upd2149
Abstract: No abstract text available
Text: NEC ¿ PD2149 1,024 X 4-Bit STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The //PD2149 is a 4096-bit static Random Access Memory organized as 1024 words by 4 bits. Using a scaled NMOS technology, it incorporates an innovative
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uPD2149
4096-bit
PD2149
18-pin
/PD2149
3-001637A
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Untitled
Abstract: No abstract text available
Text: Technical information Current output type CMOS linear image sensors with variable integration time function S10121 to S10124 series 1 [Figure 1] Block diagram Features a NMOS linear image sensor (S3901 to S3904 series) Start pulse In previous current output type NMOS linear image
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S10121
S10124
S3901
S3904
B1201,
KMPD9008E01
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D2167
Abstract: D2167-3 PD2167 UPD2167
Text: . W I s C NEC Electronics p.PD2167 16,384x i - b i t STATIC NMOS RAM Truth Table Description The /U.PD2167 is a 16,384-word by 1-bit static MOS RAM. Using a scaled-NMOS technology, its design provides the easy-to-use features associated with nonclocked static
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uPD2167
PD2167
384-word
jitPD2167
/xPD2167
PD2167
PD2167D
2167DS-REV2-7-83-CAT-L
D2167
D2167-3
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pD2167
Abstract: UPD2167
Text: NEC NEC Electronics is . ^ xT bI t STATIC NMOS RAM D escription The /¿PD2167 is a 16,384-word by 1-bit static M OS RAM. Using a scaled-NMOS technology, its design provides the easy-to-use features associated with nonclocked static memories. The ptPD2167 has a three-state output and otters a
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uPD2167
384-word
ptPD2167
PD2167
20-pin,
PD2167
PD2167D
2167DS-REV2-7-83-CAT-L
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Untitled
Abstract: No abstract text available
Text: NEC M C -4 1 2 5 6 A 9 2 6 2 ,1 4 4 X 9-B IT DYNAMIC NMOS RAM MODULE NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configurations The MC-41256A9 is a 262,144-word by 9-bit NMOS dynam ic RAM module, designed to operate from a single +5 V power supply. Advanced dynamic circuitry,
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MC-41256A9
144-word
eight/jPD41256
1664B
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P041M-1S
Abstract: pd416 PD4168 AOAE p041m S200N
Text: NEC fiPD4168 8,192 X 8-BIT NMOS XRAM NEC Electronics Inc Revision 1 Description Pin Configuration The NEC^PD4168 is an 8,192 word by 8-bit NMOS XRAM designed to operate from a single +5V power supply. The NEC *<PD4168 is termed an XRAM because it Incor porates some of the best features of both SRAMs Nonmultiplexed addresses, simple interface requirements
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uPD4168
PD4168
mPD4168
PD4168
P041M-1S
pd416
AOAE
p041m
S200N
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difference between intel 8086 and intel 80186 pro
Abstract: D1985 80186 architecture intel 8289 basic operating mode intel 80186 memory map intel 8289 PIN DIAGRAM OF 80186 seven segment ulf MBL80186 80186
Text: FUJITSU MBL 80186 MBL 80186-6 NMOS HIGH-INTEGRATION 16-BIT MICROPROCESSOR February 1986 Edition 1.0 NMOS H IG H -IN T E G R A T IO N 16-BIT MICROPROCESSOR The Fujitsu M B L 8 0 1 8 6 is a highly integrated 16-bit microprocessor. The M B L 8 0 1 8 6 effectively combines 15—2 0
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16-BIT
8OI86
8OI86-6
68-pad
68-pin
High-Spe21
C6B001S
68C-A01)
difference between intel 8086 and intel 80186 pro
D1985
80186 architecture
intel 8289 basic operating mode
intel 80186 memory map
intel 8289
PIN DIAGRAM OF 80186
seven segment ulf
MBL80186
80186
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surface mounted transistor 1BW 17
Abstract: 74VHCT244AFT S390X Hamamatsu Color sensor address MSTAR
Text: TECHNICAL INFORMATION SD-26 Characteristic and use of NMOS linear image sensors Contents 1. Introduction . 4 2. Structure and basic operation . 4
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SD-26
SE-171
KMPD9001E05
surface mounted transistor 1BW 17
74VHCT244AFT
S390X
Hamamatsu Color sensor address
MSTAR
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Untitled
Abstract: No abstract text available
Text: TECHNICAL INFORMATION SD-26 Characteristic and use of NMOS linear image sensors Contents 1. Introduction . 4 2. Structure and basic operation . 4
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SD-26
SE-171
KMPD9001E06
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til 808 segment
Abstract: fujitsu ten ECU DIP-40P intel p 8086-2
Text: FUJITSU MBL 8086 MBL 8086-2 MBL 8086-1 NMOS 16-BIT MICROPROCESSOR F e b ru a ry 1 98 5 E d itio n 4 .0 NMOS 16-BIT MICROPROCESSOR The F u jitsu M B L 8 0 8 6 high perform ance 1 6 -b it CPU is available in th re e c lo c k rates: 5, 8 and 10 M H z. T h e CPU is
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16-BIT
40-LE
DIP-40P-M01)
961MAX
541TYP.
til 808 segment
fujitsu ten ECU
DIP-40P
intel p 8086-2
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8086 microprocessor pin description
Abstract: ta 8268 ah 8086 timing diagram 8259A PRIORITY INTERRUPT CONTROLLER intel p 8086-2 8086 logic diagram 8086 with eprom interfacing ADC with 8086 microprocessor 8288 in maximum mode configuration of 8086 8282/8283 latch used for 8086
Text: FUJITSU MBL 808 6 MBL 8 0 8 6 -2 MBL 8086-1 NMOS 16-BIT MICROPROCESSOR F e b ru a ry 198 5 E d itio n 4 .0 NMOS 16-BIT MICROPROCESSOR The F u jitsu M B L 8 0 8 6 high perform ance 1 6 -b it CPU is available in th re e c lo c k rates: 5, 8 and 10 M H z. T h e CPU is
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16-BIT
8O86-I
MBL8086
40-pin
DIP-40C-A01)
521MAX
40-LE
8086 microprocessor pin description
ta 8268 ah
8086 timing diagram
8259A PRIORITY INTERRUPT CONTROLLER
intel p 8086-2
8086 logic diagram
8086 with eprom
interfacing ADC with 8086 microprocessor
8288 in maximum mode configuration of 8086
8282/8283 latch used for 8086
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. //PD411001 1 ,0 4 8 ,5 7 6 X 1-BIT DYNAMIC NMOS RAM PRELIMINARY INFORMATION Description Pin Configurations The/¿PD411001 is a nibble mode version 1,048,576word by 1-bit dynam ic N-channel MOS random access memory RAM . It is designed to operate from a single
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uPD411001
576word
/nPD411001
3-001659A
//PD411001
HPD411001
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Untitled
Abstract: No abstract text available
Text: W7 S * LU H i W fiPD41256 262,144 X 1-Bit NEC Electronics Inc. Dynamic NMOS RAM Description Pin Configurations The /xPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,
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fiPD41256
/xPD41256
144-word
16-Pin
pPD41256
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PD424256
Abstract: ud41464 uPD41256-12
Text: N E C ELECTRONICS INC 3GE D • t.427525 OOSSltQ 2 ■ NEC MEMORY PRODUCTS Dynamic R A M s Maximum Power Dissipation |mW Accesi Time ns) Cycle Time (ns) Supply Voltage Standby Active Package (Note 1) Pins /JPD41256-10 //PD41256-12 256K x 1 (page) NMOS 100
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uPD41256-10
uPD41256-12
uD41464-10
uPD41464-12
uPD421000-70
uP0421000-80
uPD421000-10
uPD421000-12
uPD42100
256Kx4
PD424256
ud41464
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D41256
Abstract: 41256 ram 41256
Text: Y * ryÆ L W NEC Electronics Inc. PPD41256 262,144 X 1-Bit Dynamic NMOS RAM Description Pin Configurations The iiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,
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uPD41256
144-word
D41256
41256 ram
41256
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interfacing 8259A to the 8086
Abstract: 8085 WORD DOC block diagram 8259A intel 8085 MCS pic 8086 8086 interrupt structure intel 8085 opcode sheet 8085 opcode sheet MBL8259A 8259A-2
Text: .Ili H ï l l l l Uli:1 NMOS PROGRAMMABLE F U J IT S U INTERRUPT CONTROLLER NMOS PROGRAMMABLE INTERRU PT CO NTROLLER The M B L 8 2 5 9 A Program m able In te ru p t C o n tro lle r handles u p t o e ig h t vectored p r io r ity in te rru p ts f o r th e CPU. I t is
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MBL8259A
28-pin
M8L8259A
MCS-80*
MCS-85*
D28005S1C
259A-2
DIP-28P-M02)
3S9I35
58IMAX
interfacing 8259A to the 8086
8085 WORD DOC
block diagram 8259A
intel 8085 MCS
pic 8086
8086 interrupt structure
intel 8085 opcode sheet
8085 opcode sheet
8259A-2
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PD41256
Abstract: JA-11
Text: ¡J PD41256 262,144 X 1-Bit Dynamic NMOS RAM rm W NEC Electronics Inc. Description The jiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel, silicon-gate process for high density, high performance,
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uPD41256
jiPD41256
144-word
JHPD412S6
PD41256
JA-11
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D41256
Abstract: 41256 NEC D41256 apd412 41256P PD41256 RX5A NPD412 D412 JJPD41256
Text: pP D 41256 262,144 X 1-Bit D y n a m ic NMOS RAM F U IC /W NEC E lectron ics Inc. D escription Pin Configurations The jiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,
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uPD41256
144-word
D41256
41256
NEC D41256
apd412
41256P
PD41256
RX5A
NPD412
D412
JJPD41256
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M27512
Abstract: 1N914
Text: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
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M27512
200ns
FDIP28W
M27512
1N914
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210895
Abstract: canon projection aligner
Text: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC IDS043.3 PAGE # 1 de TITRE CCD 2.5, 3.0 um NMOS Buried-Channel Double / Triple-Poly, Double / Triple Metal Process Mitel Design Rules CRÉATEUR Robert Groulx RÉV DATE ACI 1 29-SEP-93 2 21-08-95 N/A
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IDS043
29-SEP-93
12-NOV-96
BR-1475
\0-mitel\doc\ids\IDS043
210895
canon projection aligner
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4164-12
Abstract: NEC 4164 PD4164 4164-10 LPD416
Text: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both
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uPD4164
536-word
M-PD4164
PD4164
fxPD4164
4164-12
NEC 4164
4164-10
LPD416
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PDF
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U7777
Abstract: D41416
Text: SEC jJ>D41416 1 6 ,3 8 4 X 4-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 2 Description Pin Configuration The /j PD41416 is a 16,384-word by 4-bit dynamic Nchannel MOS RAM designed to operate from a single +5 V power supply. The negative voltage substrate bias
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D41416
uPD41416
384-word
nPD41416
jPD41416
if7777777/
83-001785B
U7777
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Untitled
Abstract: No abstract text available
Text: DRV8806 www.ti.com SLVSBA3 – JUNE 2012 QUAD SERIAL INTERFACE LOW-SIDE DRIVER IC Check for Samples: DRV8806 FEATURES 1 • 2 • 4-Channel Protected Low-Side Driver – Four NMOS FETs With Overcurrent Protection – Integrated Inductive Catch Diodes – Serial Interface
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DRV8806
DRV8806
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PDF
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Untitled
Abstract: No abstract text available
Text: DRV8803 www.ti.com SLVSAW5B – JULY 2011 – REVISED FEBRUARY 2012 QUAD LOW-SIDE DRIVER IC Check for Samples: DRV8803 FEATURES 1 • 2 • • 4-Channel Protected Low-Side Driver – Four NMOS FETs With Overcurrent Protection – Integrated Inductive Catch Diodes
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DRV8803
800-mA
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