-AY NP88N055KHE-E1-AY D1414 NEC 88n055 NP88N055KHE-E-1-AY NP88N055MHE 88N055 88n05 NP88N055NHE NP88N055DHE NP88N055EHE NP88N055EHE-E2-AY

    D1414

    Abstract: MP-25 NP88N055CHE NP88N055DHE NP88N055EHE NP88N055KHE
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE,NP88N055DHE,NP88N055EHE,NP88N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.


    Original
    PDF NP88N055CHE NP88N055DHE NP88N055EHE NP88N055KHE NP88N055CHE O-263 MP-25ZJ) O-262 NP88N055EHE D1414 MP-25 NP88N055KHE

    D1414

    Abstract: MP-25 NP88N055CHE NP88N055DHE NP88N055EHE
    Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching


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    PDF NP88N055CHE, NP88N055DHE, NP88N055EHE O-262 O-220AB NP88N055DHE NP88N055CHE O-263 D1414 MP-25 NP88N055CHE NP88N055DHE NP88N055EHE

    PA1900TE

    Abstract: 2sk3326 PA1770 d1340 2SK3298 UMOS-2
    Text: PowerMOSFET by NEC: Well-built . Even the most brillant It’s the same in real life. intelligence needs a little muscle to put the ideas into practice. Conversely, sheer brute force won’t get you anywhere without some Let’s face it, brain or brainpower behind it.


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    PDF E-28007 I-20124 I-00139 GB-MK14 D13405EE3V0PF00 PA1900TE 2sk3326 PA1770 d1340 2SK3298 UMOS-2

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    NEC 88n055

    Abstract: D1414 NP88N055CHE NP88N055DHE NP88N055EHE NP88N055EHE-E1-AY NP88N055EHE-E2-AY NP88N055KHE NP88N055KHE-E1-AY NP88N055KHE-E2-AY
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


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    PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    TO-252 MOSFET p channel

    Abstract: NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE
    Text: Power house NP-Series 4/99 l TJ, MAX = 175° C l Ultra low On-Resistance RDS ON l Low Gate-Charge l Avalanche Energy rated MOSFET by NEC: W e l l - b u i l t Our hotheads can take the heat. Up to 175° C. Target Market and Applications l Automotive - Electric Power Steering


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    PDF NL-5612 S-18322 F-78142 E-28007 NP-S-NEWS109V30 TO-252 MOSFET p channel NP80N03CLE NP80N03DLE NP80N03ELE NP80N04CHE NP80N04DHE NP80N04EHE NP84N04CHE NP84N04DHE NP84N04EHE

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1/89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


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    PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    2SC5664

    Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
    Text: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation


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    PDF D18597EJ1V0SG 2SC5664 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326